| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR
|
Issartel, D.
|
|
|
191 |
C |
p.
|
artikel
|
| 2 |
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
|
Crespo-Yepes, A.
|
|
|
191 |
C |
p.
|
artikel
|
| 3 |
Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations
|
Lenz, Christoph
|
|
|
191 |
C |
p.
|
artikel
|
| 4 |
Electrical characterization of stacked SOI nanowires at low temperatures
|
Rodrigues, Jaime C.
|
|
|
191 |
C |
p.
|
artikel
|
| 5 |
Investigation of the different possible energy band structure configurations for planar heterojunction organic solar cells
|
Lamkaouane, Hind
|
|
|
191 |
C |
p.
|
artikel
|
| 6 |
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact
|
Simoen, Eddy
|
|
|
191 |
C |
p.
|
artikel
|
| 7 |
Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon
|
Aguinsky, Luiz Felipe
|
|
|
191 |
C |
p.
|
artikel
|
| 8 |
The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors
|
Wang, S.
|
|
|
191 |
C |
p.
|
artikel
|
| 9 |
Trade-off analysis between gm/ID and fT of nanosheet NMOS transistors with different metal gate stack at high temperature
|
Silva, Vanessa C.P.
|
|
|
191 |
C |
p.
|
artikel
|
Tijdschrift beschrijving