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22 results found

no	title	author	magazine	year	volume	issue	page(s)	type
1	A characterization technique for the degradation characteristics of Ti/Si schottky-barrier diodes and ohmic contacts after thermal silicidation	Lou, Yung-Song		1994	37	2	p. 353-358 6 p.	article
2	A fast solution of poisson's equation in FETs	Kourkoutas, C.D.		1994	37	2	p. 373-376 4 p.	article
3	A MODFET process for micrometer scale strained layer islands	Hur, K.Y.		1994	37	2	p. 231-235 5 p.	article
4	Analysis of bilateral latch up triggering in VLSI circuits	Huang, H.S.		1994	37	2	p. 380-382 3 p.	article
5	Analytical study of collector-base capacitance and cutoff frequency of n +-p-n-n + bipolar junction transistors	Jang, Sheng-Lyang		1994	37	2	p. 311-318 8 p.	article
6	Analytical surface potential expression for thin-film double-gate SOI MOSFETs	Suzuki, Kunihiro		1994	37	2	p. 327-332 6 p.	article
7	Characteristics of a GaAs metal-n +-v-δ (p +)-v-n + switch	Guo, Der-Feng		1994	37	2	p. 223-229 7 p.	article
8	Collector model describing bipolar transistor distortion at low voltages and high currents	Jos, H.F.F.		1994	37	2	p. 341-352 12 p.	article
9	Degradation of bipolar junction transistors under dynamic high current stress and biased in open-collector condition	Chang, Ping-Chen		1994	37	2	p. 303-309 7 p.	article
10	Degradation of npn bipolar junction transistors under dynamic high current stress	Jang, Sheng-Lyang		1994	37	2	p. 295-301 7 p.	article
11	Electronic density of states in highly tetrahedral amorphous carbon	Veerasamy, V.S.		1994	37	2	p. 319-326 8 p.	article
12	Highly stable and routinely convergent 2-dimensional hydrodynamic device simulation	Lin, Qi		1994	37	2	p. 359-371 13 p.	article
13	Influence of channel series resistances on dynamic MOSFET behaviour	Smedes, T.		1994	37	2	p. 251-254 4 p.	article
14	Modification of the lucky drift theory of impact ionisation for investigation of soft thresholds	Wilson, S.P.		1994	37	2	p. 243-250 8 p.	article
15	On the reverse bias safe operating area of power bipolar transistors during inductive turn-off	Fratelli, L.		1994	37	2	p. 275-287 13 p.	article
16	Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors	Klingenstein, M.		1994	37	2	p. 333-340 8 p.	article
17	Publisher's note			1994	37	2	p. iii- 1 p.	article
18	Rapid analysis of conductance data in metal-oxide-semiconductor measurements using an approximate method	Sands, D.		1994	37	2	p. 383-385 3 p.	article
19	Self-consistent simulation of modulation-doped field-effect transistors	Wang, Y.H.		1994	37	2	p. 237-241 5 p.	article
20	Subthreshold slope of long-channel, accumulation-mode p-channel SOI MOSFETs	Colinge, J.P.		1994	37	2	p. 289-294 6 p.	article
21	Threshold voltage shift in depletion mode insulated gate field effect transistors	Haldar, Subhasis		1994	37	2	p. 377-379 3 p.	article
22	Transient analysis of submicron CMOS latchup with a physical criterion	Ker, Ming-Dou		1994	37	2	p. 255-273 19 p.	article

22 results found

Koninklijke Bibliotheek - National Library of the Netherlands