| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors
|
Kim, Woo-Sic
|
|
2017
|
137 |
C |
p. 22-28
7 p.
|
artikel
|
| 2 |
A compact D-band monolithic APDP-based sub-harmonic mixer
|
Zhang, Shengzhou
|
|
2017
|
137 |
C |
p. 62-69
8 p.
|
artikel
|
| 3 |
Analysis of Self-Heating Effects on vertical FET according to Shallow Trench Isolation
|
Myeong, Ilho
|
|
2017
|
137 |
C |
p. 123-127
5 p.
|
artikel
|
| 4 |
A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT
|
Nguyen, Tung The-Lam
|
|
2017
|
137 |
C |
p. 109-116
8 p.
|
artikel
|
| 5 |
A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design
|
Chien, Feng-Tso
|
|
2017
|
137 |
C |
p. 10-15
6 p.
|
artikel
|
| 6 |
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
|
Hosenfeld, Fabian
|
|
2017
|
137 |
C |
p. 70-79
10 p.
|
artikel
|
| 7 |
A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime
|
Yu, Fei
|
|
2017
|
137 |
C |
p. 38-43
6 p.
|
artikel
|
| 8 |
Double-trap model for hysteretic current-voltage characteristics of a polystyrene/ZnO nanorods stacked layer
|
Wu, You-Lin
|
|
2017
|
137 |
C |
p. 58-61
4 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
2017
|
137 |
C |
p. IFC-
1 p.
|
artikel
|
| 10 |
Electrothermal DC characterization of GaN on Si MOS-HEMTs
|
Rodríguez, R.
|
|
2017
|
137 |
C |
p. 44-51
8 p.
|
artikel
|
| 11 |
ESD robustness concern for SOI-LIGBTs with typical latch-up immunity structures
|
Ye, Ran
|
|
2017
|
137 |
C |
p. 6-9
4 p.
|
artikel
|
| 12 |
Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200mm Si
|
Kumar, Sandeep
|
|
2017
|
137 |
C |
p. 117-122
6 p.
|
artikel
|
| 13 |
Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics
|
Vidor, Fábio F.
|
|
2017
|
137 |
C |
p. 16-21
6 p.
|
artikel
|
| 14 |
Low frequency noise in tunneling field effect transistors
|
Bu, S.T.
|
|
2017
|
137 |
C |
p. 95-101
7 p.
|
artikel
|
| 15 |
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse
|
Hemmi, Fuyumi
|
|
2017
|
137 |
C |
p. 1-5
5 p.
|
artikel
|
| 16 |
28nm CMOS process ESD protection based on diode-triggered silicon controlled rectifier
|
Li, Xiang
|
|
2017
|
137 |
C |
p. 128-133
6 p.
|
artikel
|
| 17 |
Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect
|
Guha, K.
|
|
2017
|
137 |
C |
p. 85-94
10 p.
|
artikel
|
| 18 |
Sputtered boron indium oxide thin-film transistors
|
Stewart, Kevin A.
|
|
2017
|
137 |
C |
p. 80-84
5 p.
|
artikel
|
| 19 |
Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates
|
Wang, Hui
|
|
2017
|
137 |
C |
p. 52-57
6 p.
|
artikel
|
| 20 |
Theoretical performance of mid wavelength HgCdTe(100) heterostructure infrared detectors
|
Kopytko, M.
|
|
2017
|
137 |
C |
p. 102-108
7 p.
|
artikel
|
| 21 |
Turn-off failure in multi-finger SOI-LIGBT used for single chip inverter ICs
|
Zhang, Long
|
|
2017
|
137 |
C |
p. 29-37
9 p.
|
artikel
|
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