| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abrupt PN junctions: Analytical solutions under equilibrium and non-equilibrium
|
Khorasani, Sina
|
|
2016
|
122 |
C |
p. 37-44
8 p.
|
artikel
|
| 2 |
Band offset of vanadium-doped molybdenum oxide hole transport layer in organic photovoltaics
|
Chang, Feng-Kuei
|
|
2016
|
122 |
C |
p. 18-22
5 p.
|
artikel
|
| 3 |
Bulk FinFETs with body spacers for improving fin height variation
|
Wei, Xing
|
|
2016
|
122 |
C |
p. 45-51
7 p.
|
artikel
|
| 4 |
Charge-based compact analytical model for triple-gate junctionless nanowire transistors
|
Ávila-Herrera, F.
|
|
2016
|
122 |
C |
p. 23-31
9 p.
|
artikel
|
| 5 |
Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method
|
Toumi, S.
|
|
2016
|
122 |
C |
p. 56-63
8 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2016
|
122 |
C |
p. IFC-
1 p.
|
artikel
|
| 7 |
Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs
|
Kim, Seong Kwang
|
|
2016
|
122 |
C |
p. 8-12
5 p.
|
artikel
|
| 8 |
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
|
Lee, Jae-Gil
|
|
2016
|
122 |
C |
p. 32-36
5 p.
|
artikel
|
| 9 |
Investigation of thermal atomic layer deposited TiAlX (X=N or C) film as metal gate
|
Xiang, Jinjuan
|
|
2016
|
122 |
C |
p. 64-69
6 p.
|
artikel
|
| 10 |
Single-mode tapered terahertz quantum cascade lasers with lateral gratings
|
Yao, C.
|
|
2016
|
122 |
C |
p. 52-55
4 p.
|
artikel
|
| 11 |
Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors
|
Bescond, M.
|
|
2016
|
122 |
C |
p. 1-7
7 p.
|
artikel
|
| 12 |
Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts
|
Takhar, Kuldeep
|
|
2016
|
122 |
C |
p. 70-74
5 p.
|
artikel
|
| 13 |
The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance
|
Fan, S.-T.
|
|
2016
|
122 |
C |
p. 13-17
5 p.
|
artikel
|
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