| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A circuit model for defective bilayer graphene transistors
|
Umoh, Ime J.
|
|
2016
|
119 |
C |
p. 33-38
6 p.
|
artikel
|
| 2 |
A study on geometry effect of transmission coil for micro size magnetic induction coil
|
Lee, Kyung Hwa
|
|
2016
|
119 |
C |
p. 45-49
5 p.
|
artikel
|
| 3 |
Compact model for non-local avalanche effect in advanced bipolar transistors: An assessment of the relaxation length and its temperature dependence
|
Setekera, Robert
|
|
2016
|
119 |
C |
p. 39-44
6 p.
|
artikel
|
| 4 |
Corrigendum to “High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications” [Solid State Electron. 105 (2015) 6–11]
|
Golshani, Negin
|
|
2016
|
119 |
C |
p. 50-
1 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2016
|
119 |
C |
p. IFC-
1 p.
|
artikel
|
| 6 |
Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors
|
Kwon, Sung-Kyu
|
|
2016
|
119 |
C |
p. 29-32
4 p.
|
artikel
|
| 7 |
Equivalent-circuit modeling of a MEMS phase detector for phase-locked loop applications
|
Han, Juzheng
|
|
2016
|
119 |
C |
p. 5-10
6 p.
|
artikel
|
| 8 |
Evolution of the gate current in 32nm MOSFETs under irradiation
|
Palumbo, F.
|
|
2016
|
119 |
C |
p. 19-24
6 p.
|
artikel
|
| 9 |
Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition
|
Martyniuk, Piotr
|
|
2016
|
119 |
C |
p. 1-4
4 p.
|
artikel
|
| 10 |
Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications
|
Alim, Mohammad A.
|
|
2016
|
119 |
C |
p. 11-18
8 p.
|
artikel
|
| 11 |
Trigger voltage walk-out phenomenon in SOI lateral insulated gate bipolar transistor under repetitive electrostatic discharge stresses
|
Zhang, Shifeng
|
|
2016
|
119 |
C |
p. 25-28
4 p.
|
artikel
|
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