| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
|
Ahmed, Nadim
|
|
2017
|
132 |
C |
p. 64-72
9 p.
|
artikel
|
| 2 |
Cu(In, Ga)Se2 thin film solar cells grown at low temperatures
|
Zhang, W.
|
|
2017
|
132 |
C |
p. 57-63
7 p.
|
artikel
|
| 3 |
Dielectric characterization of CuxS-NiySz/FNBR and CuS-NiySz/FNBR nanocomposites
|
Balayeva, Ofeliya O.
|
|
2017
|
132 |
C |
p. 31-38
8 p.
|
artikel
|
| 4 |
3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters
|
Alim, Mohammad A.
|
|
2017
|
132 |
C |
p. 24-30
7 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2017
|
132 |
C |
p. IFC-
1 p.
|
artikel
|
| 6 |
Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors
|
Kim, Hyung Yoon
|
|
2017
|
132 |
C |
p. 73-79
7 p.
|
artikel
|
| 7 |
Effect of p-GaN layer grown with H2 carrier gas on wall-plug efficiency of high-power LEDs
|
Lu, Kuan Fu
|
|
2017
|
132 |
C |
p. 86-90
5 p.
|
artikel
|
| 8 |
Electrically heterogeneous high dielectric BaTi0.4(Fe0.5Nb0.5)0.6O3 ceramic
|
Patel, Piyush Kumar
|
|
2017
|
132 |
C |
p. 39-44
6 p.
|
artikel
|
| 9 |
HfO2-based resistive switching memory with CNTs electrode for high density storage
|
Cheng, W.K.
|
|
2017
|
132 |
C |
p. 19-23
5 p.
|
artikel
|
| 10 |
Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation
|
Matsukawa, Takashi
|
|
2017
|
132 |
C |
p. 103-108
6 p.
|
artikel
|
| 11 |
Investigation on scalability of dual trench epitaxial diode for phase change memory
|
Wang, Heng
|
|
2017
|
132 |
C |
p. 99-102
4 p.
|
artikel
|
| 12 |
Modelling of resonant MEMS magnetic field sensor with electromagnetic induction sensing
|
Liu, Song
|
|
2017
|
132 |
C |
p. 91-98
8 p.
|
artikel
|
| 13 |
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
|
Acurio, E.
|
|
2017
|
132 |
C |
p. 49-56
8 p.
|
artikel
|
| 14 |
PLL application research of a broadband MEMS phase detector: Theory, measurement and modeling
|
Han, Juzheng
|
|
2017
|
132 |
C |
p. 6-11
6 p.
|
artikel
|
| 15 |
Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiN x -based resistive memory
|
Kim, Min-Hwi
|
|
2017
|
132 |
C |
p. 109-114
6 p.
|
artikel
|
| 16 |
Stacked resistive switches for AND/OR logic gates
|
Kim, Myung Ju
|
|
2017
|
132 |
C |
p. 45-48
4 p.
|
artikel
|
| 17 |
Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
|
Palumbo, F.
|
|
2017
|
132 |
C |
p. 12-18
7 p.
|
artikel
|
| 18 |
The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology
|
Tsai, Ying-Chieh
|
|
2017
|
132 |
C |
p. 80-85
6 p.
|
artikel
|
| 19 |
Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming
|
Wang, Xiao
|
|
2017
|
132 |
C |
p. 1-5
5 p.
|
artikel
|
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