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Corrigendum to “Write once read many times resistance switching memory based on allinorganic perovskite CsPbBr3 quantum dot” |
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Titel: |
Corrigendum to “Write once read many times resistance switching memory based on allinorganic perovskite CsPbBr3 quantum dot” |
Auteur: |
Chen, Zhiliang Zhang, Yating Yu, Yu Che, Yongli Jin, Lufan Li, Yifan Li, Qingyan Li, Tengteng Dai, Haitao Yao, Jianquan |
Verschenen in: |
Optical materials |
Paginering: |
Jaargang 112 () nr. C pagina's p. |
Jaar: |
2021 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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