| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices
|
M. I. Gorlov
|
|
2002
|
31 |
5 |
p. 295-304
10 p.
|
article
|
| 2 |
Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices
|
Gorlov, M. I.
|
|
2002
|
31 |
5 |
p. 295-304
|
article
|
| 3 |
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction
|
E. M. Pashaev
|
|
2002
|
31 |
5 |
p. 310-317
8 p.
|
article
|
| 4 |
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction
|
Pashaev, E. M.
|
|
2002
|
31 |
5 |
p. 310-317
|
article
|
| 5 |
Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds
|
E. I. Cherepov
|
|
2002
|
31 |
5 |
p. 277-281
5 p.
|
article
|
| 6 |
Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds
|
Cherepov, E. I.
|
|
2002
|
31 |
5 |
p. 277-281
|
article
|
| 7 |
Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics
|
V. A. Goryachev
|
|
2002
|
31 |
5 |
p. 326-334
9 p.
|
article
|
| 8 |
Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics
|
Goryachev, V. A.
|
|
2002
|
31 |
5 |
p. 326-334
|
article
|
| 9 |
Instability Conditions of the Stationary Nonconducting State for the Bispin
|
A. P. Lysenko
|
|
2002
|
31 |
5 |
p. 335-339
5 p.
|
article
|
| 10 |
Instability Conditions of the Stationary Nonconducting State for the Bispin
|
Lysenko, A. P.
|
|
2002
|
31 |
5 |
p. 335-339
|
article
|
| 11 |
Isotropic Plasma Etching of SiO2 Films
|
A. A. Kovalevskii
|
|
2002
|
31 |
5 |
p. 290-294
5 p.
|
article
|
| 12 |
Isotropic Plasma Etching of SiO2 Films
|
Kovalevskii, A. A.
|
|
2002
|
31 |
5 |
p. 290-294
|
article
|
| 13 |
MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device
|
E. V. Chernyavskii
|
|
2002
|
31 |
5 |
p. 318-322
5 p.
|
article
|
| 14 |
MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device
|
Chernyavskii, E. V.
|
|
2002
|
31 |
5 |
p. 318-322
|
article
|
| 15 |
Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films
|
V. G. Erkov
|
|
2002
|
31 |
5 |
p. 282-289
8 p.
|
article
|
| 16 |
Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films
|
Erkov, V. G.
|
|
2002
|
31 |
5 |
p. 282-289
|
article
|
| 17 |
Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities
|
F. F. Komarov
|
|
2002
|
31 |
5 |
p. 305-309
5 p.
|
article
|
| 18 |
Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities
|
Komarov, F. F.
|
|
2002
|
31 |
5 |
p. 305-309
|
article
|
| 19 |
Trench-Gate MOS-Controlled Thyristor: An Evaluation
|
E. V. Chernyavskii
|
|
2002
|
31 |
5 |
p. 323-325
3 p.
|
article
|
| 20 |
Trench-Gate MOS-Controlled Thyristor: An Evaluation
|
Chernyavskii, E. V.
|
|
2002
|
31 |
5 |
p. 323-325
|
article
|
| 21 |
X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 xZnxTe
|
E. M. Pashaev
|
|
2002
|
31 |
5 |
p. 271-276
6 p.
|
article
|
| 22 |
X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 – xZnxTe
|
Pashaev, E. M.
|
|
2002
|
31 |
5 |
p. 271-276
|
article
|
Journal description