| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A characterization technique for the degradation characteristics of Ti/Si schottky-barrier diodes and ohmic contacts after thermal silicidation
|
Lou, Yung-Song
|
|
1994
|
37 |
2 |
p. 353-358
6 p.
|
artikel
|
| 2 |
A fast solution of poisson's equation in FETs
|
Kourkoutas, C.D.
|
|
1994
|
37 |
2 |
p. 373-376
4 p.
|
artikel
|
| 3 |
A MODFET process for micrometer scale strained layer islands
|
Hur, K.Y.
|
|
1994
|
37 |
2 |
p. 231-235
5 p.
|
artikel
|
| 4 |
Analysis of bilateral latch up triggering in VLSI circuits
|
Huang, H.S.
|
|
1994
|
37 |
2 |
p. 380-382
3 p.
|
artikel
|
| 5 |
Analytical study of collector-base capacitance and cutoff frequency of n +-p-n-n + bipolar junction transistors
|
Jang, Sheng-Lyang
|
|
1994
|
37 |
2 |
p. 311-318
8 p.
|
artikel
|
| 6 |
Analytical surface potential expression for thin-film double-gate SOI MOSFETs
|
Suzuki, Kunihiro
|
|
1994
|
37 |
2 |
p. 327-332
6 p.
|
artikel
|
| 7 |
Characteristics of a GaAs metal-n +-v-δ (p +)-v-n + switch
|
Guo, Der-Feng
|
|
1994
|
37 |
2 |
p. 223-229
7 p.
|
artikel
|
| 8 |
Collector model describing bipolar transistor distortion at low voltages and high currents
|
Jos, H.F.F.
|
|
1994
|
37 |
2 |
p. 341-352
12 p.
|
artikel
|
| 9 |
Degradation of bipolar junction transistors under dynamic high current stress and biased in open-collector condition
|
Chang, Ping-Chen
|
|
1994
|
37 |
2 |
p. 303-309
7 p.
|
artikel
|
| 10 |
Degradation of npn bipolar junction transistors under dynamic high current stress
|
Jang, Sheng-Lyang
|
|
1994
|
37 |
2 |
p. 295-301
7 p.
|
artikel
|
| 11 |
Electronic density of states in highly tetrahedral amorphous carbon
|
Veerasamy, V.S.
|
|
1994
|
37 |
2 |
p. 319-326
8 p.
|
artikel
|
| 12 |
Highly stable and routinely convergent 2-dimensional hydrodynamic device simulation
|
Lin, Qi
|
|
1994
|
37 |
2 |
p. 359-371
13 p.
|
artikel
|
| 13 |
Influence of channel series resistances on dynamic MOSFET behaviour
|
Smedes, T.
|
|
1994
|
37 |
2 |
p. 251-254
4 p.
|
artikel
|
| 14 |
Modification of the lucky drift theory of impact ionisation for investigation of soft thresholds
|
Wilson, S.P.
|
|
1994
|
37 |
2 |
p. 243-250
8 p.
|
artikel
|
| 15 |
On the reverse bias safe operating area of power bipolar transistors during inductive turn-off
|
Fratelli, L.
|
|
1994
|
37 |
2 |
p. 275-287
13 p.
|
artikel
|
| 16 |
Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors
|
Klingenstein, M.
|
|
1994
|
37 |
2 |
p. 333-340
8 p.
|
artikel
|
| 17 |
Publisher's note
|
|
|
1994
|
37 |
2 |
p. iii-
1 p.
|
artikel
|
| 18 |
Rapid analysis of conductance data in metal-oxide-semiconductor measurements using an approximate method
|
Sands, D.
|
|
1994
|
37 |
2 |
p. 383-385
3 p.
|
artikel
|
| 19 |
Self-consistent simulation of modulation-doped field-effect transistors
|
Wang, Y.H.
|
|
1994
|
37 |
2 |
p. 237-241
5 p.
|
artikel
|
| 20 |
Subthreshold slope of long-channel, accumulation-mode p-channel SOI MOSFETs
|
Colinge, J.P.
|
|
1994
|
37 |
2 |
p. 289-294
6 p.
|
artikel
|
| 21 |
Threshold voltage shift in depletion mode insulated gate field effect transistors
|
Haldar, Subhasis
|
|
1994
|
37 |
2 |
p. 377-379
3 p.
|
artikel
|
| 22 |
Transient analysis of submicron CMOS latchup with a physical criterion
|
Ker, Ming-Dou
|
|
1994
|
37 |
2 |
p. 255-273
19 p.
|
artikel
|
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