| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device
|
Philippopoulos, Pericles
|
|
|
215 |
C |
p.
|
artikel
|
| 2 |
Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure
|
Chen, Yuyun
|
|
|
215 |
C |
p.
|
artikel
|
| 3 |
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K
|
Asanovski, R.
|
|
|
215 |
C |
p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
|
215 |
C |
p.
|
artikel
|
| 5 |
Fabrication of garnet solid electrolytes via sputtering for solid-state batteries
|
Tsai, Shu-Yi
|
|
|
215 |
C |
p.
|
artikel
|
| 6 |
Improvement of power consumption and linearity of integrate/fire characteristics using diffusive memristors with defective graphene for artificial neuron application
|
Song, Moonkyu
|
|
|
215 |
C |
p.
|
artikel
|
| 7 |
Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT)
|
Kim, Do-Kywn
|
|
|
215 |
C |
p.
|
artikel
|
| 8 |
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
|
Bae, Hagyoul
|
|
|
215 |
C |
p.
|
artikel
|
| 9 |
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients
|
Chaturvedi, Mayank
|
|
|
215 |
C |
p.
|
artikel
|
| 10 |
Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology
|
Gau, In-Chi
|
|
|
215 |
C |
p.
|
artikel
|
| 11 |
SOS pseudo-FeFETs after furnace or rapid annealings and thining by thermal oxidation
|
Antonov, V.A.
|
|
|
215 |
C |
p.
|
artikel
|
| 12 |
SPICE simulation of the time-dependent clustering model for dielectric breakdown
|
Salvador, E.
|
|
|
215 |
C |
p.
|
artikel
|
| 13 |
Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopants
|
Kumar Jaisawal, Rajeewa
|
|
|
215 |
C |
p.
|
artikel
|
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