| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A generalizable TCAD framework for silicon FinFET spin qubit devices with electrical control
|
Ding, Qian
|
|
|
200 |
C |
p.
|
artikel
|
| 2 |
Analysis of 1/f and G–R noise in Phosphorene FETs
|
Pon, Adhithan
|
|
|
200 |
C |
p.
|
artikel
|
| 3 |
A novel ferroelectric nanopillar multi-level cell memory
|
Lee, Hyeongu
|
|
|
200 |
C |
p.
|
artikel
|
| 4 |
A proposal of quantum computing algorithm to solve Poisson equation for nanoscale devices under Neumann boundary condition
|
Matsuo, Shingo
|
|
|
200 |
C |
p.
|
artikel
|
| 5 |
Automatic grid refinement for thin material layer etching in process TCAD simulations
|
Lenz, Christoph
|
|
|
200 |
C |
p.
|
artikel
|
| 6 |
Building robust machine learning force fields by composite Gaussian approximation potentials
|
Milardovich, Diego
|
|
|
200 |
C |
p.
|
artikel
|
| 7 |
Compact modeling of photonic devices in Verilog-A for integrated circuit design
|
de Foucauld, Emeric
|
|
|
200 |
C |
p.
|
artikel
|
| 8 |
Comparative analysis of NBTI modeling frameworks BAT and Comphy
|
Ansari, Aseer Israr
|
|
|
200 |
C |
p.
|
artikel
|
| 9 |
Coupling a phase field model with an electro-thermal solver to simulate PCM intermediate resistance states for neuromorphic computing
|
Cueto, O.
|
|
|
200 |
C |
p.
|
artikel
|
| 10 |
Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application
|
Dhar, Rakshita
|
|
|
200 |
C |
p.
|
artikel
|
| 11 |
Discontinuous Galerkin concept for Quantum-Liouville type equations
|
Ganiu, Valmir
|
|
|
200 |
C |
p.
|
artikel
|
| 12 |
3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology
|
Navarro, C.
|
|
|
200 |
C |
p.
|
artikel
|
| 13 |
Editorial Board
|
|
|
|
200 |
C |
p.
|
artikel
|
| 14 |
Effect of layer-specific synaptic retention characteristics on the accuracy of deep neural networks
|
Yoo, Ho-Nam
|
|
|
200 |
C |
p.
|
artikel
|
| 15 |
Effects of oxygen gas in the sputtering process of the WO3 sensing layer on NO2 sensing characteristics of the FET-type gas sensor
|
Jeong, Yujeong
|
|
|
200 |
C |
p.
|
artikel
|
| 16 |
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content
|
Murugan, Balaji
|
|
|
200 |
C |
p.
|
artikel
|
| 17 |
Ferroelectric FDSOI FET modeling for memory and logic applications
|
Chatterjee, Swetaki
|
|
|
200 |
C |
p.
|
artikel
|
| 18 |
Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs
|
Silvestri, Luca
|
|
|
200 |
C |
p.
|
artikel
|
| 19 |
H2S gas sensing properties in polysilicon control-gate FET-type gas sensor
|
Park, Jinwoo
|
|
|
200 |
C |
p.
|
artikel
|
| 20 |
Hybrid 2D/3D mesh for efficient device simulation of locally deformed cylindrical semiconductor devices
|
Jang, Geon-Tae
|
|
|
200 |
C |
p.
|
artikel
|
| 21 |
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
|
Simoen, Eddy
|
|
|
200 |
C |
p.
|
artikel
|
| 22 |
Investigation of effects of lateral boundary conditions on current filament movements in Trench-Gate IGBTs
|
Suwa, Takeshi
|
|
|
200 |
C |
p.
|
artikel
|
| 23 |
Macroscopic analysis and design of Si HFGFET gas sensor for sensitive gas detection
|
Hong, Seongbin
|
|
|
200 |
C |
p.
|
artikel
|
| 24 |
Microstructural impact on electromigration reliability of gold interconnects
|
Ceric, H.
|
|
|
200 |
C |
p.
|
artikel
|
| 25 |
Modeling of SiC transistor with counter-doped channel
|
Vyas, Pratik B.
|
|
|
200 |
C |
p.
|
artikel
|
| 26 |
Modeling thermal effects in STT-MRAM
|
Hadámek, Tomáš
|
|
|
200 |
C |
p.
|
artikel
|
| 27 |
New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs
|
Kom Kammeugne, R.
|
|
|
200 |
C |
p.
|
artikel
|
| 28 |
28 nm FD-SOI MEOL parasitic capacitance segmentation using electrical testing and semiconductor process modeling
|
Vianne, B.
|
|
|
200 |
C |
p.
|
artikel
|
| 29 |
Non-local transport effects in semiconductors under low-field conditions
|
Ancona, M.G.
|
|
|
200 |
C |
p.
|
artikel
|
| 30 |
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions
|
Massarotto, Marco
|
|
|
200 |
C |
p.
|
artikel
|
| 31 |
Performance enhancement for AlGaN/GaN HEMTs with dual discrete field-plate
|
Zhou, Yunlu
|
|
|
200 |
C |
p.
|
artikel
|
| 32 |
Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation
|
Rossi, Chiara
|
|
|
200 |
C |
p.
|
artikel
|
| 33 |
Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework
|
Julliard, P.L.
|
|
|
200 |
C |
p.
|
artikel
|
| 34 |
Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation
|
Choi, Hyunsuk
|
|
|
200 |
C |
p.
|
artikel
|
| 35 |
Strong quantization of current-carrying electron states in δ -layer systems
|
Mamaluy, Denis
|
|
|
200 |
C |
p.
|
artikel
|
| 36 |
Synaptic array using multi-level AND flash memory cells for hardware-based neural networks
|
Lee, Soochang
|
|
|
200 |
C |
p.
|
artikel
|
| 37 |
TCAD-based design and verification of the components of a 200 V GaN-IC platform
|
Vudumula, Pavan
|
|
|
200 |
C |
p.
|
artikel
|
| 38 |
The core-shell junctionless MOSFET
|
Cristoloveanu, Sorin
|
|
|
200 |
C |
p.
|
artikel
|
| 39 |
Theoretical study of carrier transport in supported and gated two-dimensional transition metal dichalcogenides
|
Gopalan, Sanjay
|
|
|
200 |
C |
p.
|
artikel
|
| 40 |
Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement
|
Alshebly, Wisam
|
|
|
200 |
C |
p.
|
artikel
|
| 41 |
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET
|
Rathore, Sunil
|
|
|
200 |
C |
p.
|
artikel
|
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