| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage
|
Xiang, Zhenyu
|
|
|
189 |
C |
p.
|
artikel
|
| 2 |
Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs
|
Yi, Boram
|
|
|
189 |
C |
p.
|
artikel
|
| 3 |
Blended polymer as composite insulating layers for organic field effect transistor
|
Sun, Qiang
|
|
|
189 |
C |
p.
|
artikel
|
| 4 |
Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware
|
Castriotta, Michele
|
|
|
189 |
C |
p.
|
artikel
|
| 5 |
Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 °C
|
Sousa, Júlia C.S.
|
|
|
189 |
C |
p.
|
artikel
|
| 6 |
Dispersed and spherically assembled porous NiO nanosheets for low concentration ammonia gas sensing applications
|
Juang, Feng-Renn
|
|
|
189 |
C |
p.
|
artikel
|
| 7 |
Frequency doubler based on unipolar thin-film-transistor technologies
|
Ko, Eun-Hye
|
|
|
189 |
C |
p.
|
artikel
|
| 8 |
High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation
|
Chen, Leilei
|
|
|
189 |
C |
p.
|
artikel
|
| 9 |
Reliable parameter extraction method applied to an enhanced GaN HEMT small-signal model
|
Wang, Shaowei
|
|
|
189 |
C |
p.
|
artikel
|
| 10 |
Synthesis and characterization of ZnO nanoflowers by using simple spray pyrolysis technique
|
Abdulrahman, Ahmed Fattah
|
|
|
189 |
C |
p.
|
artikel
|
| 11 |
Transfer modeling of 1T1R crossbar arrays with line resistances based on matrix algebra method
|
Zhang, Xin
|
|
|
189 |
C |
p.
|
artikel
|
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