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                                       Details for article 46 of 55 found articles
 
 
  Single Event Upset rate determination for 65nm SRAM bit-cell in LEO radiation environments
 
 
Title: Single Event Upset rate determination for 65nm SRAM bit-cell in LEO radiation environments
Author: Sajid, Muhammad
Chechenin, N.G.
Torres, Frank Sill
Gulzari, Usman Ali
Butt, Muhammad Usman
Ming, Zhu
Khan, E.U.
Appeared in: Microelectronics reliability
Paging: Volume 78 (2017) nr. C pages 6 p.
Year: 2017
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 46 of 55 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands