| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adaptive equalizer with a controller of a minimally admissible differential voltage of the output signal and pseudodifferential cascode output buffer for the 10-Gb/s transmitter according to the 65-nm CMOS technology
|
Larionov, A. V.
|
|
2015
|
|
6 |
p. 414-420
|
artikel
|
| 2 |
A functionally integrated injection laser-modulator with the radiation frequency modulation
|
Ryndin, E. A.
|
|
2013
|
|
6 |
p. 360-362
|
artikel
|
| 3 |
A Helicon Plasma Source
|
O. V. Braginskii
|
|
2000
|
|
6 |
p. 380-390
11 p.
|
artikel
|
| 4 |
A Helicon Plasma Source
|
Braginskii, O. V.
|
|
2000
|
|
6 |
p. 380-390
|
artikel
|
| 5 |
Amorphization of Vanadium Oxides during the Reversible Insertion of Lithium
|
Skundin, A. M.
|
|
|
|
6 |
p. 416-422
|
artikel
|
| 6 |
Analyzing conductance-frequency curves of metal-insulator-semiconductor structures subject to surface-potential fluctuations and electrically active states inside the insulator
|
Avdeev, N. A.
|
|
2007
|
|
6 |
p. 402-408
|
artikel
|
| 7 |
Anodic-Oxidation Growth of Microscopic Pillar Arrays: Kinetic Aspects
|
A. I. Vorob'eva
|
|
2001
|
|
6 |
p. 381-393
13 p.
|
artikel
|
| 8 |
Anodic-Oxidation Growth of Microscopic Pillar Arrays: Kinetic Aspects
|
Vorob'eva, A. I.
|
|
2001
|
|
6 |
p. 381-393
|
artikel
|
| 9 |
Anomalous Kossel effect in semiconductor structures
|
Medvedev, P. G.
|
|
2006
|
|
6 |
p. 359-371
|
artikel
|
| 10 |
Anomalous photoconductivity decay observed in microwave measurements of carrier lifetime in silicon ingots
|
Borodovskii, P. A.
|
|
2006
|
|
6 |
p. 345-349
|
artikel
|
| 11 |
Application of Graphene in The Cooling System of a Personal Electronic Computer
|
Zuev, S. M.
|
|
|
|
6 |
p. 404-411
|
artikel
|
| 12 |
Artificial Intelligence Will Never Completely Replace Humans
|
Abramov, I. I.
|
|
|
|
6 |
p. 376-386
|
artikel
|
| 13 |
A semianalytical model of a thin-channel field-effect transistor
|
Khomyakov, A. N.
|
|
2009
|
|
6 |
p. 393-405
|
artikel
|
| 14 |
Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system
|
Trushin, O. S.
|
|
2015
|
|
6 |
p. 410-413
|
artikel
|
| 15 |
A virtual scanning electron microscope. 4. Simulator-based implementation
|
Novikov, Yu. A.
|
|
2014
|
|
6 |
p. 427-437
|
artikel
|
| 16 |
Axially symmetric composite electromagnetic mirror for perfect axial-aberration correction
|
Shukov, V. A.
|
|
2006
|
|
6 |
p. 372-381
|
artikel
|
| 17 |
Basic memory elements using DICE cells for fault-tolerant 28 nm CMOS RAM
|
Stenin, V. Ya.
|
|
2015
|
|
6 |
p. 368-379
|
artikel
|
| 18 |
Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
|
Safaraliev, G. K.
|
|
2015
|
|
6 |
p. 404-409
|
artikel
|
| 19 |
Chaotic Negative-Resistance Oscillators with a Multibranch Piecewise-Linear CurrentVoltage Characteristic
|
V. G. Prokopenko
|
|
2004
|
|
6 |
p. 381-389
9 p.
|
artikel
|
| 20 |
Chaotic Negative-Resistance Oscillators with a Multibranch Piecewise-Linear Current—Voltage Characteristic
|
Prokopenko, V. G.
|
|
2004
|
|
6 |
p. 381-389
|
artikel
|
| 21 |
Characterization of the structure and optical properties of micron porous layers on antimony-doped silicon substrates
|
Lomov, A. A.
|
|
2012
|
|
6 |
p. 336-346
|
artikel
|
| 22 |
CMOS Majority Element Based on NAND Logic with Reduced Sensitivity to Single Ionizing Particles
|
Stenin, V. Ya.
|
|
|
|
6 |
p. 394-403
|
artikel
|
| 23 |
CMOS Switched-Capacitor Integrator
|
Yu. B. Rogatkin
|
|
2003
|
|
6 |
p. 333-338
6 p.
|
artikel
|
| 24 |
CMOS Switched-Capacitor Integrator
|
Rogatkin, Yu. B.
|
|
2003
|
|
6 |
p. 333-338
|
artikel
|
| 25 |
Computer Analysis of Resistive Switching in a Bismuth Selenide Microcrystal-Based Structure
|
Sirotkin, V. V.
|
|
|
|
6 |
p. 445-453
|
artikel
|
| 26 |
Concentration Dependences of Charge Transfer and the Kinetics of Monte Carlo Modeling of the Growth of 2D Mono- and Nanocrystals of Gallium Chalcogenides
|
Asadov, S. M.
|
|
|
|
6 |
p. 452-462
|
artikel
|
| 27 |
Constructivist treatment of Bell’s inequality violations and the no-hidden-variable theorems
|
Ozhigov, Y. I.
|
|
2009
|
|
6 |
p. 409-417
|
artikel
|
| 28 |
Contact Transport and Field Emission Properties of Low-Dimensional 2D Carbon Heterostructures
|
Yafarov, R. K.
|
|
|
|
6 |
p. 439-444
|
artikel
|
| 29 |
Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber
|
Rodyakina, E. E.
|
|
2018
|
|
6 |
p. 365-370
|
artikel
|
| 30 |
Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures
|
Rudakov, V. I.
|
|
2011
|
|
6 |
p. 389-394
|
artikel
|
| 31 |
Creation of lithographic masks using a scanning probe microscope
|
Bizyaev, D. A.
|
|
2015
|
|
6 |
p. 389-398
|
artikel
|
| 32 |
Critical Velocities of Domain Walls in Magnetic Thin Films with Planar Anisotropy
|
B. N. Filippov
|
|
2001
|
|
6 |
p. 406-410
5 p.
|
artikel
|
| 33 |
Critical Velocities of Domain Walls in Magnetic Thin Films with Planar Anisotropy
|
Filippov, B. N.
|
|
2001
|
|
6 |
p. 406-410
|
artikel
|
| 34 |
CVC Simulation of Ultrathin Soi-Cmos Nanotransistors with a Fully Enclosed Gate
|
Masalsky, N. V.
|
|
|
|
6 |
p. 387-393
|
artikel
|
| 35 |
DC/DC Buck-Boost Converter with Single Inductance
|
Babenko, V. P.
|
|
|
|
6 |
p. 471-480
|
artikel
|
| 36 |
Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless Lithography
|
V. A. Zhukov
|
|
2004
|
|
6 |
p. 362-372
11 p.
|
artikel
|
| 37 |
Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless Lithography
|
Zhukov, V. A.
|
|
2004
|
|
6 |
p. 362-372
|
artikel
|
| 38 |
Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment
|
Parchinskii, P. B.
|
|
2005
|
|
6 |
p. 356-358
|
artikel
|
| 39 |
Design and Evaluation of Low Power CMOS Based Schmitt Trigger Circuits
|
Nagella Maniteja,
|
|
|
|
6 |
p. 556-564
|
artikel
|
| 40 |
Designing FPGAs and Reconfigurable SoCs Using Methods of Program Analysis and Prototyping
|
Enns, V. I.
|
|
|
|
6 |
p. 426-438
|
artikel
|
| 41 |
Design of Cu-MWCNT Based Heterogeneous Coaxial through Silicon Vias for High-Speed VLSI Applications
|
Rajkumar, Katepogu
|
|
|
|
6 |
p. 512-520
|
artikel
|
| 42 |
Design of Integrated Voltage Multipliers Using Standard CMOS Technologies
|
Sinyukin, A. S.
|
|
|
|
6 |
p. 527-534
|
artikel
|
| 43 |
Design-processing features of microwave GaAs monolithic integrated circuits of a low-noise amplifier with a copper metallized frontside
|
Ishutkin, S. V.
|
|
2015
|
|
6 |
p. 380-388
|
artikel
|
| 44 |
Determination of the size of vacancy-type defects in angstrom ranges by positron annihilation spectroscopy
|
Grafutin, V. I.
|
|
2011
|
|
6 |
p. 428-435
|
artikel
|
| 45 |
Development of a Method for Constructing a Nonlinear Model of a Metamorphic 0.15-μm МHEMT InAlAs/InGaAs Transistor
|
Lokotko, V. V.
|
|
|
|
6 |
p. 404-412
|
artikel
|
| 46 |
Development of crystal matrix of tensoresistive pressure tactile transducers for robotics
|
Gusev, D. V.
|
|
2015
|
|
6 |
p. 421-424
|
artikel
|
| 47 |
Development of the Technology of Magnetron Sputtering Deposition of LiPON Films and Investigation of Their Characteristics
|
Vasilev, S. V.
|
|
2017
|
|
6 |
p. 424-432
|
artikel
|
| 48 |
Device and process simulation of SOS and SOI MOSFETs
|
Kroupkina, T. Yu.
|
|
2005
|
|
6 |
p. 386-396
|
artikel
|
| 49 |
1D GaAs Detector Arrays for Digital X-ray Imaging
|
V. F. Dvoryankin
|
|
2004
|
|
6 |
p. 373-376
4 p.
|
artikel
|
| 50 |
1D GaAs Detector Arrays for Digital X-ray Imaging
|
Dvoryankin, V. F.
|
|
2004
|
|
6 |
p. 373-376
|
artikel
|
| 51 |
Dielectric Barrier in the Subtractive Process of Formation of a Copper Metallization System
|
Orlov, A. A.
|
|
|
|
6 |
p. 470-479
|
artikel
|
| 52 |
Digital-Reflectometry Characterization of the Surface Structure and Protective Property of Thin Films
|
V. A. Kotenev
|
|
2002
|
|
6 |
p. 396-406
11 p.
|
artikel
|
| 53 |
Digital-Reflectometry Characterization of the Surface Structure and Protective Property of Thin Films
|
Kotenev, V. A.
|
|
2002
|
|
6 |
p. 396-406
|
artikel
|
| 54 |
Dual-Collector Lateral Bipolar Magnetotransistor: Carrier Transport and Relative Sensitivity
|
A. V. Kozlov
|
|
2003
|
|
6 |
p. 385-390
6 p.
|
artikel
|
| 55 |
Dual-Collector Lateral Bipolar Magnetotransistor: Carrier Transport and Relative Sensitivity
|
Kozlov, A. V.
|
|
2003
|
|
6 |
p. 385-390
|
artikel
|
| 56 |
Dynamics of Stress in Films of Metals on Silicon During Vacuum Heat Treatment
|
Dzhuplin, V. N.
|
|
|
|
6 |
p. 412-419
|
artikel
|
| 57 |
Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation
|
Borzdov, A. V.
|
|
2010
|
|
6 |
p. 411-417
|
artikel
|
| 58 |
Effect of Ion-Plasma Treatment on the Phase Composition and Electrical Resistivity of Nanometer-Thick Tungsten Films
|
Selyukov, R. V.
|
|
|
|
6 |
p. 488-496
|
artikel
|
| 59 |
Effect of Lattice Defects on the Electromigration-Induced Instability of the Interface between Joined Conductive Materials
|
Makhviladze, T. M.
|
|
|
|
6 |
p. 426-434
|
artikel
|
| 60 |
Effect of Point Defects on the Electromigration Rate at the Interface of Joined Materials
|
Makhviladze, T. M.
|
|
|
|
6 |
p. 423-430
|
artikel
|
| 61 |
Effect of polymer matrix and photoacid generator on the lithographic properties of chemically amplified photoresist
|
Bulgakova, S. A.
|
|
2014
|
|
6 |
p. 392-400
|
artikel
|
| 62 |
Effect of the Measuring Signal Parameters on the Error in Capacitance Measurements of a p-n Transition and Determining Its Resistance to Radiation
|
Zabavichev, I. Yu.
|
|
2017
|
|
6 |
p. 433-441
|
artikel
|
| 63 |
Elastically Strained Porous Silicon Layers Formed on Single-Crystal Substrates
|
V. D. Skupov
|
|
2003
|
|
6 |
p. 382-384
3 p.
|
artikel
|
| 64 |
Elastically Strained Porous Silicon Layers Formed on Single-Crystal Substrates
|
Skupov, V. D.
|
|
2003
|
|
6 |
p. 382-384
|
artikel
|
| 65 |
Elastic-stress relaxation in heteroepitaxial structures investigated by computer simulation
|
Trushin, O. S.
|
|
2008
|
|
6 |
p. 363-372
|
artikel
|
| 66 |
Electrical parameters and the plasma composition in HCl-H2 mixtures
|
Efremov, A. M.
|
|
2011
|
|
6 |
p. 371-378
|
artikel
|
| 67 |
Electrical properties of a TiN/TixAl1 – xOy/TiN memristor device manufactured by magnetron sputtering
|
Bobylev, A. N.
|
|
2016
|
|
6 |
p. 396-401
|
artikel
|
| 68 |
Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures
|
V. Ya. Uritskii
|
|
2000
|
|
6 |
p. 417-422
6 p.
|
artikel
|
| 69 |
Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures
|
Uritskii, V. Ya.
|
|
2000
|
|
6 |
p. 417-422
|
artikel
|
| 70 |
Electroluminescence in p-GaP/por-GaP/SnO2 Structures in the Red Region of the Spectrum
|
Dikhanbaev, K. K.
|
|
|
|
6 |
p. 465-469
|
artikel
|
| 71 |
Electromagnetic Modeling, Technology, and Production of Microwave C3MOSHFET Switches on AlGaN/GaN Heterostructures
|
Adonin, A. S.
|
|
2017
|
|
6 |
p. 390-395
|
artikel
|
| 72 |
Electron Detection Circuit Based on a Tunnel Structure of Four Quantum Dots with Asymmetric Parameters
|
Tsukanov, A. V.
|
|
|
|
6 |
p. 387-397
|
artikel
|
| 73 |
Electronic Structure of Molecular Switches on Splitters Based on trans-Polyacetylene
|
Gorbatsevich, A. A.
|
|
2017
|
|
6 |
p. 414-423
|
artikel
|
| 74 |
Electrophysical Characteristics and Emission Spectra of Carbon Tetrafluoride Plasma
|
Murin, D. B.
|
|
|
|
6 |
p. 368-375
|
artikel
|
| 75 |
Electrophysical Parameters of PIN Photodiodes Irradiated with 60Co γ-Quanta
|
Kovalchuk, N. S.
|
|
|
|
6 |
p. 504-509
|
artikel
|
| 76 |
Electrophysical properties of lead zirconate titanate films doped with lanthanum
|
Podgornyi, Yu. V.
|
|
2014
|
|
6 |
p. 438-444
|
artikel
|
| 77 |
Equivalent electrical network of the DNA molecule
|
Grib, N. V.
|
|
2006
|
|
6 |
p. 398-404
|
artikel
|
| 78 |
Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor
|
Tsunvaza, D.
|
|
|
|
6 |
p. 566
|
artikel
|
| 79 |
Erratum to: Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data
|
Serov, D. A.
|
|
|
|
6 |
p. 565
|
artikel
|
| 80 |
ESR spectra of the triplet and singlet states of a Zn-P two-spin system in Si: Mathematical modeling and computer simulation
|
Dobryakov, S. N.
|
|
2005
|
|
6 |
p. 373-382
|
artikel
|
| 81 |
Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl2F2/Ar) Mixture
|
Murin, D. B.
|
|
2019
|
|
6 |
p. 434-442
|
artikel
|
| 82 |
Etching of SiC in Low Power Inductively-Coupled Plasma
|
Osipov, A. A.
|
|
2019
|
|
6 |
p. 427-433
|
artikel
|
| 83 |
Evaluating the reading sensitivity of a new thermomechanical data-storage technique
|
Petrin, A. B.
|
|
2005
|
|
6 |
p. 365-372
|
artikel
|
| 84 |
Evaluation of Si-Wafer Chemical Cleaning Procedures in Terms of Their Effect on Wafer Topography
|
S. P. Timoshenkov
|
|
2003
|
|
6 |
p. 371-376
6 p.
|
artikel
|
| 85 |
Evaluation of Si-Wafer Chemical Cleaning Procedures in Terms of Their Effect on Wafer Topography
|
Timoshenkov, S. P.
|
|
2003
|
|
6 |
p. 371-376
|
artikel
|
| 86 |
Experimental diamond photonics: Current state and prospects. Part II
|
Tsukanov, A. V.
|
|
2016
|
|
6 |
p. 367-382
|
artikel
|
| 87 |
Fault Tolerant Reversible T Latch with Enhanced Testability at Nano-Scale for Application of Ripple Counters
|
Singh, Pankaj
|
|
|
|
6 |
p. 439-451
|
artikel
|
| 88 |
Formation and some properties of chromium oxide nanolayers on semiconductors
|
Ezhovskii, Yu. K.
|
|
2008
|
|
6 |
p. 356-362
|
artikel
|
| 89 |
Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering
|
Rudakov, V. I.
|
|
2011
|
|
6 |
p. 383-388
|
artikel
|
| 90 |
Fractal Analysis of Anisotropic Surfaces
|
P. A. Arutyunov
|
|
2001
|
|
6 |
p. 411-413
3 p.
|
artikel
|
| 91 |
Fractal Analysis of Anisotropic Surfaces
|
Arutyunov, P. A.
|
|
2001
|
|
6 |
p. 411-413
|
artikel
|
| 92 |
Fully depleted SOI CMOS logic gates for low-voltage applications
|
Masal’skii, N. V.
|
|
2008
|
|
6 |
p. 410-417
|
artikel
|
| 93 |
Geometric aspects of AFM imaging
|
Novikov, Yu. A.
|
|
2008
|
|
6 |
p. 390-409
|
artikel
|
| 94 |
Happy 85th Anniversary!
|
|
|
2009
|
|
6 |
p. 363
|
artikel
|
| 95 |
Helicon Plasma Source
|
O. V. Braginskii
|
|
2002
|
|
6 |
p. 341-345
5 p.
|
artikel
|
| 96 |
Helicon Plasma Source
|
Braginskii, O. V.
|
|
2002
|
|
6 |
p. 341-345
|
artikel
|
| 97 |
High-frequency admittance of a thin circular metal wire
|
Zavitaev, E. V.
|
|
2008
|
|
6 |
p. 373-381
|
artikel
|
| 98 |
Highly doped Si/SiO2/W sandwich structures with an exposed insulator edge: Electrical transport and electroforming
|
Mordvintsev, V. M.
|
|
2007
|
|
6 |
p. 371-383
|
artikel
|
| 99 |
High-Rate Deposition of Amorphous Silicon
|
B. G. Budagyan
|
|
2000
|
|
6 |
p. 391-396
6 p.
|
artikel
|
| 100 |
High-Rate Deposition of Amorphous Silicon
|
Budagyan, B. G.
|
|
2000
|
|
6 |
p. 391-396
|
artikel
|
| 101 |
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic CurrentVoltage Characteristics of Ion Depolarization
|
E. I. Gol'dman
|
|
2000
|
|
6 |
p. 406-412
7 p.
|
artikel
|
| 102 |
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic Current–Voltage Characteristics of Ion Depolarization
|
Gol'dman, E. I.
|
|
2000
|
|
6 |
p. 406-412
|
artikel
|
| 103 |
Implementation of an LNA Using a Microstrip Coupler as a DC-Block for Sub-6 5G Communication Systems
|
Mohamed Boumalkha,
|
|
|
|
6 |
p. 547-555
|
artikel
|
| 104 |
Influence of external conditions on physical processes and plasma parameters in a model of a high-frequency hybrid plasma system
|
Aleksandrov, A. F.
|
|
2016
|
|
6 |
p. 433-441
|
artikel
|
| 105 |
Initial stage of semiinsulating polycrystalline silicon film growth
|
Turtsevich, A. S.
|
|
2008
|
|
6 |
p. 349-355
|
artikel
|
| 106 |
Injection Diffusion-Drift Pulse Former
|
Gaev, D. S.
|
|
|
|
6 |
p. 411-415
|
artikel
|
| 107 |
In Memoriam: Academician Kamil A. Valiev January 15, 1931–July 28, 2010
|
|
|
2010
|
|
6 |
p. 377
|
artikel
|
| 108 |
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospects, Part IV
|
A. A. Orlikovskii
|
|
2001
|
|
6 |
p. 343-370
28 p.
|
artikel
|
| 109 |
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospects, Part IV
|
Orlikovskii, A. A.
|
|
2001
|
|
6 |
p. 343-370
|
artikel
|
| 110 |
Institute for design problems in microelectronics, Russian Academy of Sciences (IPPM RAS), Moscow, Russia
|
|
|
2011
|
|
6 |
p. 369-370
|
artikel
|
| 111 |
Integrated Laser Measuring System for the Ellipsometric and Photovoltage Characterization of Thin Surface Layers
|
V. A. Kotenev
|
|
2003
|
|
6 |
p. 355-360
6 p.
|
artikel
|
| 112 |
Integrated Laser Measuring System for the Ellipsometric and Photovoltage Characterization of Thin Surface Layers
|
Kotenev, V. A.
|
|
2003
|
|
6 |
p. 355-360
|
artikel
|
| 113 |
Integration of functional elements of resistive nonvolative memory with 1T-1R topology
|
Negrov, D. V.
|
|
2016
|
|
6 |
p. 383-395
|
artikel
|
| 114 |
Investigation into the selectivity of etching various materials by fast neutral particle beams
|
Maishev, Yu. P.
|
|
2014
|
|
6 |
p. 388-391
|
artikel
|
| 115 |
Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers
|
Egorkin, V. I.
|
|
2018
|
|
6 |
p. 388-392
|
artikel
|
| 116 |
Investigation of the BF3 plasma particle’s lateral distribution using two-view emission tomography
|
Fadeev, A. V.
|
|
2014
|
|
6 |
p. 407-412
|
artikel
|
| 117 |
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic Structures
|
S. A. Krivelevich
|
|
2000
|
|
6 |
p. 376-379
4 p.
|
artikel
|
| 118 |
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic Structures
|
Krivelevich, S. A.
|
|
2000
|
|
6 |
p. 376-379
|
artikel
|
| 119 |
IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms
|
Bakhadyrkhanov, M. K.
|
|
2012
|
|
6 |
p. 354-356
|
artikel
|
| 120 |
Kinetics and mechanisms of Cl2 or HCl plasma etching of copper
|
Efremov, A. M.
|
|
2007
|
|
6 |
p. 358-365
|
artikel
|
| 121 |
Kinetics and Mechanisms of Reactive-Ion Etching of Si and SiO2 in a Plasma of a Mixture of HBr + O2
|
Efremov, A. M.
|
|
|
|
6 |
p. 379-384
|
artikel
|
| 122 |
Kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CF2Cl2
|
Efremov, A. M.
|
|
2014
|
|
6 |
p. 401-406
|
artikel
|
| 123 |
Laser Plasma-Chemical Etching of Polycrystalline Diamond and Single-Crystal Sapphire
|
Red’kin, S. V.
|
|
|
|
6 |
p. 435-438
|
artikel
|
| 124 |
Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters
|
Gadoev, S. M.
|
|
2005
|
|
6 |
p. 383-385
|
artikel
|
| 125 |
Liquid-crystal thermography of hot spots on electronic components
|
Popov, V. M.
|
|
2007
|
|
6 |
p. 392-401
|
artikel
|
| 126 |
Logic synthesis from VHDL descriptions using LeonardoSpectrum: Theoretical basis
|
Bibilo, P. N.
|
|
2005
|
|
6 |
p. 397-406
|
artikel
|
| 127 |
Low-power CMOS switched-capacitor lowpass filter using current conveyors
|
Korotkov, A. S.
|
|
2006
|
|
6 |
p. 405-413
|
artikel
|
| 128 |
Low-temperature pulsed vapor-phase deposition of thin layers of metal ruthenium for micro- and nanoelectronics. Part 5. Interrelation of growth regularities, structure, and properties of ruthenium layers
|
Vasilyev, V. Yu.
|
|
2011
|
|
6 |
p. 403-413
|
artikel
|
| 129 |
Magneto-Optical Properties of Multilayer Structures Based on Cobalt and Chromium-Group Metals for Magnetic Memory Elements
|
Prokaznikov, A. V.
|
|
|
|
6 |
p. 454-464
|
artikel
|
| 130 |
Mathematical simulation of the influence of a focusing channel surface on the angle characteristics of a bundle of rapid neutral particles
|
Degtyarev, A. V.
|
|
2010
|
|
6 |
p. 405-410
|
artikel
|
| 131 |
Measurements of linear dimensions of silicon nanorelief elements with a near-rectangular profile by defocusing the electron probe of a scanning electron microscope
|
Valiev, K. A.
|
|
2010
|
|
6 |
p. 394-400
|
artikel
|
| 132 |
Mechanical Control of the Spectrum of a Chain of Resonators and the Organization of Remote Interaction Between Quantum Dots
|
Tsukanov, A. V.
|
|
|
|
6 |
p. 365-378
|
artikel
|
| 133 |
Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar
|
Efremov, A. M.
|
|
|
|
6 |
p. 379-386
|
artikel
|
| 134 |
MEMS Switch Based on a Cantilever with Increased Contact Force
|
Belozerov, I. A.
|
|
|
|
6 |
p. 475-482
|
artikel
|
| 135 |
Method for the Iterative Refinement of Parameter Values in Analytical Models of Microelectronic Devices Based on Integrated MOS Transistors
|
Sinyukin, A. S.
|
|
|
|
6 |
p. 398-403
|
artikel
|
| 136 |
Methods of Multiplex Spectroscopy in the Characterization of Nanoscale Multilayers
|
V. A. Kotenev
|
|
2004
|
|
6 |
p. 353-361
9 p.
|
artikel
|
| 137 |
Methods of Multiplex Spectroscopy in the Characterization of Nanoscale Multilayers
|
Kotenev, V. A.
|
|
2004
|
|
6 |
p. 353-361
|
artikel
|
| 138 |
Microelectromechanical System for Controlling Flow Past an Airfoil: Pressure Transducers
|
A. A. Taskin
|
|
2002
|
|
6 |
p. 359-365
7 p.
|
artikel
|
| 139 |
Microelectromechanical System for Controlling Flow Past an Airfoil: Pressure Transducers
|
Taskin, A. A.
|
|
2002
|
|
6 |
p. 359-365
|
artikel
|
| 140 |
Microwave Characteristics of Amplifiers on Nanoheterostructures of Gallium Nitride in the 80–100 GHz Frequency Range
|
Gnatyuk, D. L.
|
|
|
|
6 |
p. 404-410
|
artikel
|
| 141 |
Microwave characterization of undoped polycrystalline silicon
|
Borodovskii, P. A.
|
|
2006
|
|
6 |
p. 350-353
|
artikel
|
| 142 |
Mid- and Long-Wave IR Detectors Using an Hg1 xCdxTe Heteroepitaxial Layer
|
V. V. Vasilyev
|
|
2002
|
|
6 |
p. 351-358
8 p.
|
artikel
|
| 143 |
Mid- and Long-Wave IR Detectors Using an Hg1 – xCdxTe Heteroepitaxial Layer
|
Vasilyev, V. V.
|
|
2002
|
|
6 |
p. 351-358
|
artikel
|
| 144 |
Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass
|
P. B. Parchinskii
|
|
2001
|
|
6 |
p. 401-405
5 p.
|
artikel
|
| 145 |
Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass
|
Parchinskii, P. B.
|
|
2001
|
|
6 |
p. 401-405
|
artikel
|
| 146 |
Mo/Al/Mo/Au-based ohmic contacts to AlGaN/GaN heterostructures
|
Kondakov, M. N.
|
|
2016
|
|
6 |
p. 402-409
|
artikel
|
| 147 |
Modeling of Gold Adsorption by the Surface of Defect Graphene
|
Asadov, M. M.
|
|
|
|
6 |
p. 413-425
|
artikel
|
| 148 |
Modeling of the Crystallization and Correlation of the Properties with the Composition and Particle Size in Two-Dimensional GaSxSe1 –x (0 ≤ х ≤ 1)
|
Asadov, S. M.
|
|
|
|
6 |
p. 452-465
|
artikel
|
| 149 |
Modeling of the spectroscopic response of photonic isomers with NV-centers. Part II
|
Tsukanov, A. V.
|
|
2015
|
|
6 |
p. 355-367
|
artikel
|
| 150 |
Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma
|
Rezvanov, A. A.
|
|
2018
|
|
6 |
p. 415-426
|
artikel
|
| 151 |
Modeling the High-Voltage Gas-Discharge-Plasma Etching of SiO2
|
V. A. Kolpakov
|
|
2002
|
|
6 |
p. 366-374
9 p.
|
artikel
|
| 152 |
Modeling the High-Voltage Gas-Discharge-Plasma Etching of SiO2
|
Kolpakov, V. A.
|
|
2002
|
|
6 |
p. 366-374
|
artikel
|
| 153 |
Modification of the positive photoresist surface by ion implantation
|
Brinkevich, D. I.
|
|
2015
|
|
6 |
p. 399-403
|
artikel
|
| 154 |
Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure
|
Fedorov, Yu. V.
|
|
2017
|
|
6 |
p. 404-407
|
artikel
|
| 155 |
Nano- and micrometer-scale thin-film-interconnection failure theory and simulation and metallization lifetime prediction, Part 1: A general theory of vacancy transport, mechanical-stress generation, and void nucleation under electromigration in relation to multilevel-metallization degeneration and failure
|
Valiev, K. A.
|
|
2009
|
|
6 |
p. 364-384
|
artikel
|
| 156 |
Negative Differential Conductance of a Quasi-Ballistic MESFET
|
S. V. Obolenskii
|
|
2001
|
|
6 |
p. 394-400
7 p.
|
artikel
|
| 157 |
Negative Differential Conductance of a Quasi-Ballistic MESFET
|
Obolenskii, S. V.
|
|
2001
|
|
6 |
p. 394-400
|
artikel
|
| 158 |
New approach to the manufacturing of power microwave bipolar transistors: A computer simulation
|
Snitovsky, Yu. P.
|
|
2007
|
|
6 |
p. 409-414
|
artikel
|
| 159 |
New Method for Standard-Cell Routing Subject to Electrical Constraints
|
A. S. Plekhanov
|
|
2003
|
|
6 |
p. 339-346
8 p.
|
artikel
|
| 160 |
New Method for Standard-Cell Routing Subject to Electrical Constraints
|
Plekhanov, A. S.
|
|
2003
|
|
6 |
p. 339-346
|
artikel
|
| 161 |
New Methods for Making the Qubits of a Solid-State Quantum Computer by Implantation of Single Highly Charged 31P Ions
|
V. A. Zhukov
|
|
2003
|
|
6 |
p. 347-354
8 p.
|
artikel
|
| 162 |
New Methods for Making the Qubits of a Solid-State Quantum Computer by Implantation of Single Highly Charged 31P Ions
|
Zhukov, V. A.
|
|
2003
|
|
6 |
p. 347-354
|
artikel
|
| 163 |
Non-Archimedean Calculus in the Mathematical Modeling of Digital ICs
|
E. G. Shcheglov
|
|
2002
|
|
6 |
p. 384-395
12 p.
|
artikel
|
| 164 |
Non-Archimedean Calculus in the Mathematical Modeling of Digital ICs
|
Shcheglov, E. G.
|
|
2002
|
|
6 |
p. 384-395
|
artikel
|
| 165 |
Noncontact Temperature Measurement on Dielectrics and Semiconductors, Part 1
|
V. K. Bitukov
|
|
2004
|
|
6 |
p. 329-341
13 p.
|
artikel
|
| 166 |
Noncontact Temperature Measurement on Dielectrics and Semiconductors, Part 1
|
Bitukov, V. K.
|
|
2004
|
|
6 |
p. 329-341
|
artikel
|
| 167 |
Nonequivalence of biparticle and multiparticle quantum entanglements
|
Chernyavskii, A. Yu.
|
|
2009
|
|
6 |
p. 406-408
|
artikel
|
| 168 |
Nonlinearity estimation of scanning on a scanning electron microscope
|
Alzoba, V. V.
|
|
2012
|
|
6 |
p. 351-353
|
artikel
|
| 169 |
Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central Processor
|
Yu. I. Balkarei
|
|
2000
|
|
6 |
p. 355-361
7 p.
|
artikel
|
| 170 |
Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central Processor
|
Balkarei, Yu. I.
|
|
2000
|
|
6 |
p. 355-361
|
artikel
|
| 171 |
Numerical simulation of two-particle resonant scattering with the formation of a molecular ion
|
Arakelov, K. S.
|
|
2008
|
|
6 |
p. 382-389
|
artikel
|
| 172 |
On the Effect of the Cl2 + O2 + Ar Mixture Composition on the Concentrations of Chlorine and Oxygen Atoms in a Plasma
|
Amirov, I. I.
|
|
|
|
6 |
p. 497-504
|
artikel
|
| 173 |
On the possibility of controlling thermal conditions of a typical element of electronic equipment with a local heat source via Natural Convection
|
Kuznetsov, G. V.
|
|
2010
|
|
6 |
p. 427-442
|
artikel
|
| 174 |
Operational Features of MEMS with an Even Number of Electrodes
|
Dragunov, V. P.
|
|
2018
|
|
6 |
p. 393-406
|
artikel
|
| 175 |
Operation of an electronic lithograph in the mode of a scanning electron microscope
|
Kal’nov, V. A.
|
|
2012
|
|
6 |
p. 347-350
|
artikel
|
| 176 |
Optically Pumped Bipolar Transistor
|
Al’tudov, Yu. K.
|
|
|
|
6 |
p. 510-516
|
artikel
|
| 177 |
Optical maskless lithography
|
Belokopytov, G. V.
|
|
2011
|
|
6 |
p. 414-427
|
artikel
|
| 178 |
Optical Second-Harmonic Microscopy Applied to the Local Probing of the State of Polarization in Thin Films of Lead Zirconate Titanate
|
E. D. Mishina
|
|
2001
|
|
6 |
p. 371-380
10 p.
|
artikel
|
| 179 |
Optical Second-Harmonic Microscopy Applied to the Local Probing of the State of Polarization in Thin Films of Lead Zirconate Titanate
|
Mishina, E. D.
|
|
2001
|
|
6 |
p. 371-380
|
artikel
|
| 180 |
Paramagnetic-center detection by SQUID measurement of static magnetic susceptibility
|
Golovashkin, A. I.
|
|
2006
|
|
6 |
p. 354-358
|
artikel
|
| 181 |
Parameters and composition of HBr plasma under the conditions of glow DC discharge
|
Smirnov, A. A.
|
|
2010
|
|
6 |
p. 418-426
|
artikel
|
| 182 |
Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He Plasma
|
Efremov, A. M.
|
|
|
|
6 |
p. 480-487
|
artikel
|
| 183 |
Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition
|
Efremov, A. M.
|
|
2018
|
|
6 |
p. 371-380
|
artikel
|
| 184 |
Peculiarities of the Kinetics of Heterogeneous Processes during the Etching of Silicon in CF4 and C2Br2F4 Plasma
|
Miakonkikh, A. V.
|
|
|
|
6 |
p. 505-511
|
artikel
|
| 185 |
Performance Calculation for a MEMS Switch with a Floating Electrode
|
Morozov, M. O.
|
|
|
|
6 |
p. 493-503
|
artikel
|
| 186 |
Performance Estimation and Application of Analog Device using 32 nm CNFET
|
Tripathi, S. K.
|
|
|
|
6 |
p. 540-546
|
artikel
|
| 187 |
Photoassisted scanning-probe nanolithography on Ti films
|
Ageev, A. O.
|
|
2007
|
|
6 |
p. 353-357
|
artikel
|
| 188 |
Photoconductivity of silicon with nanoclusters of manganese atoms
|
Bakhadyrkhanov, M. K.
|
|
2010
|
|
6 |
p. 401-404
|
artikel
|
| 189 |
Positronics and nanotechnologies: Possibilities of studying nanoobjects in critical engineering materials using positron annihilation spectrometry
|
Grafutin, V. I.
|
|
2009
|
|
6 |
p. 418-428
|
artikel
|
| 190 |
Power Consumption of Quasi-adiabatic Logic Gates
|
V. V. Losev
|
|
2003
|
|
6 |
p. 323-332
10 p.
|
artikel
|
| 191 |
Power Consumption of Quasi-adiabatic Logic Gates
|
Losev, V. V.
|
|
2003
|
|
6 |
p. 323-332
|
artikel
|
| 192 |
Predicting the Effect of Pulsed Ionizing Radiation on Operational Amplifiers
|
T. M. Agakhanyan
|
|
2002
|
|
6 |
p. 375-383
9 p.
|
artikel
|
| 193 |
Predicting the Effect of Pulsed Ionizing Radiation on Operational Amplifiers
|
Agakhanyan, T. M.
|
|
2002
|
|
6 |
p. 375-383
|
artikel
|
| 194 |
Probe and Spectral Diagnostics of the Plasma of the BCl3–Cl2 Gas Medium
|
Murin, D. B.
|
|
|
|
6 |
p. 469-474
|
artikel
|
| 195 |
Prototypes of Devices for Heterogeneous Hybrid Semiconductor Electronics with an Embedded Biomolecular Domain
|
Baranov, M. A.
|
|
|
|
6 |
p. 517-526
|
artikel
|
| 196 |
Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods
|
Trushin, O. S.
|
|
2018
|
|
6 |
p. 381-387
|
artikel
|
| 197 |
Quantum-aperture formation in a quasi-ballistic MESFET by neutron irradiation
|
Gromov, V. T.
|
|
2005
|
|
6 |
p. 359-364
|
artikel
|
| 198 |
Quantum calculations on quantum dots in semiconductor microcavities. Part II
|
Tsukanov, A. V.
|
|
2014
|
|
6 |
p. 377-387
|
artikel
|
| 199 |
Quantum dots in photonic molecules and quantum informatics. Part I
|
Tsukanov, A. V.
|
|
2013
|
|
6 |
p. 325-346
|
artikel
|
| 200 |
Quantum noise and the quality control of hardware components of quantum computers based on superconducting phase qubits
|
Bogdanov, Yu. I.
|
|
2012
|
|
6 |
p. 325-335
|
artikel
|
| 201 |
Quantum Size Effect Due to the Electron Transport over Bismuth Nanobridges with 2D Electron Gas
|
A. I. Il'in
|
|
2003
|
|
6 |
p. 377-381
5 p.
|
artikel
|
| 202 |
Quantum Size Effect Due to the Electron Transport over Bismuth Nanobridges with 2D Electron Gas
|
Il'in, A. I.
|
|
2003
|
|
6 |
p. 377-381
|
artikel
|
| 203 |
Quantum state depressions in thin metal films with an indented surface
|
Tavkhelidze, A. N.
|
|
2009
|
|
6 |
p. 429-433
|
artikel
|
| 204 |
Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers
|
V. Ya. Uritskii
|
|
2000
|
|
6 |
p. 413-416
4 p.
|
artikel
|
| 205 |
Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers
|
Uritskii, V. Ya.
|
|
2000
|
|
6 |
p. 413-416
|
artikel
|
| 206 |
Resistors Integrated into MCM-D Modules: Fabrication and Performance
|
A. I. Vorob'eva
|
|
2000
|
|
6 |
p. 368-375
8 p.
|
artikel
|
| 207 |
Resistors Integrated into MCM-D Modules: Fabrication and Performance
|
Vorob'eva, A. I.
|
|
2000
|
|
6 |
p. 368-375
|
artikel
|
| 208 |
Resonator-based superconducting qubit
|
Zhilyaev, I. N.
|
|
2005
|
|
6 |
p. 407-409
|
artikel
|
| 209 |
Reverse I-V characteristics of a diode-connected heterostructure MESFET
|
Burzin, S. B.
|
|
2007
|
|
6 |
p. 415-421
|
artikel
|
| 210 |
Scanning electron microscopy used to measure the feature dimensions of a nanoscale test pattern on a silicon surface
|
Gavrilenko, V. P.
|
|
2011
|
|
6 |
p. 436-440
|
artikel
|
| 211 |
Self-organization process under electrolytic formation of nanostructures in silicon-based semi-conducting systems
|
Arzhanova, N. A.
|
|
2014
|
|
6 |
p. 413-426
|
artikel
|
| 212 |
Self-organized growth mechanism for porous aluminum anodic oxide
|
Vorobyova, A. I.
|
|
2007
|
|
6 |
p. 384-391
|
artikel
|
| 213 |
SEM Linear Measurement in a Wide Magnification Range
|
Ch. P. Volk
|
|
2004
|
|
6 |
p. 342-349
8 p.
|
artikel
|
| 214 |
SEM Linear Measurement in a Wide Magnification Range
|
Volk, Ch. P.
|
|
2004
|
|
6 |
p. 342-349
|
artikel
|
| 215 |
Set Based Theoretical Approach to the Representation of Routing Stage in the Design Flow for the Heterogeneous FPGAs and Reconfigurable SoCs
|
Enns, V. I.
|
|
|
|
6 |
p. 463-470
|
artikel
|
| 216 |
Silicon-Ingot Inspection by Active IR Imaging
|
V. A. Yuryev
|
|
2004
|
|
6 |
p. 350-352
3 p.
|
artikel
|
| 217 |
Silicon-Ingot Inspection by Active IR Imaging
|
Yuryev, V. A.
|
|
2004
|
|
6 |
p. 350-352
|
artikel
|
| 218 |
Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate
|
Egorkin, V. I.
|
|
|
|
6 |
p. 445-451
|
artikel
|
| 219 |
Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire
|
Pozdnyakov, D. V.
|
|
|
|
6 |
p. 483-492
|
artikel
|
| 220 |
Simulation of mass transfer of liquids through microchannels under the influence of surface acoustic waves
|
Sirotkin, V. V.
|
|
2016
|
|
6 |
p. 414-418
|
artikel
|
| 221 |
Simulation of the effects of deep grooving in silicon in the plasmochemical cyclic process
|
Shumilov, A. S.
|
|
2009
|
|
6 |
p. 385-392
|
artikel
|
| 222 |
Simulation the Effects of Single Nuclear Particles on STG RS Triggers with Transistors Spacing into Two Groups
|
Stenin, V. Ya.
|
|
2018
|
|
6 |
p. 407-414
|
artikel
|
| 223 |
Single-Photon Response and Spectroscopy of a Photonic Molecule Based on Diamond Microrings
|
Tsukanov, A. V.
|
|
2017
|
|
6 |
p. 379-389
|
artikel
|
| 224 |
Size effect relating to the extraordinary and the ordinary Hall effect in ultrathin Fe-Pt films
|
Matveev, V. N.
|
|
2006
|
|
6 |
p. 392-397
|
artikel
|
| 225 |
Smart fiber-optical sensor of acoustic pressure with a possibility of distant correction of sensitivity
|
Egorov, F. A.
|
|
2016
|
|
6 |
p. 442-445
|
artikel
|
| 226 |
Space Surface Parameters Determined from Fourier Transforms in Atomic Force Microscopy
|
P. A. Arutyunov
|
|
2000
|
|
6 |
p. 401-405
5 p.
|
artikel
|
| 227 |
Space Surface Parameters Determined from Fourier Transforms in Atomic Force Microscopy
|
Arutyunov, P. A.
|
|
2000
|
|
6 |
p. 401-405
|
artikel
|
| 228 |
Spectral Control of the Process of Copper Etching in Radio Frequency Dichlorodifluoromethane Plasma
|
Murin, D. B.
|
|
|
|
6 |
p. 359-367
|
artikel
|
| 229 |
Spectral study of HCl plasma etching of gallium arsenide
|
Dunaev, A. V.
|
|
2011
|
|
6 |
p. 379-382
|
artikel
|
| 230 |
Spots Concept for Problems of Artificial Intelligence and Algorithms of Neuromorphic Systems
|
Simonov, N. A.
|
|
|
|
6 |
p. 431-444
|
artikel
|
| 231 |
Stabilization of StructureImpurity and Electrophysical Parameters in the Si/SiO2 System
|
N. Ya. Zaitsev
|
|
2000
|
|
6 |
p. 397-400
4 p.
|
artikel
|
| 232 |
Stabilization of Structure–Impurity and Electrophysical Parameters in the Si/SiO2 System
|
Zaitsev, N. Ya.
|
|
2000
|
|
6 |
p. 397-400
|
artikel
|
| 233 |
Stacked Gate FinFET with Gate Extension for Improved Gate Control
|
Sangeeta Mangesh,
|
|
2018
|
|
6 |
p. 443-448
|
artikel
|
| 234 |
Statistical Models and Adequacy Validation for Optical Quantum State Tomography with Quadrature Measurements
|
Bogdanov, Yu. I.
|
|
2017
|
|
6 |
p. 371-378
|
artikel
|
| 235 |
Strong influence of surface scattering on the electron transport through magnetic multilayers
|
V’yurkov, V. V.
|
|
2005
|
|
6 |
p. 339-343
|
artikel
|
| 236 |
Study of Spin-Tunnel Junction Magnetization Using Coherent Rotation of the Free Layer Magnetization Model
|
Amelichev, V. V.
|
|
|
|
6 |
p. 420-425
|
artikel
|
| 237 |
Study of the methods of calibration of the process OPC VT-5 models with a variable threshold
|
Rodionov, I. A.
|
|
2010
|
|
6 |
p. 443-455
|
artikel
|
| 238 |
Superconducting resonators and charge qubits: Spectroscopy and quantum operations. Part I
|
Tsukanov, A. V.
|
|
2010
|
|
6 |
p. 378-393
|
artikel
|
| 239 |
Surface-Defect Imaging in Optical Topography
|
S. F. Sen'ko
|
|
2003
|
|
6 |
p. 361-370
10 p.
|
artikel
|
| 240 |
Surface-Defect Imaging in Optical Topography
|
Sen'ko, S. F.
|
|
2003
|
|
6 |
p. 361-370
|
artikel
|
| 241 |
Tapered Silicon Oxide Etching for Creation of Capacitor Structures for Measurement of Dielectric Characteristics
|
Miakonkikh, A. V.
|
|
|
|
6 |
p. 535-539
|
artikel
|
| 242 |
Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon Transistors
|
Ismailov, T. A.
|
|
|
|
6 |
p. 385-388
|
artikel
|
| 243 |
The Bulk-Recombination Mechanism of Negative Relative Sensitivity Observed in Bipolar Magnetotransistors
|
R. D. Tikhonov
|
|
2004
|
|
6 |
p. 377-380
4 p.
|
artikel
|
| 244 |
The Bulk-Recombination Mechanism of Negative Relative Sensitivity Observed in Bipolar Magnetotransistors
|
Tikhonov, R. D.
|
|
2004
|
|
6 |
p. 377-380
|
artikel
|
| 245 |
The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 xAs/GaAs System
|
A. A. Lomov
|
|
2000
|
|
6 |
p. 362-367
6 p.
|
artikel
|
| 246 |
The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs System
|
Lomov, A. A.
|
|
2000
|
|
6 |
p. 362-367
|
artikel
|
| 247 |
Thermal Atomic Layer Deposition of TiNx Using TiCl4 and N2H4
|
Abdulagatov, A. I.
|
|
|
|
6 |
p. 389-403
|
artikel
|
| 248 |
The Use of Finite Element Modeling for Calculating the C-V Curve of Capacitor Mems Microphone
|
Grigor’ev, D. M.
|
|
2017
|
|
6 |
p. 396-403
|
artikel
|
| 249 |
Thin-film capacitor based on the strontium titanate formed by the sol gel technique
|
Anaraki, Kh. Sokhrabi
|
|
2015
|
|
6 |
p. 425-429
|
artikel
|
| 250 |
Topological transformation of submicron VLSIs for the double lithographic mask technology
|
Shakhnov, V. A.
|
|
2013
|
|
6 |
p. 347-359
|
artikel
|
| 251 |
Total Efficiency of the Optical-to-Terahertz Conversion in Photoconductive Antennas Based on LT-GaAs and In0.38Ga0.62As
|
Glinskiy, I. A.
|
|
2017
|
|
6 |
p. 408-413
|
artikel
|
| 252 |
Tungstic acid-assisted thermal oxidation of GaAs
|
Lavrushina, S. S.
|
|
2007
|
|
6 |
p. 366-370
|
artikel
|
| 253 |
Ultimate thermomechanical read rate from AFM data storage
|
Petrin, A. B.
|
|
2006
|
|
6 |
p. 382-391
|
artikel
|
| 254 |
Upset-resilient RAM on STG DICE memory elements with the spaced transistors into two groups
|
Stenin, V. Ya.
|
|
2016
|
|
6 |
p. 419-432
|
artikel
|
| 255 |
Wave phenomena in the finishing of diamond crystals
|
Pintus, S. M.
|
|
2011
|
|
6 |
p. 395-402
|
artikel
|
| 256 |
Ways of increasing the service life of positive photoresists
|
Lebedev, V. I.
|
|
2016
|
|
6 |
p. 410-413
|
artikel
|
| 257 |
X-band monolithic transmit-receive switch based on a stub directional coupler
|
Mokerov, V. G.
|
|
2005
|
|
6 |
p. 344-355
|
artikel
|
| 258 |
X-ray and UV Adjustment of Threshold Voltage in MOS-Circuit Manufacture
|
M. N. Levin
|
|
2002
|
|
6 |
p. 346-350
5 p.
|
artikel
|
| 259 |
X-ray and UV Adjustment of Threshold Voltage in MOS-Circuit Manufacture
|
Levin, M. N.
|
|
2002
|
|
6 |
p. 346-350
|
artikel
|
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