| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acceleration of semiconductor device simulation using compact charge model
|
Lee, Kwang-Woon
|
|
|
199 |
C |
p.
|
artikel
|
| 2 |
A compact physical expression for the static drain current in heterojunction barrier CNTFETs
|
Annamalai, Manojkumar
|
|
|
199 |
C |
p.
|
artikel
|
| 3 |
A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET
|
Fernandez, Julian G.
|
|
|
199 |
C |
p.
|
artikel
|
| 4 |
A generalizable, uncertainty-aware neural network potential for GeSbTe with Monte Carlo dropout
|
Lee, Sung-Ho
|
|
|
199 |
C |
p.
|
artikel
|
| 5 |
Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation
|
Nishimura, T.
|
|
|
199 |
C |
p.
|
artikel
|
| 6 |
Analytical model of free charge transfer in charge-coupled devices
|
Piechaczek, Denis S.
|
|
|
199 |
C |
p.
|
artikel
|
| 7 |
An atomistic modeling framework for valence change memory cells
|
Kaniselvan, Manasa
|
|
|
199 |
C |
p.
|
artikel
|
| 8 |
An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory
|
Verreck, D.
|
|
|
199 |
C |
p.
|
artikel
|
| 9 |
A physical model for long term data retention characteristics in 3D NAND flash memory
|
Saikia, Rashmi
|
|
|
199 |
C |
p.
|
artikel
|
| 10 |
A rigorous Fermi-Dirac statistics-based MOSFET channel surface potential equation using polylogarithms
|
Ortiz-Conde, Adelmo
|
|
|
199 |
C |
p.
|
artikel
|
| 11 |
Characterization and modeling of drain lag using a modified RC network in the ASM-HEMT framework
|
Nazir, Mohammad Sajid
|
|
|
199 |
C |
p.
|
artikel
|
| 12 |
Comprehensive evaluation of torques in ultra-scaled MRAM devices
|
Fiorentini, S.
|
|
|
199 |
C |
p.
|
artikel
|
| 13 |
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]
|
Catapano, E.
|
|
|
199 |
C |
p.
|
artikel
|
| 14 |
Corrigendum to “TCAD simulations of FDSOI devices down to deep cryogenic temperature” [Solid-State Electron. 194 (2022) 108319]
|
Catapano, E.
|
|
|
199 |
C |
p.
|
artikel
|
| 15 |
Development of an ensemble Monte Carlo simulator for high-power semiconductor devices with self-consistent electromagnetism and GPU implementation
|
Cooke, S.J.
|
|
|
199 |
C |
p.
|
artikel
|
| 16 |
DTCO flow for air spacer generation and its impact on power and performance at N7
|
Filipovic, Lado
|
|
|
199 |
C |
p.
|
artikel
|
| 17 |
Editorial Board
|
|
|
|
199 |
C |
p.
|
artikel
|
| 18 |
Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN:Si/AlN DH-HEMT structure
|
Jung, Donghyeop
|
|
|
199 |
C |
p.
|
artikel
|
| 19 |
Efficient and accurate defect level modeling in monolayer MoS 2 via GW+DFT with open boundary conditions
|
Gandus, Guido
|
|
|
199 |
C |
p.
|
artikel
|
| 20 |
Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application
|
Herrmann, Tom
|
|
|
199 |
C |
p.
|
artikel
|
| 21 |
Forked-contact and dynamically-doped nanosheets to enhance Si and 2D-material devices at the limit of scaling
|
Afzalian, Aryan
|
|
|
199 |
C |
p.
|
artikel
|
| 22 |
GPGPU MCII for high-energy implantation
|
Machida, Fumie
|
|
|
199 |
C |
p.
|
artikel
|
| 23 |
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs
|
Park, Chanwoo
|
|
|
199 |
C |
p.
|
artikel
|
| 24 |
Hierarchical simulation of nanosheet field effect transistor: NESS flow
|
Nagy, Daniel
|
|
|
199 |
C |
p.
|
artikel
|
| 25 |
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme
|
Aeschlimann, J.
|
|
|
199 |
C |
p.
|
artikel
|
| 26 |
Investigation on holding voltage of asymmetric DDSCR with floating heavy doping in 0.18 μm CMOS process
|
Guan, Wenjie
|
|
|
199 |
C |
p.
|
artikel
|
| 27 |
Modeling optical second harmonic generation for oxide/semiconductor interface characterization
|
Mallick, Binit
|
|
|
199 |
C |
p.
|
artikel
|
| 28 |
Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device
|
Thesberg, M.
|
|
|
199 |
C |
p.
|
artikel
|
| 29 |
New insights into the effect of spatially distributed polarization in ferroelectric FET on content addressable memory operation for machine learning applications
|
Su, Chang
|
|
|
199 |
C |
p.
|
artikel
|
| 30 |
Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model
|
Martinie, S.
|
|
|
199 |
C |
p.
|
artikel
|
| 31 |
On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs
|
Gonzalez-Medina, Jose Maria
|
|
|
199 |
C |
p.
|
artikel
|
| 32 |
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
|
Jaisawal, Rajeewa Kumar
|
|
|
199 |
C |
p.
|
artikel
|
| 33 |
RF simulation platform of qubit control using FDSOI technology for quantum computing
|
Jacquinot, H.
|
|
|
199 |
C |
p.
|
artikel
|
| 34 |
Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors
|
Kim, Jeongwoo
|
|
|
199 |
C |
p.
|
artikel
|
| 35 |
SPICE compatible semi-empirical compact model for ferroelectric hysteresis
|
Lederer, Maximilian
|
|
|
199 |
C |
p.
|
artikel
|
| 36 |
Surrogate models for device design using sample-efficient Deep Learning
|
Patel, Rutu
|
|
|
199 |
C |
p.
|
artikel
|
| 37 |
THz gain compression in nanoscale FinFETs
|
Pech, Mathias
|
|
|
199 |
C |
p.
|
artikel
|
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