| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism
|
Martino, Marcio Dalla Valle
|
|
2015
|
112 |
C |
p. 51-55
5 p.
|
artikel
|
| 2 |
Consistent low-field mobility modeling for advanced MOS devices
|
Stanojević, Zlatan
|
|
2015
|
112 |
C |
p. 37-45
9 p.
|
artikel
|
| 3 |
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs, including simple treatment of quantization effects
|
Holtij, Thomas
|
|
2015
|
112 |
C |
p. 85-98
14 p.
|
artikel
|
| 4 |
Dual Ground Plane for high-voltage MOSFET in UTBB FDSOI technology
|
Litty, Antoine
|
|
2015
|
112 |
C |
p. 7-12
6 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2015
|
112 |
C |
p. IFC-
1 p.
|
artikel
|
| 6 |
Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films
|
Osintsev, Dmitri
|
|
2015
|
112 |
C |
p. 46-50
5 p.
|
artikel
|
| 7 |
Enhanced dynamic threshold voltage UTBB SOI nMOSFETs
|
Sasaki, K.R.A.
|
|
2015
|
112 |
C |
p. 19-23
5 p.
|
artikel
|
| 8 |
Future of nano CMOS technology
|
Iwai, Hiroshi
|
|
2015
|
112 |
C |
p. 56-67
12 p.
|
artikel
|
| 9 |
Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy
|
Achour, H.
|
|
2015
|
112 |
C |
p. 1-6
6 p.
|
artikel
|
| 10 |
In depth characterization of electron transport in 14nm FD-SOI CMOS devices
|
Shin, Minju
|
|
2015
|
112 |
C |
p. 13-18
6 p.
|
artikel
|
| 11 |
Mechanical characterization and modelling of Lorentz force based MEMS magnetic field sensors
|
Gkotsis, P.
|
|
2015
|
112 |
C |
p. 68-77
10 p.
|
artikel
|
| 12 |
Parasitic bipolar effect in ultra-thin FD SOI MOSFETs
|
Liu, F.Y.
|
|
2015
|
112 |
C |
p. 29-36
8 p.
|
artikel
|
| 13 |
Role of the gate in ballistic nanowire SOI MOSFETs
|
Mangla, A.
|
|
2015
|
112 |
C |
p. 24-28
5 p.
|
artikel
|
| 14 |
Trigate nanowire MOSFETs analog figures of merit
|
Kilchytska, V.
|
|
2015
|
112 |
C |
p. 78-84
7 p.
|
artikel
|
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