| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical approximation of the InGaZnO thin-film transistors surface potential
|
Colalongo, Luigi
|
|
2016
|
124 |
C |
p. 1-4
4 p.
|
artikel
|
| 2 |
A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach
|
Hung, Ching-Wen
|
|
2016
|
124 |
C |
p. 5-9
5 p.
|
artikel
|
| 3 |
Behavior of subthreshold conduction in junctionless transistors
|
Park, So Jeong
|
|
2016
|
124 |
C |
p. 58-63
6 p.
|
artikel
|
| 4 |
Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology
|
Lin, Chun-Yu
|
|
2016
|
124 |
C |
p. 28-34
7 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2016
|
124 |
C |
p. IFC-
1 p.
|
artikel
|
| 6 |
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14nm node FinFETs
|
Qin, Changliang
|
|
2016
|
124 |
C |
p. 10-15
6 p.
|
artikel
|
| 7 |
Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric
|
Saeidi, A.
|
|
2016
|
124 |
C |
p. 16-23
8 p.
|
artikel
|
| 8 |
Stable single-mode distributed feedback quantum cascade lasers at λ ∼4.25μm with low power consumption
|
Jia, Zhiwei
|
|
2016
|
124 |
C |
p. 42-45
4 p.
|
artikel
|
| 9 |
Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs
|
Hemmat, Maedeh
|
|
2016
|
124 |
C |
p. 46-53
8 p.
|
artikel
|
| 10 |
Surface plasmon enhanced the responsivity of the ZnO/Pt nanoparticles/ZnO sandwich structured photodetector via optimizing the thickness of the top ZnO layer
|
Guo, Zexuan
|
|
2016
|
124 |
C |
p. 24-27
4 p.
|
artikel
|
| 11 |
The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6
|
Kil, Yeon-Ho
|
|
2016
|
124 |
C |
p. 35-41
7 p.
|
artikel
|
| 12 |
TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs
|
Yoon, Young Jun
|
|
2016
|
124 |
C |
p. 54-57
4 p.
|
artikel
|
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