| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An efficient BTX sensor based on ZnO nanoflowers grown by CBD method
|
Acharyya, D.
|
|
2015
|
106 |
C |
p. 18-26
9 p.
|
artikel
|
| 2 |
Doping induces large variation in the electrical properties of MoS2 monolayers
|
Eshun, Kwesi
|
|
2015
|
106 |
C |
p. 44-49
6 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2015
|
106 |
C |
p. IFC-
1 p.
|
artikel
|
| 4 |
Effect of SiN x gate insulator thickness on electrical properties of SiN x /In0.17Al0.83N/AlN/GaN MIS–HEMTs
|
Downey, B.P.
|
|
2015
|
106 |
C |
p. 12-17
6 p.
|
artikel
|
| 5 |
High accuracy thermal resistance measurement in GaN/InGaN laser diodes
|
Wen, Pengyan
|
|
2015
|
106 |
C |
p. 50-53
4 p.
|
artikel
|
| 6 |
Numerical study of inhomogeneity effects on Hall measurements of graphene films
|
Lee, Kangmu
|
|
2015
|
106 |
C |
p. 34-43
10 p.
|
artikel
|
| 7 |
Obtaining DC and AC isothermal electrical characteristics for RF MOSFET
|
Sahoo, A.K.
|
|
2015
|
106 |
C |
p. 78-80
3 p.
|
artikel
|
| 8 |
On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
|
Djezzar, Boualem
|
|
2015
|
106 |
C |
p. 54-62
9 p.
|
artikel
|
| 9 |
Palladium contamination in silicon
|
Polignano, M.L.
|
|
2015
|
106 |
C |
p. 68-77
10 p.
|
artikel
|
| 10 |
Radiation-enhanced gate-induced-drain-leakage current in the 130nm partially-depleted SOI pMOSFET
|
Peng, Chao
|
|
2015
|
106 |
C |
p. 81-86
6 p.
|
artikel
|
| 11 |
Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties
|
Kolkovsky, Vl.
|
|
2015
|
106 |
C |
p. 63-67
5 p.
|
artikel
|
| 12 |
Static impedance behavior of programmable metallization cells
|
Rajabi, S.
|
|
2015
|
106 |
C |
p. 27-33
7 p.
|
artikel
|
| 13 |
Sub-threshold 10T SRAM bit cell with read/write XY selection
|
Feki, Anis
|
|
2015
|
106 |
C |
p. 1-11
11 p.
|
artikel
|
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