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                                       Details for article 19 of 24 found articles
 
 
  Recovery investigation of NBTI-induced traps in n-MOSFET devices
 
 
Title: Recovery investigation of NBTI-induced traps in n-MOSFET devices
Author: Djezzar, Boualem
Benabdelmoumene, Abdelmadjid
Zatout, Boumediene
Messaoud, Dhiaelhak
Chenouf, Amel
Tahi, Hakim
Boubaaya, Mohamed
Timlelt, Hakima
Appeared in: Microelectronics reliability
Paging: Volume 110 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 19 of 24 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands