Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function
Titel:
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function
Auteur:
Kom Kammeugne, R. Leroux, C. Cluzel, J. Vauche, L. Le Royer, C. Krakovinsky, A. Gwoziecki, R. Biscarrat, J. Gaillard, F. Charles, M. Bano, E. Ghibaudo, G.