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Journal description
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Details for article 28 of 85 found articles
| Title: |
Influence of base dopant out-diffusion into the emitter in Si SiGe heterojunction bipolar transistor using Monte Carlo simulations |
| Author: |
Galdin, Sylvie Dollfus, Philippe Mouis, Mireille Meyer, Françoise Hesto, Patrice |
| Appeared in: |
Journal of crystal growth |
| Paging: | Volume 157 (1995) nr. 1-4 pages 5 p. |
| Year: |
1995 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 28 of 85 found articles
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