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Journal description
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Details for article 14 of 93 found articles
| Title: |
Corrigendum to “Write once read many times resistance switching memory based on allinorganic perovskite CsPbBr3 quantum dot” |
| Author: |
Chen, Zhiliang Zhang, Yating Yu, Yu Che, Yongli Jin, Lufan Li, Yifan Li, Qingyan Li, Tengteng Dai, Haitao Yao, Jianquan |
| Appeared in: |
Optical materials |
| Paging: | Volume 112 () nr. C pages p. |
| Year: |
2021 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 93 found articles
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