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Journal description
All volumes of the corresponding journal
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All articles of the corresponding issues
Details for article 20 of 24 found articles
| Title: |
Relative effectiveness of high-k passivation and gate-connected field plate techniques in enhancing GaN HEMT breakdown |
| Author: |
Prasannanjaneyulu, Bhavana Karmalkar, Shreepad |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 110 () nr. C pages p. |
| Year: |
2020 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 20 of 24 found articles
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