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                             44 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An accurate continuous level indication for precursor bubblers Kanjolia, R.K.
 2004
 261 2-3 p. 236-240
5 p.
 artikel
2 A new approach to performing equilibrium surface reaction calculations and its application to predicting growth of gallium nitride Mazumder, Sandip
 2004
 261 2-3 p. 165-174
10 p.
 artikel
3 Announcement ICCG-14/ICVGE-12 2004
 261 2-3 p. viii-
1 p.
 artikel
4 Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes Lin, C.F.
 2004
 261 2-3 p. 359-363
5 p.
 artikel
5 Characterization of optical and electrical quality of Mg-doped In x Ga1−x N grown by MOCVD Lee, Sung-Nam
 2004
 261 2-3 p. 249-252
4 p.
 artikel
6 Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy Hara, S.
 2004
 261 2-3 p. 330-335
6 p.
 artikel
7 Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Kadinski, L.
 2004
 261 2-3 p. 175-181
7 p.
 artikel
8 Contents OMVPE-11 2004
 261 2-3 p. ix-xi
nvt p.
 artikel
9 Correlations between electrical and optical properties for OMVPE InN Yamamoto, A.
 2004
 261 2-3 p. 275-279
5 p.
 artikel
10 Deposition and characterization of zirconium tin titanate thin films as a potential high-k material for electronic devices Mays, E.L
 2004
 261 2-3 p. 309-315
7 p.
 artikel
11 Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor Yakovlev, E.V.
 2004
 261 2-3 p. 182-189
8 p.
 artikel
12 Editorial Board 2004
 261 2-3 p. ii-
1 p.
 artikel
13 Effect of initial process conditions on the structural properties of AlN films Paduano, Q.S.
 2004
 261 2-3 p. 259-265
7 p.
 artikel
14 Employment of a GaN buffer in the OMVPE growth of InN on sapphire substrates Yamamoto, A.
 2004
 261 2-3 p. 271-274
4 p.
 artikel
15 Fundamental kinetics determining growth rate profiles of InP and GaAs in MOCVD with horizontal reactor Im, Ik-Tae
 2004
 261 2-3 p. 214-224
11 p.
 artikel
16 Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices Wang, C.A.
 2004
 261 2-3 p. 372-378
7 p.
 artikel
17 High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE Fetzer, C.M.
 2004
 261 2-3 p. 341-348
8 p.
 artikel
18 In situ monitored MOVPE growth of undoped and p-doped GaSb(100) Kollonitsch, Z.
 2004
 261 2-3 p. 289-293
5 p.
 artikel
19 In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors Hoffman Jr., Richard W.
 2004
 261 2-3 p. 301-308
8 p.
 artikel
20 In situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates Raghavan, Srinivasan
 2004
 261 2-3 p. 294-300
7 p.
 artikel
21 Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE Sudo, Shinya
 2004
 261 2-3 p. 404-410
7 p.
 artikel
22 Metalorganic chemical vapor deposition and characterizations of epitaxial Mg x Zn1−x O (0⩽x⩽0.33) films on r-sapphire substrates Muthukumar, S.
 2004
 261 2-3 p. 316-323
8 p.
 artikel
23 MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850nm emission wavelength Kuo, H.C.
 2004
 261 2-3 p. 355-358
4 p.
 artikel
24 Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors Mazaev, K.M.
 2004
 261 2-3 p. 190-196
7 p.
 artikel
25 MOVPE growth of Ga 3D structures for fabrication of GaN materials Sacilotti, M.
 2004
 261 2-3 p. 253-258
6 p.
 artikel
26 Nature of the parasitic chemistry during AlGaInN OMVPE Creighton, J.Randall
 2004
 261 2-3 p. 204-213
10 p.
 artikel
27 New DFB grating structure using dopant-induced refractive index step Glew, R.W.
 2004
 261 2-3 p. 349-354
6 p.
 artikel
28 [No title] Caneau, Catherine G.
 2004
 261 2-3 p. vii-
1 p.
 artikel
29 OMVPE of GaAsSbN for long wavelength emission on GaAs Peake, G.M.
 2004
 261 2-3 p. 398-403
6 p.
 artikel
30 Optimal spectral region for real-time monitoring of sub-ppm levels of water in phosphine by cavity ring-down spectroscopy Lehman, Susan Y.
 2004
 261 2-3 p. 225-230
6 p.
 artikel
31 Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) substrate Yamamoto, A.
 2004
 261 2-3 p. 266-270
5 p.
 artikel
32 Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts Wang, C.A.
 2004
 261 2-3 p. 379-384
6 p.
 artikel
33 Performance of single use purifiers vs. regenerable purifiers for growth of high brightness gallium nitride LEDs Torres, Robert
 2004
 261 2-3 p. 231-235
5 p.
 artikel
34 Performance of sub-atmospheric pressure hydride gas source and delivery system for MOCVD Raynor, M.W
 2004
 261 2-3 p. 241-248
8 p.
 artikel
35 Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE Sugiyama, Masakazu
 2004
 261 2-3 p. 411-418
8 p.
 artikel
36 Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy Wang, C.A
 2004
 261 2-3 p. 385-392
8 p.
 artikel
37 Simulation of GaN and InGaN p–i–n and n–i–n photo-devices Poochinda, Kunakorn
 2004
 261 2-3 p. 336-340
5 p.
 artikel
38 Structure and properties of GaN x O y films grown by nitridation of GaAs (100) substrates Marco de Lucas, M.C.
 2004
 261 2-3 p. 324-329
6 p.
 artikel
39 Study of the incorporation factor (K) and its application to laser diode production Hansen, D.M.
 2004
 261 2-3 p. 364-371
8 p.
 artikel
40 Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD Oda, Yasuhiro
 2004
 261 2-3 p. 393-397
5 p.
 artikel
41 The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials Oh, Ho-jin
 2004
 261 2-3 p. 419-426
8 p.
 artikel
42 The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor Forbes, D.V.
 2004
 261 2-3 p. 427-432
6 p.
 artikel
43 The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD Cederberg, J.G.
 2004
 261 2-3 p. 197-203
7 p.
 artikel
44 Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry Bchir, Omar J.
 2004
 261 2-3 p. 280-288
9 p.
 artikel
                             44 gevonden resultaten
 
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