| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absorption coefficients of GeSn extracted from PIN photodetector response
|
Ye, Kaiheng
|
|
2015
|
110 |
C |
p. 71-75
5 p.
|
artikel
|
| 2 |
Arsenic atomic layer doping in Si using AsH3
|
Yamamoto, Yuji
|
|
2015
|
110 |
C |
p. 29-34
6 p.
|
artikel
|
| 3 |
Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys
|
Xu, Chi
|
|
2015
|
110 |
C |
p. 76-82
7 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
2015
|
110 |
C |
p. IFC-
1 p.
|
artikel
|
| 5 |
Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1− x − y Ge x Sn y layers on SiO2
|
Yamaha, Takashi
|
|
2015
|
110 |
C |
p. 54-58
5 p.
|
artikel
|
| 6 |
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
|
Baert, B.
|
|
2015
|
110 |
C |
p. 65-70
6 p.
|
artikel
|
| 7 |
Enhanced light emission from Ge by GeO2 micro hemispheres
|
Chen, Yen-Yu
|
|
2015
|
110 |
C |
p. 83-85
3 p.
|
artikel
|
| 8 |
Epitaxial formation of Ni germanide on Ge(001) substrate by reactive deposition
|
Deng, Yunsheng
|
|
2015
|
110 |
C |
p. 44-48
5 p.
|
artikel
|
| 9 |
Epitaxial growth and crystalline properties of Ge1− x − y Si x Sn y on Ge(001) substrates
|
Asano, Takanori
|
|
2015
|
110 |
C |
p. 49-53
5 p.
|
artikel
|
| 10 |
Facet engineering for SiGe/Si stressors in advanced CMOS technology
|
Kasim, Johnson
|
|
2015
|
110 |
C |
p. 19-22
4 p.
|
artikel
|
| 11 |
Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and Ar environment
|
Minami, Kaichiro
|
|
2015
|
110 |
C |
p. 40-43
4 p.
|
artikel
|
| 12 |
Novel Si–Ge–C superlattices and their applications
|
Augusto, Carlos J.R.P.
|
|
2015
|
110 |
C |
p. 1-9
9 p.
|
artikel
|
| 13 |
Optimization of ISBD embedded SiGe layers to prevent delamination process for MOSFET applications
|
Wasyluk, Joanna
|
|
2015
|
110 |
C |
p. 23-28
6 p.
|
artikel
|
| 14 |
Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate
|
Myronov, Maksym
|
|
2015
|
110 |
C |
p. 35-39
5 p.
|
artikel
|
| 15 |
SiGe channel deposition by batch epitaxy
|
Reichel, Carsten
|
|
2015
|
110 |
C |
p. 14-18
5 p.
|
artikel
|
| 16 |
Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension
|
Chang, Wen-Teng
|
|
2015
|
110 |
C |
p. 10-13
4 p.
|
artikel
|
| 17 |
Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
|
Schulze, Jörg
|
|
2015
|
110 |
C |
p. 59-64
6 p.
|
artikel
|
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