| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function
|
Kom Kammeugne, R.
|
|
|
184 |
C |
p.
|
artikel
|
| 2 |
A multi-energy level agnostic simulation approach to defect generation
|
Vici, Andrea
|
|
|
184 |
C |
p.
|
artikel
|
| 3 |
A phenomenological approach to study the magnetoelectric (ME) response of lead free magnetostrictive NiFe2O4–Piezoelectric BaZr0.2Ti0.8O3 particulate composites
|
Chavan, Pradeep
|
|
|
184 |
C |
p.
|
artikel
|
| 4 |
Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna
|
Almalki, S.
|
|
|
184 |
C |
p.
|
artikel
|
| 5 |
Computational study of group III-V semiconductors and their interaction with oxide thin films
|
Cipriano, Luis A.
|
|
|
184 |
C |
p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
|
184 |
C |
p.
|
artikel
|
| 7 |
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
|
Belmonte, A.
|
|
|
184 |
C |
p.
|
artikel
|
| 8 |
Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale
|
Nittayakasetwat, Siri
|
|
|
184 |
C |
p.
|
artikel
|
| 9 |
Fabrication and characterization of GaN-based nanostructure field effect transistors
|
Son, Dong-Hyeok
|
|
|
184 |
C |
p.
|
artikel
|
| 10 |
Fabrication and modelling of MInM diodes with low turn-on voltage
|
Nemr Noureddine, I.
|
|
|
184 |
C |
p.
|
artikel
|
| 11 |
Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs
|
Halder, Arka
|
|
|
184 |
C |
p.
|
artikel
|
| 12 |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs
|
Simoen, Eddy
|
|
|
184 |
C |
p.
|
artikel
|
| 13 |
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements
|
Crespo-Yepes, A.
|
|
|
184 |
C |
p.
|
artikel
|
| 14 |
Poly(V3D3), an iCVD polymer with promising dielectric properties for high voltage capacitors
|
Zavvou, C.
|
|
|
184 |
C |
p.
|
artikel
|
| 15 |
Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model
|
Avnon, Asaf
|
|
|
184 |
C |
p.
|
artikel
|
| 16 |
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
|
Garzón, Esteban
|
|
|
184 |
C |
p.
|
artikel
|
| 17 |
Simulation study of Fermi level depinning in metal-MoS2 contacts
|
Khakbaz, P.
|
|
|
184 |
C |
p.
|
artikel
|
| 18 |
Stability and V min analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability
|
Dutta, Tapas
|
|
|
184 |
C |
p.
|
artikel
|
| 19 |
STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing
|
De Rose, Raffaele
|
|
|
184 |
C |
p.
|
artikel
|
| 20 |
Subbands in a nanoribbon of topologically insulating MoS2 in the 1T′ phase
|
Sverdlov, Viktor
|
|
|
184 |
C |
p.
|
artikel
|
| 21 |
Temperature-dependent performance of Schottky-Barrier FET ultra-low-power diode
|
Schwarz, Mike
|
|
|
184 |
C |
p.
|
artikel
|
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