nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A broad theoretical approach to the investigation of mesoscopic electron devices
|
Ravaioli, U. |
|
1989 |
32 |
12 |
p. 1371-1375 5 p. |
artikel |
2 |
AlAs and InAs mode LO phonon emission assisted tunneling in (InGa)As/(AlIn)As double barrier structures
|
Celeste, A. |
|
1989 |
32 |
12 |
p. 1191-1195 5 p. |
artikel |
3 |
A many-band silicon model for hot-electron transport at high energies
|
Brunetti, Rossella |
|
1989 |
32 |
12 |
p. 1663-1667 5 p. |
artikel |
4 |
Analysis of defect-assisted tunneling based on low frequency noise measurements of resonant tunnel diodes
|
Weichold, M.H. |
|
1989 |
32 |
12 |
p. 1551-1555 5 p. |
artikel |
5 |
A quantum description of drift velocity overshoot at high electric fields in semiconductors
|
Rossi, F. |
|
1989 |
32 |
12 |
p. 1411-1415 5 p. |
artikel |
6 |
Are transverse phonons important for Γ - X-intervalley scattering?
|
Zollner, Stefan |
|
1989 |
32 |
12 |
p. 1585-1589 5 p. |
artikel |
7 |
A self-consistent model of magneto-tunneling
|
Pötz, W. |
|
1989 |
32 |
12 |
p. 1359-1363 5 p. |
artikel |
8 |
A self consistent Monte Carlo method for the transient response of laser excited photoconductors
|
Joshi, R.P. |
|
1989 |
32 |
12 |
p. 1813-1817 5 p. |
artikel |
9 |
A study of resonant tunneling in a 3-terminal ballistic device
|
Bending, S. |
|
1989 |
32 |
12 |
p. 1161-1165 5 p. |
artikel |
10 |
A two-dimensional hot carrier injector for electron waveguide structures
|
Lent, Craig S. |
|
1989 |
32 |
12 |
p. 1137-1141 5 p. |
artikel |
11 |
Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells
|
Cebulla, U. |
|
1989 |
32 |
12 |
p. 1669-1673 5 p. |
artikel |
12 |
Calculations of zener interminiband tunneling rates in superlattices
|
Sibille, A. |
|
1989 |
32 |
12 |
p. 1455-1459 5 p. |
artikel |
13 |
Carrier capture in quantum wells and its importance for ambipolar transport
|
Kuhn, T. |
|
1989 |
32 |
12 |
p. 1851-1855 5 p. |
artikel |
14 |
Carrier cooling in nonpolar semiconductors studied with subpicosecond time-resolution
|
Roskos, H. |
|
1989 |
32 |
12 |
p. 1437-1441 5 p. |
artikel |
15 |
Complex dynamical behavior and chaos in the Hess oscillator
|
Aoki, K. |
|
1989 |
32 |
12 |
p. 1149-1153 5 p. |
artikel |
16 |
Current-controlled hot-electron instability in the four-terminal heterostructure device
|
Kastalsky, A. |
|
1989 |
32 |
12 |
p. 1837-1840 4 p. |
artikel |
17 |
Cyclotron phonon emission and electron energy loss rates in GaAsGaAlAs heterojunctions
|
Leadley, D.R. |
|
1989 |
32 |
12 |
p. 1473-1477 5 p. |
artikel |
18 |
DC and AC analysis of high current double barrier structures
|
Vanbesien, O. |
|
1989 |
32 |
12 |
p. 1533-1537 5 p. |
artikel |
19 |
Design, fabrication and operation of a hot electron resonant tunneling transistor
|
Reddy, U.K. |
|
1989 |
32 |
12 |
p. 1377-1381 5 p. |
artikel |
20 |
Determination of the LO-phonon and Γ→L intervalley scattering time in GaAs from hot electron luminescence spectroscopy
|
Hackenberg, W. |
|
1989 |
32 |
12 |
p. 1247-1251 5 p. |
artikel |
21 |
Direct Monte Carlo simulation of hot-carrier conductivity
|
Reggiani, Lino |
|
1989 |
32 |
12 |
p. 1383-1386 4 p. |
artikel |
22 |
Dynamics of moving space-charge domains in germanium
|
Kahn, A.M. |
|
1989 |
32 |
12 |
p. 1143-1147 5 p. |
artikel |
23 |
Editorial — software survey section
|
|
|
1989 |
32 |
12 |
p. I-III nvt p. |
artikel |
24 |
Effective potential for moment-method simulation of quantum devices
|
Kriman, A.M. |
|
1989 |
32 |
12 |
p. 1603-1607 5 p. |
artikel |
25 |
Effective velocity-field characteristics in submicron GaAs MESFET's including near ballistic transport
|
Yamada, Yoshinori |
|
1989 |
32 |
12 |
p. 1123-1127 5 p. |
artikel |
26 |
Effect of inelastic processes on the self-consistent potential in the resonant-tunneling diode
|
Frensley, William R. |
|
1989 |
32 |
12 |
p. 1235-1239 5 p. |
artikel |
27 |
Effect of the degeneracy on the transport of hot holes in silicon
|
Moatadid, A. |
|
1989 |
32 |
12 |
p. 1895-1899 5 p. |
artikel |
28 |
Effect of valence band anisotropy on the Ultrafast relaxation of photoexcited electrons in GaAs
|
Osman, M.A. |
|
1989 |
32 |
12 |
p. 1911-1914 4 p. |
artikel |
29 |
Electrical and spectroscopic studies of space-charged buildup, energy relaxation and magnetically enhanced bistability in resonant-tunneling structures
|
Eaves, L. |
|
1989 |
32 |
12 |
p. 1101-1108 8 p. |
artikel |
30 |
Electric field effect on weak localization in a semiconductor quantum wire
|
Hu, G.Y. |
|
1989 |
32 |
12 |
p. 1253-1257 5 p. |
artikel |
31 |
Electromagnetic radiation from hot carriers in FET-devices
|
Herzog, M. |
|
1989 |
32 |
12 |
p. 1065-1069 5 p. |
artikel |
32 |
Electromagnetic radiation from hot carriers in FET-devices
|
Herzog, M. |
|
1989 |
32 |
12 |
p. 1765-1769 5 p. |
artikel |
33 |
Electron-beam-induced conductivity at high electric fields in GaAs
|
Panhuber, C. |
|
1989 |
32 |
12 |
p. 1915-1918 4 p. |
artikel |
34 |
Electron diffraction through an aperture in a potential wall
|
Cahay, M. |
|
1989 |
32 |
12 |
p. 1185-1189 5 p. |
artikel |
35 |
Electron-electron scattering effects on high field transport at an AlGaAs/GaAs heterojunction
|
Guerrero, A.H. |
|
1989 |
32 |
12 |
p. 1743-1747 5 p. |
artikel |
36 |
Electron-electron scattering modifications of intervalley transition rates and ultrafast relaxation of hot photoexcited carriers in GaAs
|
Kann, M.J. |
|
1989 |
32 |
12 |
p. 1831-1835 5 p. |
artikel |
37 |
Electron transport in semiconductors under a strong high frequency electric field
|
Cai, W. |
|
1989 |
32 |
12 |
p. 1077-1081 5 p. |
artikel |
38 |
Energy exchange via electron-electron scattering in many-valley semiconductors
|
Rota, L. |
|
1989 |
32 |
12 |
p. 1423-1427 5 p. |
artikel |
39 |
Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells
|
Straw, A. |
|
1989 |
32 |
12 |
p. 1539-1543 5 p. |
artikel |
40 |
Energy relaxation of light holes in InAs.15Sb.85/InSb multiple quantum wells
|
Tigges, C.P. |
|
1989 |
32 |
12 |
p. 1509-1512 4 p. |
artikel |
41 |
Enhancement of energy relaxation rates in semiconductor superlattices
|
Chamberlain, M.P. |
|
1989 |
32 |
12 |
p. 1675-1679 5 p. |
artikel |
42 |
Ensemble Monte Carlo simulation of sub-0.1μm gate length GaAs MESFETs
|
Kuzuhara, Masaaki |
|
1989 |
32 |
12 |
p. 1857-1861 5 p. |
artikel |
43 |
Experimental and theoretical study of scattering mechanisms for 2D excitons in GaAs/AlGaAs quantum wells
|
Hillmer, H. |
|
1989 |
32 |
12 |
p. 1771-1775 5 p. |
artikel |
44 |
Experimental study of hot carriers in small size Si-MOSFETs
|
Toriumi, Akira |
|
1989 |
32 |
12 |
p. 1519-1525 7 p. |
artikel |
45 |
Far-infrared radiation induced photovoltage of inversion electrons on GaAs and Si
|
Thiele, F. |
|
1989 |
32 |
12 |
p. 1503-1507 5 p. |
artikel |
46 |
Fast, alloy-disorder-induced intervalley scattering in AlxGa1-xAs
|
Kalt, H. |
|
1989 |
32 |
12 |
p. 1819-1823 5 p. |
artikel |
47 |
Femtosecond bandedge excitations in modulation-doped quantum wells
|
Knox, Wayne H. |
|
1989 |
32 |
12 |
p. 1057-1063 7 p. |
artikel |
48 |
Femtosecond electron and hole thermalisation in AlGaAs
|
Bradley, C.W.W. |
|
1989 |
32 |
12 |
p. 1173-1177 5 p. |
artikel |
49 |
Femtosecond studies of intervalley scattering in GaAs and AlxGa1-xAs
|
Bailey, D.W. |
|
1989 |
32 |
12 |
p. 1491-1495 5 p. |
artikel |
50 |
From hot electron transport theory to macroscopic nonlinear and chaotic behavior induced by impact ionization in semiconductors
|
Schöll, E. |
|
1989 |
32 |
12 |
p. 1129-1135 7 p. |
artikel |
51 |
Full dynamic screening calculation of hot electron scattering rates in multicomponent semiconductor plasmas
|
Young, Jeff F. |
|
1989 |
32 |
12 |
p. 1567-1571 5 p. |
artikel |
52 |
Geometric effects of scattering in microstructures
|
Kriman, A.M. |
|
1989 |
32 |
12 |
p. 1597-1601 5 p. |
artikel |
53 |
Global bifurcation and hysteresis of self-generated oscillations in a microscopic model of nonlinear transport in p-Ge
|
Hüpper, G. |
|
1989 |
32 |
12 |
p. 1787-1791 5 p. |
artikel |
54 |
High-field mobility of light holes in strained InGaAs quantum wells
|
Hjalmarson, Harold P. |
|
1989 |
32 |
12 |
p. 1777-1780 4 p. |
artikel |
55 |
High-field transport with hot phonons in degenerate semiconductors
|
Gupta, Rita |
|
1989 |
32 |
12 |
p. 1241-1245 5 p. |
artikel |
56 |
Hot-carrier dynamics in Ge on single picosecond timescales: Comparing Raman and reflectivity experiments with a self-consistent kinetic model
|
Othonos, A. |
|
1989 |
32 |
12 |
p. 1573-1577 5 p. |
artikel |
57 |
Hot carrier magnetophonon spectroscopy of semiconductors in high magnetic fields up to 40 T
|
Yamada, Koji |
|
1989 |
32 |
12 |
p. 1113-1117 5 p. |
artikel |
58 |
Hot carrier relaxation in InP and GaAs on a subpicosecond time scale
|
Zhou, X.Q. |
|
1989 |
32 |
12 |
p. 1591-1595 5 p. |
artikel |
59 |
Hot carrier thermalization in GaAs/AlAs superlattices
|
Leo, K. |
|
1989 |
32 |
12 |
p. 1863-1867 5 p. |
artikel |
60 |
Hot electron electroluminescence in AlGaAs/GaAs heterostructures
|
Petersen, C.L. |
|
1989 |
32 |
12 |
p. 1919-1923 5 p. |
artikel |
61 |
Hot electron energy relaxation via acoustic phonon emission in GaAs/Al0.24Ga0.76As single and multiple quantum wells
|
Daniels, M.E. |
|
1989 |
32 |
12 |
p. 1207-1212 6 p. |
artikel |
62 |
Hot electron injection in millimetre wave Gunn diodes
|
Couch, N.R. |
|
1989 |
32 |
12 |
p. 1685-1688 4 p. |
artikel |
63 |
Hot-electron magnetophonon resonances in doped and undoped GaAs/(Ga,Al)As quantum wells studied using photoluminescence
|
Reinen, H.A.J.M. |
|
1989 |
32 |
12 |
p. 1315-1319 5 p. |
artikel |
64 |
Hot electrons and traps in a-SiO2
|
Kamocsai, R.L. |
|
1989 |
32 |
12 |
p. 1825-1829 5 p. |
artikel |
65 |
Hot electron transport in high-lying minibands in semiconductor superlattices
|
England, P. |
|
1989 |
32 |
12 |
p. 1213-1217 5 p. |
artikel |
66 |
Hot exciton effects and relaxation in coupled quantum wells
|
Clérot, F. |
|
1989 |
32 |
12 |
p. 1201-1205 5 p. |
artikel |
67 |
Hot phonon-hot electron coupled Boltzmann equations
|
Fadel, M. |
|
1989 |
32 |
12 |
p. 1229-1233 5 p. |
artikel |
68 |
Hot phonons and instabilities in GaAs/GaAlAs structures
|
Balkan, N. |
|
1989 |
32 |
12 |
p. 1641-1646 6 p. |
artikel |
69 |
Hot phonons in quantum wells systems
|
Lugli, P. |
|
1989 |
32 |
12 |
p. 1881-1885 5 p. |
artikel |
70 |
Hydrodynamic hot-electron transport simulation based on the Monte Carlo method
|
Woolard, D.L. |
|
1989 |
32 |
12 |
p. 1347-1351 5 p. |
artikel |
71 |
Imaging of spatio-temporal structures in semiconductors
|
Rau, U. |
|
1989 |
32 |
12 |
p. 1365-1369 5 p. |
artikel |
72 |
Impact ionization breakdown in p-germanium samples with very short contact distances
|
Clauss, W. |
|
1989 |
32 |
12 |
p. 1197-1200 4 p. |
artikel |
73 |
Imperfections and resonant tunneling in quantum-well heterostructures
|
Pötz, W. |
|
1989 |
32 |
12 |
p. 1353-1357 5 p. |
artikel |
74 |
Impurity scattering in quantum transport simulation
|
Menziani, P. |
|
1989 |
32 |
12 |
p. 1807-1811 5 p. |
artikel |
75 |
Inelastic hot-electron Bloch scattering from quantum-confined systems
|
Iafrate, G.J. |
|
1989 |
32 |
12 |
p. 1119-1121 3 p. |
artikel |
76 |
Inelastic scattering effects on carrier relaxation in quantum well-based hot electron structures
|
Jalabert, R. |
|
1989 |
32 |
12 |
p. 1259-1263 5 p. |
artikel |
77 |
Interface state generation mechanism in n-MOSFET's
|
Yasuda, N. |
|
1989 |
32 |
12 |
p. 1579-1583 5 p. |
artikel |
78 |
Intersubband dynamics in modulation doped quantum wells
|
Educato, J.L. |
|
1989 |
32 |
12 |
p. 1615-1619 5 p. |
artikel |
79 |
Intersubband emission from vertically excited hot electrons in superlattices
|
Helm, M. |
|
1989 |
32 |
12 |
p. 1761-1764 4 p. |
artikel |
80 |
Intersubband relaxation of hot carriers in coupled quantum wells
|
Lary, Jenifer |
|
1989 |
32 |
12 |
p. 1283-1287 5 p. |
artikel |
81 |
Intraband transitions of hot electrons studied by picosecond infrared pulses — a novel probe of hot phonons in polar semiconductors
|
Elsaesser, T. |
|
1989 |
32 |
12 |
p. 1701-1705 5 p. |
artikel |
82 |
Inverted bistability in the current-voltage characteristics of a resonant tunneling device
|
Leadbeater, M.L. |
|
1989 |
32 |
12 |
p. 1467-1471 5 p. |
artikel |
83 |
Large peak-to-valley current ratios in triple barrier heterostructures
|
Collins, D.A. |
|
1989 |
32 |
12 |
p. 1095-1099 5 p. |
artikel |
84 |
Lateral space-charge effects on ballistic electron transport across graded heterojunctions
|
Weinzierl, S. |
|
1989 |
32 |
12 |
p. 1557-1561 5 p. |
artikel |
85 |
Length dependent hot electron noise in doped GaAs
|
Bareikis, V. |
|
1989 |
32 |
12 |
p. 1647-1650 4 p. |
artikel |
86 |
Modulation of impurity scattering rates by wavefunction engineering in quasi 2-d systems and its device applications
|
Bhobe, S. |
|
1989 |
32 |
12 |
p. 1651-1655 5 p. |
artikel |
87 |
Modulation of impurity scattering rates by wavefunction engineering in quasi 2-D systems and its device applications
|
Bhobe, S. |
|
1989 |
32 |
12 |
p. 1083-1087 5 p. |
artikel |
88 |
Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures
|
Goodnick, Stephen M. |
|
1989 |
32 |
12 |
p. 1737-1741 5 p. |
artikel |
89 |
Monte Carlo simulation of hot-carrier transport in real semiconductor devices
|
Fischetti, M.V. |
|
1989 |
32 |
12 |
p. 1723-1729 7 p. |
artikel |
90 |
Monte Carlo simulation of hot electrons in InAlAs/InGaAs heterojunctions
|
Kobayashi, E. |
|
1989 |
32 |
12 |
p. 1845-1849 5 p. |
artikel |
91 |
Multivalued hot electron distributions as spontaneous symmetry breaking
|
Asche, M. |
|
1989 |
32 |
12 |
p. 1633-1639 7 p. |
artikel |
92 |
Negative differential perpendicular velocity in GaAs/AlAs superlattices
|
Sibille, A. |
|
1989 |
32 |
12 |
p. 1461-1465 5 p. |
artikel |
93 |
New features of real-space hot-electron transfer in the NERFET
|
Kastalsky, A. |
|
1989 |
32 |
12 |
p. 1841-1844 4 p. |
artikel |
94 |
New lattice gas method for semiconductor transport simulations
|
Rieger, M. |
|
1989 |
32 |
12 |
p. 1399-1403 5 p. |
artikel |
95 |
Nonequilibrium carrier noise and its effects in microstructures
|
Gurevich, V.L. |
|
1989 |
32 |
12 |
p. 1749-1753 5 p. |
artikel |
96 |
Non-equilibrium effects on quasi-one-dimensional weak and strong localizations
|
Ikoma, Toshiaki |
|
1989 |
32 |
12 |
p. 1793-1799 7 p. |
artikel |
97 |
Nonequilibrium electron dynamics in bipolar transistors
|
Levi, A.F.J. |
|
1989 |
32 |
12 |
p. 1289-1295 7 p. |
artikel |
98 |
Nonequilibrium green function techniques applied to hot electron quantum transport
|
Jauho, Antti-Pekka |
|
1989 |
32 |
12 |
p. 1265-1271 7 p. |
artikel |
99 |
Non-linearity and intersubband population inversion in quantum wire structures
|
Briggs, S. |
|
1989 |
32 |
12 |
p. 1657-1661 5 p. |
artikel |
100 |
Nonthermalized energy distributions in systems with extremely short carrier lifetimes
|
Höpfel, Ralph A. |
|
1989 |
32 |
12 |
p. 1781-1786 6 p. |
artikel |
101 |
Optical analysis of real space hot electron distributions in heterolayers
|
Inoue, M. |
|
1989 |
32 |
12 |
p. 1801-1805 5 p. |
artikel |
102 |
Overshoot saturation in ultra-submicron FETs due to minimum acceleration lengths
|
Ryan, J.M. |
|
1989 |
32 |
12 |
p. 1609-1613 5 p. |
artikel |
103 |
Phonon-assisted tunnelling of photoexcited carriers from InGaAs quantum wells in applied electric fields
|
Shorthose, M.G. |
|
1989 |
32 |
12 |
p. 1449-1453 5 p. |
artikel |
104 |
Phonon emission by a hot two dimensional electron gas at the gallium arsenide/aluminium gallium arsenide interface
|
Hawker, P. |
|
1989 |
32 |
12 |
p. 1755-1759 5 p. |
artikel |
105 |
Photoemission of metal-semiconductor structures: Novel spectroscopy for high field transport
|
Peretti, J. |
|
1989 |
32 |
12 |
p. 1681-1684 4 p. |
artikel |
106 |
Photoexcited hot carriers: From cw to 6 fs in 20 years
|
Shah, Jagdeep |
|
1989 |
32 |
12 |
p. 1051-1056 6 p. |
artikel |
107 |
Photoinjected carrier's acoustic plasma oscillations
|
Esperidião, A.S. |
|
1989 |
32 |
12 |
p. 1225-1227 3 p. |
artikel |
108 |
Picosecond optical studies of 2D electron - 2D phonon dynamics
|
Ryan, J.F. |
|
1989 |
32 |
12 |
p. 1429-1435 7 p. |
artikel |
109 |
Picosecond photoluminescence measurements of hot carrier relaxation and auger recombination in GaSb
|
Snow, P.A. |
|
1989 |
32 |
12 |
p. 1485-1489 5 p. |
artikel |
110 |
Plasma instabilities in quasi two-dimensional electron gases
|
Stark, J.B. |
|
1989 |
32 |
12 |
p. 1327-1330 4 p. |
artikel |
111 |
Polar optical phonon scattering of charge carriers in alloy semiconductors: Effects of phonon localization
|
Register, L.F. |
|
1989 |
32 |
12 |
p. 1387-1391 5 p. |
artikel |
112 |
Position broadening effect in hot-electron transport
|
Bertoncini, R. |
|
1989 |
32 |
12 |
p. 1167-1171 5 p. |
artikel |
113 |
Quantitative measurements of intervalley and carrier-carrier scattering in GaAs with hot (e,A0) luminescence
|
Kash, J.A. |
|
1989 |
32 |
12 |
p. 1277-1281 5 p. |
artikel |
114 |
Quantum interference and space charge effects in double barrier structures incorporating wide quantum wells
|
Alves, E.S. |
|
1989 |
32 |
12 |
p. 1627-1631 5 p. |
artikel |
115 |
Quantum moment balance equations and resonant tunnelling structures
|
Grubin, H.L. |
|
1989 |
32 |
12 |
p. 1071-1075 5 p. |
artikel |
116 |
Real space transfer rates for polar optical phonon scattering from asymmetric quantum wells
|
Lent, Craig |
|
1989 |
32 |
12 |
p. 1479-1483 5 p. |
artikel |
117 |
Relaxation of hot carriers in undoped and n-doped Ga0.47In0.53As generated by subpicosecond pulses
|
Rieck, B. |
|
1989 |
32 |
12 |
p. 1405-1409 5 p. |
artikel |
118 |
Resonant tunneling in crossed electric and magnetic fields: A tool for investigating extreme hot electron effects
|
England, P. |
|
1989 |
32 |
12 |
p. 1219-1223 5 p. |
artikel |
119 |
Resonant tunneling through magnetic edge states
|
Peeters, F.M. |
|
1989 |
32 |
12 |
p. 1309-1313 5 p. |
artikel |
120 |
Role of structure sizes in determining the characteristics of the resonant tunneling diode
|
Kluksdahl, N.C. |
|
1989 |
32 |
12 |
p. 1273-1276 4 p. |
artikel |
121 |
Screening of the n=2 excitonic resonance by hot carriers in an undoped Ga 0.47 In 0.53 As/Al 0.48 In 0.52 As multiple quantum well structure
|
Lobentanzer, H. |
|
1989 |
32 |
12 |
p. 1875-1879 5 p. |
artikel |
122 |
Series addition of ballistic resistors
|
Main, P.C. |
|
1989 |
32 |
12 |
p. 1303-1307 5 p. |
artikel |
123 |
Simulation of ultrafast relaxation of photoexcited electrons via analytical distribution functions
|
Zheng, T.F. |
|
1989 |
32 |
12 |
p. 1089-1093 5 p. |
artikel |
124 |
Space charge currents, domains and instabilities viewed with voltage contrast spectroscopy
|
Maracas, G.N. |
|
1989 |
32 |
12 |
p. 1887-1893 7 p. |
artikel |
125 |
Space-charge effects and ac response of resonant tunneling double-barrier diodes
|
Sheard, F.W. |
|
1989 |
32 |
12 |
p. 1443-1447 5 p. |
artikel |
126 |
Space-charge striations
|
Ridley, B.K. |
|
1989 |
32 |
12 |
p. 1393-1397 5 p. |
artikel |
127 |
Splitting and shift of hot magnetophonon resonance peaks in a two-dimensional electron gas
|
Warmenbol, P. |
|
1989 |
32 |
12 |
p. 1545-1549 5 p. |
artikel |
128 |
Spontaneous oscillations and chaos in silicon induced by excitonic impact ionization
|
Weman, H. |
|
1989 |
32 |
12 |
p. 1563-1566 4 p. |
artikel |
129 |
The current density in a double-barrier heterostructure subjected to a transverse magnetic field. The importance of the Ky
|
Cury, L.A. |
|
1989 |
32 |
12 |
p. 1689-1693 5 p. |
artikel |
130 |
The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)As
|
Foster, T.J. |
|
1989 |
32 |
12 |
p. 1731-1735 5 p. |
artikel |
131 |
The intervalley X6→Γ6, L6 scattering time in GaAs measured by ultrafast pump-probe infrared absorption spectroscopy
|
Wang, W.B. |
|
1989 |
32 |
12 |
p. 1337-1345 9 p. |
artikel |
132 |
The one dimensional quantised ballistic resistance in GaAs/AlGaAs heterojunctions with varying experimental conditions
|
Brown, RJ |
|
1989 |
32 |
12 |
p. 1179-1183 5 p. |
artikel |
133 |
Theory of ballistic electron transport through quantized constrictions
|
He, Song |
|
1989 |
32 |
12 |
p. 1695-1699 5 p. |
artikel |
134 |
Theory of non-linear transport in quantum waveguides
|
Barker, J.R. |
|
1989 |
32 |
12 |
p. 1155-1159 5 p. |
artikel |
135 |
Time-domain finite difference and EMC study of hot carrier transport in GaAs on a picosecond scale
|
Lu, Y. |
|
1989 |
32 |
12 |
p. 1297-1301 5 p. |
artikel |
136 |
Time-of-flight experiments on 2D electron gases
|
Zwaal, E.A.E. |
|
1989 |
32 |
12 |
p. 1109-1112 4 p. |
artikel |
137 |
Time resolved inter-subband relaxation in GaAs/GaAlAs multiple quantum wells
|
Levenson, J.A. |
|
1989 |
32 |
12 |
p. 1869-1873 5 p. |
artikel |
138 |
Time-resolved raman scattering measurement of electron-optical phonon intersubband relaxation in GaAs quantum wells
|
Tatham, M.C. |
|
1989 |
32 |
12 |
p. 1497-1501 5 p. |
artikel |
139 |
Transient analysis of resonant tunneling hot electron transistor (RHET)
|
Ohnishi, H. |
|
1989 |
32 |
12 |
p. 1905-1909 5 p. |
artikel |
140 |
Transient intersubband absorption spectra of hot electrons in a modulation-doped multiple-quantum-well structure
|
Elsaesser, T. |
|
1989 |
32 |
12 |
p. 1707-1711 5 p. |
artikel |
141 |
Transport of the photoexcited electron-hole plasma in InP
|
Tsen, K.T. |
|
1989 |
32 |
12 |
p. 1331-1335 5 p. |
artikel |
142 |
Transverse diffusion coefficient and carrier density fluctuation derived from the fluctuation of the state occupancy function in semiconductors
|
Nougier, J.P. |
|
1989 |
32 |
12 |
p. 1901-1904 4 p. |
artikel |
143 |
Tunable cyclotron resonance laser based on hot holes in germanium applied to FIR spectroscopy of GaAs/AlGaAs heterostructures
|
Unterrainer, K. |
|
1989 |
32 |
12 |
p. 1527-1531 5 p. |
artikel |
144 |
Tunneling and energy relaxation of hot electrons in double quantum well structures
|
Sawaki, N. |
|
1989 |
32 |
12 |
p. 1321-1325 5 p. |
artikel |
145 |
Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As
|
Alexander, M.G.W. |
|
1989 |
32 |
12 |
p. 1621-1625 5 p. |
artikel |
146 |
Two-dimensional simulation of sub-μm GaAs MESFETs with ion-implanted doping
|
Feng, Y.K. |
|
1989 |
32 |
12 |
p. 1719-1722 4 p. |
artikel |
147 |
Weighted ensemble Monte Carlo
|
Rota, L. |
|
1989 |
32 |
12 |
p. 1417-1421 5 p. |
artikel |
148 |
X-point tunneling in AlAs/GaAs double barrier heterostructures
|
Ting, D.Z.-Y. |
|
1989 |
32 |
12 |
p. 1513-1517 5 p. |
artikel |
149 |
Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices
|
Feldmann, J. |
|
1989 |
32 |
12 |
p. 1713-1717 5 p. |
artikel |