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                                       Details for article 18 of 85 found articles
 
 
  Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy
 
 
Title: Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy
Author: Matsumura, A.
Thornton, T.J.
Fernández, J.M.
Holmes, S.N.
Zhang, J.
Joyce, B.A.
Appeared in: Journal of crystal growth
Paging: Volume 157 (1995) nr. 1-4 pages 5 p.
Year: 1995
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 18 of 85 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands