| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs
|
Jaikumar, M.G.
|
|
2019
|
156 |
C |
p. 73-78
|
artikel
|
| 2 |
Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions
|
Bae, Min Soo
|
|
2019
|
156 |
C |
p. 48-57
|
artikel
|
| 3 |
Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films
|
Dominguez, Miguel A.
|
|
2019
|
156 |
C |
p. 12-15
|
artikel
|
| 4 |
Degradation and failure mechanism of AlGaN-based UVC-LEDs
|
Ma, Zhanhong
|
|
2019
|
156 |
C |
p. 92-96
|
artikel
|
| 5 |
Editorial Board
|
|
|
2019
|
156 |
C |
p. ii
|
artikel
|
| 6 |
Effect of a pentacene anode buffer on the performance of small-molecule organic solar cells
|
Hanya, Kazuhiro
|
|
2019
|
156 |
C |
p. 62-72
|
artikel
|
| 7 |
Effect of beveled mesa angle on the leakage performance of 4H-SiC avalanche photodiodes
|
Chong, Eugene
|
|
2019
|
156 |
C |
p. 1-4
|
artikel
|
| 8 |
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs
|
Grill, A.
|
|
2019
|
156 |
C |
p. 41-47
|
artikel
|
| 9 |
Feasibility of plasmonic circuits for on-chip interconnects
|
Fukuda, M.
|
|
2019
|
156 |
C |
p. 33-40
|
artikel
|
| 10 |
Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures
|
Cerdeira, A.
|
|
2019
|
156 |
C |
p. 16-22
|
artikel
|
| 11 |
Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment
|
Li, Mengjun
|
|
2019
|
156 |
C |
p. 58-61
|
artikel
|
| 12 |
Improvement of sensing margin and reset switching fail of RRAM
|
Park, Woo Young
|
|
2019
|
156 |
C |
p. 87-91
|
artikel
|
| 13 |
Influence of BEOL process on poly-Si grain boundary traps passivation in 3D NAND flash memory
|
Zhao, Yuexin
|
|
2019
|
156 |
C |
p. 28-32
|
artikel
|
| 14 |
Investigation on dependency mechanism of inverter voltage gain on current level of photo stressed depletion mode thin-film transistors
|
Lee, Byeong Hyeon
|
|
2019
|
156 |
C |
p. 5-11
|
artikel
|
| 15 |
Lumped-parameter equivalent circuit modeling of solar cells with S-shaped I-V characteristics
|
Yu, Fei
|
|
2019
|
156 |
C |
p. 79-86
|
artikel
|
| 16 |
Synaptic device using a floating fin-body MOSFET with memory functionality for neural network
|
Woo, Sung Yun
|
|
2019
|
156 |
C |
p. 23-27
|
artikel
|
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