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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
8 results found
| no | title | author | magazine | year | volume | issue | page(s) | type |
| 1 | A unified core model of double-gate and surrounding-gate MOSFETs for circuit simulation |
Colalongo, Luigi |
|
213 | C |
p. |
article |
|
| 2 | Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection |
Wu, Zhongyuan |
|
213 | C |
p. |
article |
|
| 3 | Editorial Board |
|
213 | C |
p. |
article |
||
| 4 | Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing |
Chen, Siheng |
|
213 | C |
p. |
article |
|
| 5 | Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study |
Yang, Ning |
|
213 | C |
p. |
article |
|
| 6 | Quantum information processing in electrically defined Silicon triple quantum dot systems |
Kang, Ji-Hoon |
|
213 | C |
p. |
article |
|
| 7 | Silicon nitride resistance switching MIS cells doped with silicon atoms |
Mavropoulis, A. |
|
213 | C |
p. |
article |
|
| 8 | Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO 2 dielectric for 2.5D MIMCAPs |
Fohn, Corinna |
|
213 | C |
p. |
article |
8 results found