| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adsorption and desorption of atomic hydrogen on Si(001) and its effects on Si MBE
|
Sakamoto, Kunihiro
|
|
1995
|
157 |
1-4 |
p. 295-299
5 p.
|
artikel
|
| 2 |
Anomalous spectral shift of photoluminescence from MBE-grown strained Si 1−x Ge x Si quantum wells mediated by atomic hydrogen
|
Ohta, G.
|
|
1995
|
157 |
1-4 |
p. 36-39
4 p.
|
artikel
|
| 3 |
A particular epitaxial Si1 − y C y alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy
|
Claverie, A.
|
|
1995
|
157 |
1-4 |
p. 420-425
6 p.
|
artikel
|
| 4 |
Arsenic doping in Si-MBE using low energy ion implantation (LEII)
|
Collart, E.J.H.
|
|
1995
|
157 |
1-4 |
p. 349-352
4 p.
|
artikel
|
| 5 |
A silicon molecular beam epitaxy system dedicated to device-oriented material research
|
Ni, W.-X.
|
|
1995
|
157 |
1-4 |
p. 285-294
10 p.
|
artikel
|
| 6 |
Assessment of intervalley f-scattering time constants in Si SiGe heterostructures
|
Beisswanger, F.
|
|
1995
|
157 |
1-4 |
p. 222-226
5 p.
|
artikel
|
| 7 |
Author index
|
|
|
1995
|
157 |
1-4 |
p. 442-448
7 p.
|
artikel
|
| 8 |
Characterization of highly boron-doped Si, Si1 − x Ge x and Ge layers by high-resolution transmission electron microscopy
|
Radamson, H.H.
|
|
1995
|
157 |
1-4 |
p. 80-84
5 p.
|
artikel
|
| 9 |
Comparison of different Si Ge alloy buffer concepts for (Si m Ge n)p superlattices
|
Dettmer, K.
|
|
1995
|
157 |
1-4 |
p. 142-146
5 p.
|
artikel
|
| 10 |
Crystallization of a-Si1 − x Ge x: decomposition and modulated structure formation features
|
Edelman, F.
|
|
1995
|
157 |
1-4 |
p. 177-180
4 p.
|
artikel
|
| 11 |
Device quality of in situ plasma cleaning for silicon molecular beam epitaxy
|
Hansch, W.
|
|
1995
|
157 |
1-4 |
p. 100-104
5 p.
|
artikel
|
| 12 |
Dislocation patterning and nanostructure engineering in compositionally graded Si 1 − x Ge x Si layer systems
|
Shiryaev, S.Yu.
|
|
1995
|
157 |
1-4 |
p. 132-136
5 p.
|
artikel
|
| 13 |
Early stages of growth of β-SiC on Si by MBE
|
Zekentes, K.
|
|
1995
|
157 |
1-4 |
p. 392-399
8 p.
|
artikel
|
| 14 |
Editorial Board
|
|
|
1995
|
157 |
1-4 |
p. ii-
1 p.
|
artikel
|
| 15 |
Effect of RTCVD growth conditions on the crystal quality of pseudomorphic Si1-x-y Ge xCy films
|
Mi, Jian
|
|
1995
|
157 |
1-4 |
p. 190-194
5 p.
|
artikel
|
| 16 |
Electrical characteristics of Si √3 × √3B Si(111) structures by gas-source MBE
|
Uji, Hiroshi
|
|
1995
|
157 |
1-4 |
p. 105-108
4 p.
|
artikel
|
| 17 |
Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon
|
Basaran, E.
|
|
1995
|
157 |
1-4 |
p. 109-112
4 p.
|
artikel
|
| 18 |
Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy
|
Matsumura, A.
|
|
1995
|
157 |
1-4 |
p. 373-377
5 p.
|
artikel
|
| 19 |
Electron mobility enhancement in a strained Si channel
|
Garchery, L.
|
|
1995
|
157 |
1-4 |
p. 367-372
6 p.
|
artikel
|
| 20 |
Field-driven blue shift of excitonic photoluminescence in SiGe quantum wells and superlattices
|
Kim, J.Y.
|
|
1995
|
157 |
1-4 |
p. 40-44
5 p.
|
artikel
|
| 21 |
Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties
|
Zotov, A.V.
|
|
1995
|
157 |
1-4 |
p. 344-348
5 p.
|
artikel
|
| 22 |
Ge+ ion implantation — a competing technology?
|
Hemment, P.L.F.
|
|
1995
|
157 |
1-4 |
p. 147-160
14 p.
|
artikel
|
| 23 |
Growth of low-dimensional structures on nonplanar patterned substrates
|
Hobart, Karl D.
|
|
1995
|
157 |
1-4 |
p. 338-343
6 p.
|
artikel
|
| 24 |
High speed SiGe heterobipolar transistors
|
Schüppen, Andreas
|
|
1995
|
157 |
1-4 |
p. 207-214
8 p.
|
artikel
|
| 25 |
Hole confinement in boron δ-doped Si quantum wells studied by admittance spectroscopy
|
Zhu, Jian-hong
|
|
1995
|
157 |
1-4 |
p. 378-381
4 p.
|
artikel
|
| 26 |
Improvement of the morphological quality of the Si surface using an optimised in-situ oxide removal procedure prior to MBE growth
|
Hansen, J.Lundsgaard
|
|
1995
|
157 |
1-4 |
p. 317-322
6 p.
|
artikel
|
| 27 |
Incorporation kinetics of rare earth impurities in Si during molecular beam epitaxy
|
Miyashita, K.
|
|
1995
|
157 |
1-4 |
p. 333-337
5 p.
|
artikel
|
| 28 |
Influence of base dopant out-diffusion into the emitter in Si SiGe heterojunction bipolar transistor using Monte Carlo simulations
|
Galdin, Sylvie
|
|
1995
|
157 |
1-4 |
p. 231-235
5 p.
|
artikel
|
| 29 |
Influence of self-assembling growth on the shape and the orientation of silicon nanostructures
|
Gossner, H.
|
|
1995
|
157 |
1-4 |
p. 308-311
4 p.
|
artikel
|
| 30 |
Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations
|
Zeindl, H.P.
|
|
1995
|
157 |
1-4 |
p. 31-35
5 p.
|
artikel
|
| 31 |
In situ real-time temperature and thickness measurement for Si SiGe growth on MBE and RTCVD systems
|
Möller, H.
|
|
1995
|
157 |
1-4 |
p. 327-332
6 p.
|
artikel
|
| 32 |
In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD
|
Nayak, S.
|
|
1995
|
157 |
1-4 |
p. 168-171
4 p.
|
artikel
|
| 33 |
Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure
|
Usami, N.
|
|
1995
|
157 |
1-4 |
p. 27-30
4 p.
|
artikel
|
| 34 |
Interface morphology and relaxation in high temperature grown Si 1 − x Ge x Si superlattices
|
Baribeau, J.-M.
|
|
1995
|
157 |
1-4 |
p. 52-56
5 p.
|
artikel
|
| 35 |
Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing
|
Curello, G.
|
|
1995
|
157 |
1-4 |
p. 236-241
6 p.
|
artikel
|
| 36 |
Investigation of Si-substrate preparation for GaAs-on-Si MBE growth
|
Kayambaki, M.
|
|
1995
|
157 |
1-4 |
p. 300-303
4 p.
|
artikel
|
| 37 |
Islands formation conditions in silicon-germanium alloys grown by MBE
|
Murri, R.
|
|
1995
|
157 |
1-4 |
p. 255-259
5 p.
|
artikel
|
| 38 |
Local epitaxy of Si/SiGe wires and dots
|
Brunner, J.
|
|
1995
|
157 |
1-4 |
p. 270-275
6 p.
|
artikel
|
| 39 |
Magnetotransport of epitaxial Si Ge layers on Si
|
Koschinski, W.
|
|
1995
|
157 |
1-4 |
p. 85-89
5 p.
|
artikel
|
| 40 |
Magnetron sputter epitaxy of Si Ge heterostructures
|
Sutter, P.
|
|
1995
|
157 |
1-4 |
p. 172-176
5 p.
|
artikel
|
| 41 |
MBE growth of ternary SnGeSiGe superlattices
|
Dondl, W.
|
|
1995
|
157 |
1-4 |
p. 400-404
5 p.
|
artikel
|
| 42 |
Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique
|
Hall, S.
|
|
1995
|
157 |
1-4 |
p. 90-95
6 p.
|
artikel
|
| 43 |
Modeling of facet growth on patterned Si substrate in gas source MBE
|
Li, Shaozhong
|
|
1995
|
157 |
1-4 |
p. 185-189
5 p.
|
artikel
|
| 44 |
Molecular beam epitaxial grown Si1 − x C x layers on Si(001) as a substrate for MWCVD of diamond
|
Gutheit, T.
|
|
1995
|
157 |
1-4 |
p. 426-430
5 p.
|
artikel
|
| 45 |
Observation of piezoelectric-like behaviour in coherently strained B-doped (100)SiGe Si heterostructures
|
Mironov, O.A.
|
|
1995
|
157 |
1-4 |
p. 382-385
4 p.
|
artikel
|
| 46 |
Optical and electronic properties of SiGeC alloys grown on Si substrates
|
Kolodzey, J.
|
|
1995
|
157 |
1-4 |
p. 386-391
6 p.
|
artikel
|
| 47 |
Optical properties of bulk and multi-quantum well SiGe: C heterostructures
|
Boucaud, P.
|
|
1995
|
157 |
1-4 |
p. 410-413
4 p.
|
artikel
|
| 48 |
Optimisation and stability of optical spectra of novel SiGe quantum well structures in an external electric field
|
Jaros, M.
|
|
1995
|
157 |
1-4 |
p. 11-14
4 p.
|
artikel
|
| 49 |
Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source
|
Lippert, G.
|
|
1995
|
157 |
1-4 |
p. 304-307
4 p.
|
artikel
|
| 50 |
Photo-induced intersubband absorption in Si SiGe quantum wells
|
Boucaud, P.
|
|
1995
|
157 |
1-4 |
p. 227-230
4 p.
|
artikel
|
| 51 |
Photoluminescence and Raman spectroscopy of Si Si 1 − x Ge x quantum dots
|
Tang, Y.S.
|
|
1995
|
157 |
1-4 |
p. 280-284
5 p.
|
artikel
|
| 52 |
Photoluminescence characterization of Si−x Ge x relaxed “pseudo-substrates” grown on Si
|
Bremond, G.
|
|
1995
|
157 |
1-4 |
p. 116-120
5 p.
|
artikel
|
| 53 |
Photoluminescence investigation on growth mode changeover of Ge on Si(100)
|
Sunamura, H.
|
|
1995
|
157 |
1-4 |
p. 265-269
5 p.
|
artikel
|
| 54 |
Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing
|
Lafontaine, H.
|
|
1995
|
157 |
1-4 |
p. 57-60
4 p.
|
artikel
|
| 55 |
Plasma-enhanced evaporation of SiO2 films for MBE-grown MOS devices
|
Neubecker, Alexandra
|
|
1995
|
157 |
1-4 |
p. 201-206
6 p.
|
artikel
|
| 56 |
Preface
|
Kasper, E.
|
|
1995
|
157 |
1-4 |
p. ix-
1 p.
|
artikel
|
| 57 |
Quantitative analysis of light emission from SiGe quantum wells
|
Fukatsu, S.
|
|
1995
|
157 |
1-4 |
p. 1-10
10 p.
|
artikel
|
| 58 |
Radiative recombination processes in p-type modulation-doped SiGe quantum wells and Si epilayers
|
Buyanova, I.A.
|
|
1995
|
157 |
1-4 |
p. 362-366
5 p.
|
artikel
|
| 59 |
Realization of Si 1−x−y Ge x C y Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)
|
Boulmer, J.
|
|
1995
|
157 |
1-4 |
p. 436-441
6 p.
|
artikel
|
| 60 |
Relaxation of compositionally graded Si1 − x Ge x buffers: a TEM study
|
Hohnisch, M.
|
|
1995
|
157 |
1-4 |
p. 126-131
6 p.
|
artikel
|
| 61 |
Relaxed Si1−x Ge x films with reduced dislocation densities grown by molecular beam epitaxy
|
Tanner, Martin O.
|
|
1995
|
157 |
1-4 |
p. 121-125
5 p.
|
artikel
|
| 62 |
Room-temperature luminescence from Si Ge single quantum well diodes grown by molecular beam epitaxy
|
Presting, H.
|
|
1995
|
157 |
1-4 |
p. 15-20
6 p.
|
artikel
|
| 63 |
Roughening of SiGe layers grown with gas-source MBE: dependence on Ge concentration and growth temperature
|
Storm, A.B.
|
|
1995
|
157 |
1-4 |
p. 312-316
5 p.
|
artikel
|
| 64 |
Segregation of interface carbon during silicon epitaxial growth by UHV-CVD
|
Aoyama, Tohru
|
|
1995
|
157 |
1-4 |
p. 323-326
4 p.
|
artikel
|
| 65 |
Self-organized MBE growth of Ge-rich SiGe dots on Si(100)
|
Schittenhelm, P.
|
|
1995
|
157 |
1-4 |
p. 260-264
5 p.
|
artikel
|
| 66 |
Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth
|
Chollet, F.
|
|
1995
|
157 |
1-4 |
p. 161-167
7 p.
|
artikel
|
| 67 |
Silicon molecular beam epitaxial growth on ultra-small mesa structures
|
Avrutin, V.S.
|
|
1995
|
157 |
1-4 |
p. 276-279
4 p.
|
artikel
|
| 68 |
Silicon nanostructure devices
|
Eisele, I.
|
|
1995
|
157 |
1-4 |
p. 248-254
7 p.
|
artikel
|
| 69 |
Si Si 1−x Ge x heterojunction bipolar transistors for microwave power applications
|
Hobart, K.D.
|
|
1995
|
157 |
1-4 |
p. 215-221
7 p.
|
artikel
|
| 70 |
Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system
|
Ni, W.-X.
|
|
1995
|
157 |
1-4 |
p. 242-247
6 p.
|
artikel
|
| 71 |
Spectroscopic ellipsometry for Si(1 − x)Ge x characterization: comparison with other experimental techniques
|
Boher, Pierre
|
|
1995
|
157 |
1-4 |
p. 73-79
7 p.
|
artikel
|
| 72 |
Strain compensation in ternary Si1 − x − y Ge xBy films
|
Tillack, B.
|
|
1995
|
157 |
1-4 |
p. 181-184
4 p.
|
artikel
|
| 73 |
Strain relaxation and misfit dislocations in compositionally graded Si1 − x Ge x layers on Si(001)
|
Li, J.H.
|
|
1995
|
157 |
1-4 |
p. 137-141
5 p.
|
artikel
|
| 74 |
Strain-stabilized structures on silicon grown with MBE
|
Osten, H.J.
|
|
1995
|
157 |
1-4 |
p. 405-409
5 p.
|
artikel
|
| 75 |
Subject index
|
|
|
1995
|
157 |
1-4 |
p. 449-450
2 p.
|
artikel
|
| 76 |
Synthesis of epitaxial Si1 − y C y alloys on Si(001) with high level of non-usual substitutional carbon incorporation
|
Diani, M.
|
|
1995
|
157 |
1-4 |
p. 431-435
5 p.
|
artikel
|
| 77 |
Test of Vegard's law in thin epitaxial SiGe layers
|
Kasper, E.
|
|
1995
|
157 |
1-4 |
p. 68-72
5 p.
|
artikel
|
| 78 |
The growth and characterization of Si1 − x Ge x multiple quantum wells on Si(110) and Si(111)
|
Thompson, P.E.
|
|
1995
|
157 |
1-4 |
p. 21-26
6 p.
|
artikel
|
| 79 |
Theory of electronic and optical properties of Si Ge superlattices
|
Theodorou, G.
|
|
1995
|
157 |
1-4 |
p. 45-51
7 p.
|
artikel
|
| 80 |
Thermal stability of Si/Si1 − x − y Ge xCy/Si heterostructures grown by rapid thermal chemical vapor deposition
|
Warren, Patricia
|
|
1995
|
157 |
1-4 |
p. 414-419
6 p.
|
artikel
|
| 81 |
The role of strain in silicon-based molecular beam epitaxy
|
Xie, Ya-Hong
|
|
1995
|
157 |
1-4 |
p. 113-115
3 p.
|
artikel
|
| 82 |
Thickness measurements of Si1 − x Ge x thin layers deposited on Si mesa structures
|
Wasserman, A.
|
|
1995
|
157 |
1-4 |
p. 96-99
4 p.
|
artikel
|
| 83 |
Tunable infrared photoemission sensor on silicon using SiGe Si epitaxial heterostructures
|
Renard, C.
|
|
1995
|
157 |
1-4 |
p. 195-200
6 p.
|
artikel
|
| 84 |
Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications
|
Whall, T.E.
|
|
1995
|
157 |
1-4 |
p. 353-361
9 p.
|
artikel
|
| 85 |
X-ray reciprocal space mapping of Si Si 1−x Ge x heterostructures
|
Bauer, Günther
|
|
1995
|
157 |
1-4 |
p. 61-67
7 p.
|
artikel
|
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