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                             149 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A broad theoretical approach to the investigation of mesoscopic electron devices Ravaioli, U.
1989
32 12 p. 1371-1375
5 p.
artikel
2 AlAs and InAs mode LO phonon emission assisted tunneling in (InGa)As/(AlIn)As double barrier structures Celeste, A.
1989
32 12 p. 1191-1195
5 p.
artikel
3 A many-band silicon model for hot-electron transport at high energies Brunetti, Rossella
1989
32 12 p. 1663-1667
5 p.
artikel
4 Analysis of defect-assisted tunneling based on low frequency noise measurements of resonant tunnel diodes Weichold, M.H.
1989
32 12 p. 1551-1555
5 p.
artikel
5 A quantum description of drift velocity overshoot at high electric fields in semiconductors Rossi, F.
1989
32 12 p. 1411-1415
5 p.
artikel
6 Are transverse phonons important for Γ - X-intervalley scattering? Zollner, Stefan
1989
32 12 p. 1585-1589
5 p.
artikel
7 A self-consistent model of magneto-tunneling Pötz, W.
1989
32 12 p. 1359-1363
5 p.
artikel
8 A self consistent Monte Carlo method for the transient response of laser excited photoconductors Joshi, R.P.
1989
32 12 p. 1813-1817
5 p.
artikel
9 A study of resonant tunneling in a 3-terminal ballistic device Bending, S.
1989
32 12 p. 1161-1165
5 p.
artikel
10 A two-dimensional hot carrier injector for electron waveguide structures Lent, Craig S.
1989
32 12 p. 1137-1141
5 p.
artikel
11 Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells Cebulla, U.
1989
32 12 p. 1669-1673
5 p.
artikel
12 Calculations of zener interminiband tunneling rates in superlattices Sibille, A.
1989
32 12 p. 1455-1459
5 p.
artikel
13 Carrier capture in quantum wells and its importance for ambipolar transport Kuhn, T.
1989
32 12 p. 1851-1855
5 p.
artikel
14 Carrier cooling in nonpolar semiconductors studied with subpicosecond time-resolution Roskos, H.
1989
32 12 p. 1437-1441
5 p.
artikel
15 Complex dynamical behavior and chaos in the Hess oscillator Aoki, K.
1989
32 12 p. 1149-1153
5 p.
artikel
16 Current-controlled hot-electron instability in the four-terminal heterostructure device Kastalsky, A.
1989
32 12 p. 1837-1840
4 p.
artikel
17 Cyclotron phonon emission and electron energy loss rates in GaAsGaAlAs heterojunctions Leadley, D.R.
1989
32 12 p. 1473-1477
5 p.
artikel
18 DC and AC analysis of high current double barrier structures Vanbesien, O.
1989
32 12 p. 1533-1537
5 p.
artikel
19 Design, fabrication and operation of a hot electron resonant tunneling transistor Reddy, U.K.
1989
32 12 p. 1377-1381
5 p.
artikel
20 Determination of the LO-phonon and Γ→L intervalley scattering time in GaAs from hot electron luminescence spectroscopy Hackenberg, W.
1989
32 12 p. 1247-1251
5 p.
artikel
21 Direct Monte Carlo simulation of hot-carrier conductivity Reggiani, Lino
1989
32 12 p. 1383-1386
4 p.
artikel
22 Dynamics of moving space-charge domains in germanium Kahn, A.M.
1989
32 12 p. 1143-1147
5 p.
artikel
23 Editorial — software survey section 1989
32 12 p. I-III
nvt p.
artikel
24 Effective potential for moment-method simulation of quantum devices Kriman, A.M.
1989
32 12 p. 1603-1607
5 p.
artikel
25 Effective velocity-field characteristics in submicron GaAs MESFET's including near ballistic transport Yamada, Yoshinori
1989
32 12 p. 1123-1127
5 p.
artikel
26 Effect of inelastic processes on the self-consistent potential in the resonant-tunneling diode Frensley, William R.
1989
32 12 p. 1235-1239
5 p.
artikel
27 Effect of the degeneracy on the transport of hot holes in silicon Moatadid, A.
1989
32 12 p. 1895-1899
5 p.
artikel
28 Effect of valence band anisotropy on the Ultrafast relaxation of photoexcited electrons in GaAs Osman, M.A.
1989
32 12 p. 1911-1914
4 p.
artikel
29 Electrical and spectroscopic studies of space-charged buildup, energy relaxation and magnetically enhanced bistability in resonant-tunneling structures Eaves, L.
1989
32 12 p. 1101-1108
8 p.
artikel
30 Electric field effect on weak localization in a semiconductor quantum wire Hu, G.Y.
1989
32 12 p. 1253-1257
5 p.
artikel
31 Electromagnetic radiation from hot carriers in FET-devices Herzog, M.
1989
32 12 p. 1065-1069
5 p.
artikel
32 Electromagnetic radiation from hot carriers in FET-devices Herzog, M.
1989
32 12 p. 1765-1769
5 p.
artikel
33 Electron-beam-induced conductivity at high electric fields in GaAs Panhuber, C.
1989
32 12 p. 1915-1918
4 p.
artikel
34 Electron diffraction through an aperture in a potential wall Cahay, M.
1989
32 12 p. 1185-1189
5 p.
artikel
35 Electron-electron scattering effects on high field transport at an AlGaAs/GaAs heterojunction Guerrero, A.H.
1989
32 12 p. 1743-1747
5 p.
artikel
36 Electron-electron scattering modifications of intervalley transition rates and ultrafast relaxation of hot photoexcited carriers in GaAs Kann, M.J.
1989
32 12 p. 1831-1835
5 p.
artikel
37 Electron transport in semiconductors under a strong high frequency electric field Cai, W.
1989
32 12 p. 1077-1081
5 p.
artikel
38 Energy exchange via electron-electron scattering in many-valley semiconductors Rota, L.
1989
32 12 p. 1423-1427
5 p.
artikel
39 Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells Straw, A.
1989
32 12 p. 1539-1543
5 p.
artikel
40 Energy relaxation of light holes in InAs.15Sb.85/InSb multiple quantum wells Tigges, C.P.
1989
32 12 p. 1509-1512
4 p.
artikel
41 Enhancement of energy relaxation rates in semiconductor superlattices Chamberlain, M.P.
1989
32 12 p. 1675-1679
5 p.
artikel
42 Ensemble Monte Carlo simulation of sub-0.1μm gate length GaAs MESFETs Kuzuhara, Masaaki
1989
32 12 p. 1857-1861
5 p.
artikel
43 Experimental and theoretical study of scattering mechanisms for 2D excitons in GaAs/AlGaAs quantum wells Hillmer, H.
1989
32 12 p. 1771-1775
5 p.
artikel
44 Experimental study of hot carriers in small size Si-MOSFETs Toriumi, Akira
1989
32 12 p. 1519-1525
7 p.
artikel
45 Far-infrared radiation induced photovoltage of inversion electrons on GaAs and Si Thiele, F.
1989
32 12 p. 1503-1507
5 p.
artikel
46 Fast, alloy-disorder-induced intervalley scattering in AlxGa1-xAs Kalt, H.
1989
32 12 p. 1819-1823
5 p.
artikel
47 Femtosecond bandedge excitations in modulation-doped quantum wells Knox, Wayne H.
1989
32 12 p. 1057-1063
7 p.
artikel
48 Femtosecond electron and hole thermalisation in AlGaAs Bradley, C.W.W.
1989
32 12 p. 1173-1177
5 p.
artikel
49 Femtosecond studies of intervalley scattering in GaAs and AlxGa1-xAs Bailey, D.W.
1989
32 12 p. 1491-1495
5 p.
artikel
50 From hot electron transport theory to macroscopic nonlinear and chaotic behavior induced by impact ionization in semiconductors Schöll, E.
1989
32 12 p. 1129-1135
7 p.
artikel
51 Full dynamic screening calculation of hot electron scattering rates in multicomponent semiconductor plasmas Young, Jeff F.
1989
32 12 p. 1567-1571
5 p.
artikel
52 Geometric effects of scattering in microstructures Kriman, A.M.
1989
32 12 p. 1597-1601
5 p.
artikel
53 Global bifurcation and hysteresis of self-generated oscillations in a microscopic model of nonlinear transport in p-Ge Hüpper, G.
1989
32 12 p. 1787-1791
5 p.
artikel
54 High-field mobility of light holes in strained InGaAs quantum wells Hjalmarson, Harold P.
1989
32 12 p. 1777-1780
4 p.
artikel
55 High-field transport with hot phonons in degenerate semiconductors Gupta, Rita
1989
32 12 p. 1241-1245
5 p.
artikel
56 Hot-carrier dynamics in Ge on single picosecond timescales: Comparing Raman and reflectivity experiments with a self-consistent kinetic model Othonos, A.
1989
32 12 p. 1573-1577
5 p.
artikel
57 Hot carrier magnetophonon spectroscopy of semiconductors in high magnetic fields up to 40 T Yamada, Koji
1989
32 12 p. 1113-1117
5 p.
artikel
58 Hot carrier relaxation in InP and GaAs on a subpicosecond time scale Zhou, X.Q.
1989
32 12 p. 1591-1595
5 p.
artikel
59 Hot carrier thermalization in GaAs/AlAs superlattices Leo, K.
1989
32 12 p. 1863-1867
5 p.
artikel
60 Hot electron electroluminescence in AlGaAs/GaAs heterostructures Petersen, C.L.
1989
32 12 p. 1919-1923
5 p.
artikel
61 Hot electron energy relaxation via acoustic phonon emission in GaAs/Al0.24Ga0.76As single and multiple quantum wells Daniels, M.E.
1989
32 12 p. 1207-1212
6 p.
artikel
62 Hot electron injection in millimetre wave Gunn diodes Couch, N.R.
1989
32 12 p. 1685-1688
4 p.
artikel
63 Hot-electron magnetophonon resonances in doped and undoped GaAs/(Ga,Al)As quantum wells studied using photoluminescence Reinen, H.A.J.M.
1989
32 12 p. 1315-1319
5 p.
artikel
64 Hot electrons and traps in a-SiO2 Kamocsai, R.L.
1989
32 12 p. 1825-1829
5 p.
artikel
65 Hot electron transport in high-lying minibands in semiconductor superlattices England, P.
1989
32 12 p. 1213-1217
5 p.
artikel
66 Hot exciton effects and relaxation in coupled quantum wells Clérot, F.
1989
32 12 p. 1201-1205
5 p.
artikel
67 Hot phonon-hot electron coupled Boltzmann equations Fadel, M.
1989
32 12 p. 1229-1233
5 p.
artikel
68 Hot phonons and instabilities in GaAs/GaAlAs structures Balkan, N.
1989
32 12 p. 1641-1646
6 p.
artikel
69 Hot phonons in quantum wells systems Lugli, P.
1989
32 12 p. 1881-1885
5 p.
artikel
70 Hydrodynamic hot-electron transport simulation based on the Monte Carlo method Woolard, D.L.
1989
32 12 p. 1347-1351
5 p.
artikel
71 Imaging of spatio-temporal structures in semiconductors Rau, U.
1989
32 12 p. 1365-1369
5 p.
artikel
72 Impact ionization breakdown in p-germanium samples with very short contact distances Clauss, W.
1989
32 12 p. 1197-1200
4 p.
artikel
73 Imperfections and resonant tunneling in quantum-well heterostructures Pötz, W.
1989
32 12 p. 1353-1357
5 p.
artikel
74 Impurity scattering in quantum transport simulation Menziani, P.
1989
32 12 p. 1807-1811
5 p.
artikel
75 Inelastic hot-electron Bloch scattering from quantum-confined systems Iafrate, G.J.
1989
32 12 p. 1119-1121
3 p.
artikel
76 Inelastic scattering effects on carrier relaxation in quantum well-based hot electron structures Jalabert, R.
1989
32 12 p. 1259-1263
5 p.
artikel
77 Interface state generation mechanism in n-MOSFET's Yasuda, N.
1989
32 12 p. 1579-1583
5 p.
artikel
78 Intersubband dynamics in modulation doped quantum wells Educato, J.L.
1989
32 12 p. 1615-1619
5 p.
artikel
79 Intersubband emission from vertically excited hot electrons in superlattices Helm, M.
1989
32 12 p. 1761-1764
4 p.
artikel
80 Intersubband relaxation of hot carriers in coupled quantum wells Lary, Jenifer
1989
32 12 p. 1283-1287
5 p.
artikel
81 Intraband transitions of hot electrons studied by picosecond infrared pulses — a novel probe of hot phonons in polar semiconductors Elsaesser, T.
1989
32 12 p. 1701-1705
5 p.
artikel
82 Inverted bistability in the current-voltage characteristics of a resonant tunneling device Leadbeater, M.L.
1989
32 12 p. 1467-1471
5 p.
artikel
83 Large peak-to-valley current ratios in triple barrier heterostructures Collins, D.A.
1989
32 12 p. 1095-1099
5 p.
artikel
84 Lateral space-charge effects on ballistic electron transport across graded heterojunctions Weinzierl, S.
1989
32 12 p. 1557-1561
5 p.
artikel
85 Length dependent hot electron noise in doped GaAs Bareikis, V.
1989
32 12 p. 1647-1650
4 p.
artikel
86 Modulation of impurity scattering rates by wavefunction engineering in quasi 2-d systems and its device applications Bhobe, S.
1989
32 12 p. 1651-1655
5 p.
artikel
87 Modulation of impurity scattering rates by wavefunction engineering in quasi 2-D systems and its device applications Bhobe, S.
1989
32 12 p. 1083-1087
5 p.
artikel
88 Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures Goodnick, Stephen M.
1989
32 12 p. 1737-1741
5 p.
artikel
89 Monte Carlo simulation of hot-carrier transport in real semiconductor devices Fischetti, M.V.
1989
32 12 p. 1723-1729
7 p.
artikel
90 Monte Carlo simulation of hot electrons in InAlAs/InGaAs heterojunctions Kobayashi, E.
1989
32 12 p. 1845-1849
5 p.
artikel
91 Multivalued hot electron distributions as spontaneous symmetry breaking Asche, M.
1989
32 12 p. 1633-1639
7 p.
artikel
92 Negative differential perpendicular velocity in GaAs/AlAs superlattices Sibille, A.
1989
32 12 p. 1461-1465
5 p.
artikel
93 New features of real-space hot-electron transfer in the NERFET Kastalsky, A.
1989
32 12 p. 1841-1844
4 p.
artikel
94 New lattice gas method for semiconductor transport simulations Rieger, M.
1989
32 12 p. 1399-1403
5 p.
artikel
95 Nonequilibrium carrier noise and its effects in microstructures Gurevich, V.L.
1989
32 12 p. 1749-1753
5 p.
artikel
96 Non-equilibrium effects on quasi-one-dimensional weak and strong localizations Ikoma, Toshiaki
1989
32 12 p. 1793-1799
7 p.
artikel
97 Nonequilibrium electron dynamics in bipolar transistors Levi, A.F.J.
1989
32 12 p. 1289-1295
7 p.
artikel
98 Nonequilibrium green function techniques applied to hot electron quantum transport Jauho, Antti-Pekka
1989
32 12 p. 1265-1271
7 p.
artikel
99 Non-linearity and intersubband population inversion in quantum wire structures Briggs, S.
1989
32 12 p. 1657-1661
5 p.
artikel
100 Nonthermalized energy distributions in systems with extremely short carrier lifetimes Höpfel, Ralph A.
1989
32 12 p. 1781-1786
6 p.
artikel
101 Optical analysis of real space hot electron distributions in heterolayers Inoue, M.
1989
32 12 p. 1801-1805
5 p.
artikel
102 Overshoot saturation in ultra-submicron FETs due to minimum acceleration lengths Ryan, J.M.
1989
32 12 p. 1609-1613
5 p.
artikel
103 Phonon-assisted tunnelling of photoexcited carriers from InGaAs quantum wells in applied electric fields Shorthose, M.G.
1989
32 12 p. 1449-1453
5 p.
artikel
104 Phonon emission by a hot two dimensional electron gas at the gallium arsenide/aluminium gallium arsenide interface Hawker, P.
1989
32 12 p. 1755-1759
5 p.
artikel
105 Photoemission of metal-semiconductor structures: Novel spectroscopy for high field transport Peretti, J.
1989
32 12 p. 1681-1684
4 p.
artikel
106 Photoexcited hot carriers: From cw to 6 fs in 20 years Shah, Jagdeep
1989
32 12 p. 1051-1056
6 p.
artikel
107 Photoinjected carrier's acoustic plasma oscillations Esperidião, A.S.
1989
32 12 p. 1225-1227
3 p.
artikel
108 Picosecond optical studies of 2D electron - 2D phonon dynamics Ryan, J.F.
1989
32 12 p. 1429-1435
7 p.
artikel
109 Picosecond photoluminescence measurements of hot carrier relaxation and auger recombination in GaSb Snow, P.A.
1989
32 12 p. 1485-1489
5 p.
artikel
110 Plasma instabilities in quasi two-dimensional electron gases Stark, J.B.
1989
32 12 p. 1327-1330
4 p.
artikel
111 Polar optical phonon scattering of charge carriers in alloy semiconductors: Effects of phonon localization Register, L.F.
1989
32 12 p. 1387-1391
5 p.
artikel
112 Position broadening effect in hot-electron transport Bertoncini, R.
1989
32 12 p. 1167-1171
5 p.
artikel
113 Quantitative measurements of intervalley and carrier-carrier scattering in GaAs with hot (e,A0) luminescence Kash, J.A.
1989
32 12 p. 1277-1281
5 p.
artikel
114 Quantum interference and space charge effects in double barrier structures incorporating wide quantum wells Alves, E.S.
1989
32 12 p. 1627-1631
5 p.
artikel
115 Quantum moment balance equations and resonant tunnelling structures Grubin, H.L.
1989
32 12 p. 1071-1075
5 p.
artikel
116 Real space transfer rates for polar optical phonon scattering from asymmetric quantum wells Lent, Craig
1989
32 12 p. 1479-1483
5 p.
artikel
117 Relaxation of hot carriers in undoped and n-doped Ga0.47In0.53As generated by subpicosecond pulses Rieck, B.
1989
32 12 p. 1405-1409
5 p.
artikel
118 Resonant tunneling in crossed electric and magnetic fields: A tool for investigating extreme hot electron effects England, P.
1989
32 12 p. 1219-1223
5 p.
artikel
119 Resonant tunneling through magnetic edge states Peeters, F.M.
1989
32 12 p. 1309-1313
5 p.
artikel
120 Role of structure sizes in determining the characteristics of the resonant tunneling diode Kluksdahl, N.C.
1989
32 12 p. 1273-1276
4 p.
artikel
121 Screening of the n=2 excitonic resonance by hot carriers in an undoped Ga 0.47 In 0.53 As/Al 0.48 In 0.52 As multiple quantum well structure Lobentanzer, H.
1989
32 12 p. 1875-1879
5 p.
artikel
122 Series addition of ballistic resistors Main, P.C.
1989
32 12 p. 1303-1307
5 p.
artikel
123 Simulation of ultrafast relaxation of photoexcited electrons via analytical distribution functions Zheng, T.F.
1989
32 12 p. 1089-1093
5 p.
artikel
124 Space charge currents, domains and instabilities viewed with voltage contrast spectroscopy Maracas, G.N.
1989
32 12 p. 1887-1893
7 p.
artikel
125 Space-charge effects and ac response of resonant tunneling double-barrier diodes Sheard, F.W.
1989
32 12 p. 1443-1447
5 p.
artikel
126 Space-charge striations Ridley, B.K.
1989
32 12 p. 1393-1397
5 p.
artikel
127 Splitting and shift of hot magnetophonon resonance peaks in a two-dimensional electron gas Warmenbol, P.
1989
32 12 p. 1545-1549
5 p.
artikel
128 Spontaneous oscillations and chaos in silicon induced by excitonic impact ionization Weman, H.
1989
32 12 p. 1563-1566
4 p.
artikel
129 The current density in a double-barrier heterostructure subjected to a transverse magnetic field. The importance of the Ky Cury, L.A.
1989
32 12 p. 1689-1693
5 p.
artikel
130 The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)As Foster, T.J.
1989
32 12 p. 1731-1735
5 p.
artikel
131 The intervalley X6→Γ6, L6 scattering time in GaAs measured by ultrafast pump-probe infrared absorption spectroscopy Wang, W.B.
1989
32 12 p. 1337-1345
9 p.
artikel
132 The one dimensional quantised ballistic resistance in GaAs/AlGaAs heterojunctions with varying experimental conditions Brown, RJ
1989
32 12 p. 1179-1183
5 p.
artikel
133 Theory of ballistic electron transport through quantized constrictions He, Song
1989
32 12 p. 1695-1699
5 p.
artikel
134 Theory of non-linear transport in quantum waveguides Barker, J.R.
1989
32 12 p. 1155-1159
5 p.
artikel
135 Time-domain finite difference and EMC study of hot carrier transport in GaAs on a picosecond scale Lu, Y.
1989
32 12 p. 1297-1301
5 p.
artikel
136 Time-of-flight experiments on 2D electron gases Zwaal, E.A.E.
1989
32 12 p. 1109-1112
4 p.
artikel
137 Time resolved inter-subband relaxation in GaAs/GaAlAs multiple quantum wells Levenson, J.A.
1989
32 12 p. 1869-1873
5 p.
artikel
138 Time-resolved raman scattering measurement of electron-optical phonon intersubband relaxation in GaAs quantum wells Tatham, M.C.
1989
32 12 p. 1497-1501
5 p.
artikel
139 Transient analysis of resonant tunneling hot electron transistor (RHET) Ohnishi, H.
1989
32 12 p. 1905-1909
5 p.
artikel
140 Transient intersubband absorption spectra of hot electrons in a modulation-doped multiple-quantum-well structure Elsaesser, T.
1989
32 12 p. 1707-1711
5 p.
artikel
141 Transport of the photoexcited electron-hole plasma in InP Tsen, K.T.
1989
32 12 p. 1331-1335
5 p.
artikel
142 Transverse diffusion coefficient and carrier density fluctuation derived from the fluctuation of the state occupancy function in semiconductors Nougier, J.P.
1989
32 12 p. 1901-1904
4 p.
artikel
143 Tunable cyclotron resonance laser based on hot holes in germanium applied to FIR spectroscopy of GaAs/AlGaAs heterostructures Unterrainer, K.
1989
32 12 p. 1527-1531
5 p.
artikel
144 Tunneling and energy relaxation of hot electrons in double quantum well structures Sawaki, N.
1989
32 12 p. 1321-1325
5 p.
artikel
145 Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As Alexander, M.G.W.
1989
32 12 p. 1621-1625
5 p.
artikel
146 Two-dimensional simulation of sub-μm GaAs MESFETs with ion-implanted doping Feng, Y.K.
1989
32 12 p. 1719-1722
4 p.
artikel
147 Weighted ensemble Monte Carlo Rota, L.
1989
32 12 p. 1417-1421
5 p.
artikel
148 X-point tunneling in AlAs/GaAs double barrier heterostructures Ting, D.Z.-Y.
1989
32 12 p. 1513-1517
5 p.
artikel
149 Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices Feldmann, J.
1989
32 12 p. 1713-1717
5 p.
artikel
                             149 gevonden resultaten
 
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