| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies
|
Pérez, Eduardo
|
|
|
176 |
C |
p.
|
artikel
|
| 2 |
Carbon-based, all-inorganic, lead-free Ag2BiI5 rudorffite solar cells with high photovoltages
|
He, Fengqin
|
|
|
176 |
C |
p.
|
artikel
|
| 3 |
Comparative study of metamorphic InAs layers grown on GaAs and Si for mid-infrared photodetectors
|
Ryu, Geunhwan
|
|
|
176 |
C |
p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
|
176 |
C |
p.
|
artikel
|
| 5 |
Effect of organic solvent vapor treatment on transistor performance and contact resistance of copper phthalocyanine based organic field-effect transistors
|
Kumar, Pankaj
|
|
|
176 |
C |
p.
|
artikel
|
| 6 |
High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers
|
Lee, Sang Tae
|
|
|
176 |
C |
p.
|
artikel
|
| 7 |
Indium oxide nanoparticles for resistive RAM integration using a compatible industrial technology
|
Guenery, P.V.
|
|
|
176 |
C |
p.
|
artikel
|
| 8 |
On the diffusion current in a MOSFET operated down to deep cryogenic temperatures
|
Ghibaudo, G.
|
|
|
176 |
C |
p.
|
artikel
|
| 9 |
Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration
|
Guitarra, Silvana
|
|
|
176 |
C |
p.
|
artikel
|
| 10 |
Trapping effects on AlGaN/GaN HEMT characteristics
|
Vigneshwara Raja, P.
|
|
|
176 |
C |
p.
|
artikel
|
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