| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical model for I-V characteristics of JFETs with heavily doped channels
|
Noor Mohammad, S.
|
|
1990
|
33 |
1 |
p. 53-64
12 p.
|
artikel
|
| 2 |
Analytic approach to the a.c. conductance method for rapid characterization of interface states in MOS structures
|
Yadava, R.D.S.
|
|
1990
|
33 |
1 |
p. 127-137
11 p.
|
artikel
|
| 3 |
An avalanche multiplication model for bipolar transistors
|
Liou, J.J.
|
|
1990
|
33 |
1 |
p. 35-38
4 p.
|
artikel
|
| 4 |
Anomalous acoustoelectric effect in semiconductor layered structures using separated medium configuration
|
Abedin, M.N.
|
|
1990
|
33 |
1 |
p. 65-68
4 p.
|
artikel
|
| 5 |
Carrier transport simulator for silicon based on carrier distribution function evolutions
|
Iizuka, Takahiro
|
|
1990
|
33 |
1 |
p. 27-34
8 p.
|
artikel
|
| 6 |
Charge transport and storage of low programming voltage SONOS/MONOS memory devices
|
Libsch, Frank R.
|
|
1990
|
33 |
1 |
p. 105-126
22 p.
|
artikel
|
| 7 |
Comparison of characteristics of lightly-doped drain MOSFETs
|
Liu, B.D.
|
|
1990
|
33 |
1 |
p. 143-144
2 p.
|
artikel
|
| 8 |
Consequences of spatial distributions of the interface states on the Schottky barrier
|
Lu, G.N.
|
|
1990
|
33 |
1 |
p. 1-9
9 p.
|
artikel
|
| 9 |
Dielectric breakdown wearout limitation of thermally-grown thin-gate oxides
|
Hokari, Yasuaki
|
|
1990
|
33 |
1 |
p. 75-78
4 p.
|
artikel
|
| 10 |
Dynamics of deep level trapping in space charge regions
|
Jonscher, A.K.
|
|
1990
|
33 |
1 |
p. 139-142
4 p.
|
artikel
|
| 11 |
Editorial Board
|
|
|
1990
|
33 |
1 |
p. IFC-
1 p.
|
artikel
|
| 12 |
Editorial — Software survey section
|
|
|
1990
|
33 |
1 |
p. I-III
nvt p.
|
artikel
|
| 13 |
Energy-gap change in silicon n-type inversion layers at low temperature
|
Girisch, R.B.M.
|
|
1990
|
33 |
1 |
p. 85-91
7 p.
|
artikel
|
| 14 |
1 f noise in corbino disk: Anisotropic mobility fluctuations?
|
Orlov, V.B.
|
|
1990
|
33 |
1 |
p. 21-25
5 p.
|
artikel
|
| 15 |
Numerical errors in impurity transport calculations through the boundary of finite-area cells, and a new practical model to reduce such errors
|
Ushio, S.
|
|
1990
|
33 |
1 |
p. 69-73
5 p.
|
artikel
|
| 16 |
On the electrical properties, the interfacial reactivity and the thermal stability of CoSi2/-, TiSi2/-, Co/- and Ti/p-InP Schottky barriers
|
Van den Berghe, L.M.O.
|
|
1990
|
33 |
1 |
p. 79-84
6 p.
|
artikel
|
| 17 |
Operation of MOSFETs in saturation and non-saturation for minimum temperature drift
|
Rizkalla, Maher E.
|
|
1990
|
33 |
1 |
p. 145-146
2 p.
|
artikel
|
| 18 |
Optimization of solar cell performance
|
Pelanchon, F.
|
|
1990
|
33 |
1 |
p. 47-51
5 p.
|
artikel
|
| 19 |
Schottky barrier diode characteristics under high level injection
|
Ng, W.T.
|
|
1990
|
33 |
1 |
p. 39-46
8 p.
|
artikel
|
| 20 |
Self-consistent calculation of electron density in a two-channel modulation-doped structure
|
Patil, M.B.
|
|
1990
|
33 |
1 |
p. 99-104
6 p.
|
artikel
|
| 21 |
Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes
|
Cova, P.
|
|
1990
|
33 |
1 |
p. 11-19
9 p.
|
artikel
|
| 22 |
Voltage periodic structures in the negative differential resistance region of a (Al, Ga)As/GaAs quantum well
|
Richard, P.G.
|
|
1990
|
33 |
1 |
p. 93-97
5 p.
|
artikel
|
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