| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acid hardenable, spin-coatable silicon ladder polymer systems as resist materials
|
Hiraoka, Hiroyuki
|
|
1991
|
13 |
1-4 |
p. 61-64
4 p.
|
artikel
|
| 2 |
A 3.5 GHz electron beam shaper
|
Mulder, E.H.
|
|
1991
|
13 |
1-4 |
p. 157-160
4 p.
|
artikel
|
| 3 |
A lithography workcell monitoring and modeling scheme
|
Ling, Zhi-min
|
|
1991
|
13 |
1-4 |
p. 537-540
4 p.
|
artikel
|
| 4 |
A 0,25μm NMOS transistor fabricated with X-ray lithography
|
Breithaupt, B.
|
|
1991
|
13 |
1-4 |
p. 319-322
4 p.
|
artikel
|
| 5 |
An advanced multi-layer resist system for precise delineation with planarization
|
Ishida, Ichiro
|
|
1991
|
13 |
1-4 |
p. 125-128
4 p.
|
artikel
|
| 6 |
Analysis of large electron optical systems with many interacting optical elements
|
Petric, Paul F.
|
|
1991
|
13 |
1-4 |
p. 161-164
4 p.
|
artikel
|
| 7 |
Analytic waveguide solutions and the coherence probe microscope
|
Davidson, Mark P.
|
|
1991
|
13 |
1-4 |
p. 523-526
4 p.
|
artikel
|
| 8 |
An in-depth study of the influence of silylation conditions on the silicon contrast
|
Goethals, A.M.
|
|
1991
|
13 |
1-4 |
p. 37-40
4 p.
|
artikel
|
| 9 |
A novel development process for suppressing swelling of EB resist
|
Maruyama, T.
|
|
1991
|
13 |
1-4 |
p. 201-204
4 p.
|
artikel
|
| 10 |
A novel silicon containing chemical amplification resist for electron beam lithography
|
Watanabe, H.
|
|
1991
|
13 |
1-4 |
p. 69-72
4 p.
|
artikel
|
| 11 |
Application of gold plated edges for the measurement of the electron beam diameter
|
Gentili, M.
|
|
1991
|
13 |
1-4 |
p. 185-188
4 p.
|
artikel
|
| 12 |
A radiation source for x-ray lithography
|
Cullmann, E.
|
|
1991
|
13 |
1-4 |
p. 299-303
5 p.
|
artikel
|
| 13 |
A study of dry etching mechanisms in CL2 by ion energy analysis at the rf-electrode
|
Manenschijn, A.
|
|
1991
|
13 |
1-4 |
p. 451-454
4 p.
|
artikel
|
| 14 |
A study of proximity effects at high electron-beam voltages for x-ray mask fabrication part 1: Additive mask processes
|
Rosenfield, M.G.
|
|
1991
|
13 |
1-4 |
p. 165-172
8 p.
|
artikel
|
| 15 |
Audio frequency plasma generation reactor configurations for dry etch processing
|
Brasseur, Guy J.J.
|
|
1991
|
13 |
1-4 |
p. 477-480
4 p.
|
artikel
|
| 16 |
Author index volume
|
|
|
1991
|
13 |
1-4 |
p. 559-573
15 p.
|
artikel
|
| 17 |
Characterization of silicon open stencil masks in an ion projection lithography machine
|
Buchmann, L.-M.
|
|
1991
|
13 |
1-4 |
p. 353-356
4 p.
|
artikel
|
| 18 |
Chemical amplification in submicron lithography: An information theoretic analysis
|
Szmanda, Charles R.
|
|
1991
|
13 |
1-4 |
p. 23-28
6 p.
|
artikel
|
| 19 |
Chemistry and processes for deep-UV resists
|
Reichmanis, E.
|
|
1991
|
13 |
1-4 |
p. 3-10
8 p.
|
artikel
|
| 20 |
Comparison of double and single recessed 0.15μm gate length δ doped AlGaAs/GaAs TEGFETs
|
Jin, Y.
|
|
1991
|
13 |
1-4 |
p. 381-384
4 p.
|
artikel
|
| 21 |
Comparison of vapor and liquid phase silylation processes of photoresists
|
Babich, E.
|
|
1991
|
13 |
1-4 |
p. 47-50
4 p.
|
artikel
|
| 22 |
Computer aided proximity correction for direct write E-beam lithography
|
Knapek, E.
|
|
1991
|
13 |
1-4 |
p. 181-184
4 p.
|
artikel
|
| 23 |
Conducting polyaniline: Removable SEM discharge layer
|
Angelopoulos, Marie
|
|
1991
|
13 |
1-4 |
p. 515-518
4 p.
|
artikel
|
| 24 |
Contents
|
|
|
1991
|
13 |
1-4 |
p. xi-xvii
nvt p.
|
artikel
|
| 25 |
Deep-UV lithography mask fabrication with 200nm feature size using a liftoff technique
|
Gruhle, A.
|
|
1991
|
13 |
1-4 |
p. 217-220
4 p.
|
artikel
|
| 26 |
Description of microstructures in LIGA-technology
|
Bley, Peter
|
|
1991
|
13 |
1-4 |
p. 509-512
4 p.
|
artikel
|
| 27 |
Detection of dry-etched induced damage by non-contact photo-thermal radiometry, photoluminescence and deep level transient spectroscopy
|
Herbert, P.A.F.
|
|
1991
|
13 |
1-4 |
p. 437-441
5 p.
|
artikel
|
| 28 |
Direct delineation of fine metallic patterns through hydrogen reduction of inorganic resist HPA
|
Yoshimura, Toshiyuki
|
|
1991
|
13 |
1-4 |
p. 97-100
4 p.
|
artikel
|
| 29 |
Dry development of the DESIRE process in a DECR reactor
|
Dijkstra, J.
|
|
1991
|
13 |
1-4 |
p. 455-458
4 p.
|
artikel
|
| 30 |
Dry etching for silylated resist development
|
Laporte, P.
|
|
1991
|
13 |
1-4 |
p. 469-472
4 p.
|
artikel
|
| 31 |
E-beam induced X-ray mask repair with optimized gas nozzle geometry
|
Kohlmann, K.T.
|
|
1991
|
13 |
1-4 |
p. 279-282
4 p.
|
artikel
|
| 32 |
E-beam patterning by a double exposure process
|
Lalanne, Frédéric
|
|
1991
|
13 |
1-4 |
p. 173-176
4 p.
|
artikel
|
| 33 |
Editorial Board
|
|
|
1991
|
13 |
1-4 |
p. vi-viii
nvt p.
|
artikel
|
| 34 |
Electron scattering effects in additive patterning of XRL masks for 0.2 micron resolution
|
Carcenac, F.
|
|
1991
|
13 |
1-4 |
p. 197-200
4 p.
|
artikel
|
| 35 |
Enhanced oxygen reactive ion etching resistance of diazonaphthoquinone-poly(formyloxystyrene) resist system by photoacid catalyzed photo-fries rearrangement and potassium ion treatment in aqueous solution
|
Loong, Wen-an
|
|
1991
|
13 |
1-4 |
p. 101-104
4 p.
|
artikel
|
| 36 |
Epitaxial overgrowth on nanometric InP wires processed by reactive ion etching
|
Izrael, A.
|
|
1991
|
13 |
1-4 |
p. 395-398
4 p.
|
artikel
|
| 37 |
Evaluation of an advanced submicron X-ray stepper (XRS 200): Pattern transfer and alignment accuracy
|
Simon, K.
|
|
1991
|
13 |
1-4 |
p. 309-314
6 p.
|
artikel
|
| 38 |
Evaluation of a vertical x-ray stepper
|
Fukuda, M.
|
|
1991
|
13 |
1-4 |
p. 305-308
4 p.
|
artikel
|
| 39 |
Experimental design method applied in IC process design
|
Yie, He
|
|
1991
|
13 |
1-4 |
p. 555-558
4 p.
|
artikel
|
| 40 |
Experiments in projection lithography using soft x-rays
|
Bjorkholm, J.E.
|
|
1991
|
13 |
1-4 |
p. 243-250
8 p.
|
artikel
|
| 41 |
Fabrication and tests of multilayer Bragg-Fresnel X-ray lenses
|
Erko, A.I.
|
|
1991
|
13 |
1-4 |
p. 335-338
4 p.
|
artikel
|
| 42 |
Fabrication of buried GaAlAs NM-structures by deep UV holographic lithography and MBE growth on finely channelled substrates
|
Marti, U.
|
|
1991
|
13 |
1-4 |
p. 391-394
4 p.
|
artikel
|
| 43 |
Fabrication of microstructures for quantum devices using focused ion beam gas-assisted etching
|
Ochiai, Y.
|
|
1991
|
13 |
1-4 |
p. 399-402
4 p.
|
artikel
|
| 44 |
Fabrication of 35 nm linewidth gold rings and observation of h/e and h/2e magnetoconductance oscillations
|
Verbruggen, A.H.
|
|
1991
|
13 |
1-4 |
p. 407-410
4 p.
|
artikel
|
| 45 |
Fabrication of optoelectronic devices on AlGaAs using electron beam lithography
|
Stauffer, J-M.
|
|
1991
|
13 |
1-4 |
p. 193-196
4 p.
|
artikel
|
| 46 |
Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using focused ion beam implanted gates
|
Blaikie, Richard J.
|
|
1991
|
13 |
1-4 |
p. 373-376
4 p.
|
artikel
|
| 47 |
Fabrication of sub-100nm dual-gate MODFETS with enhanced performance
|
Lee, K.Y.
|
|
1991
|
13 |
1-4 |
p. 377-380
4 p.
|
artikel
|
| 48 |
Focused ion beam system with high current density
|
Bischoff, L.
|
|
1991
|
13 |
1-4 |
p. 367-370
4 p.
|
artikel
|
| 49 |
Fragmentation in magnetically enhanced reactive ion etching - a LIF and OES study in a CF4 discharge
|
Heinrich, F.
|
|
1991
|
13 |
1-4 |
p. 433-436
4 p.
|
artikel
|
| 50 |
Functional testing as a tool in photoresist fabrication
|
Dentruck, B.
|
|
1991
|
13 |
1-4 |
p. 119-123
5 p.
|
artikel
|
| 51 |
Helios: Further progress on helios : A compact synchrotron X-ray source
|
Kempson, VC
|
|
1991
|
13 |
1-4 |
p. 287-290
4 p.
|
artikel
|
| 52 |
High-accuracy X-ray masks with sub-half-micron 1M-DRAM chips
|
Ohki, Shigehisa
|
|
1991
|
13 |
1-4 |
p. 251-254
4 p.
|
artikel
|
| 53 |
High aspect ratio, 0.1 μm structures obtained by single layer resist and conventional electron beam lithography
|
Gentili, M.
|
|
1991
|
13 |
1-4 |
p. 213-216
4 p.
|
artikel
|
| 54 |
Highly sensitive positive deep UV resist utilizing a sulfonate acid generator and a tetrahydropyranyl inhibitor
|
Schlegel, Leo
|
|
1991
|
13 |
1-4 |
p. 33-36
4 p.
|
artikel
|
| 55 |
Illumination effects on image formation in X-ray proximity printing
|
Vladimirsky, Y.
|
|
1991
|
13 |
1-4 |
p. 343-346
4 p.
|
artikel
|
| 56 |
Improved resist contrast with novolac based E-beam resists using modified development procedures
|
Jonckheere, R.
|
|
1991
|
13 |
1-4 |
p. 209-212
4 p.
|
artikel
|
| 57 |
Improvement of the DESIRE process using PROMOTE technology
|
Reuhman-Huisken, M.E.
|
|
1991
|
13 |
1-4 |
p. 41-46
6 p.
|
artikel
|
| 58 |
In situ pattern formation of GaAs by electron-beam-stimulated oxidation and subsequent Cl2 gas etching
|
Sugimoto, Y.
|
|
1991
|
13 |
1-4 |
p. 403-406
4 p.
|
artikel
|
| 59 |
Investigation of the process latitude for sub-half-micron pattern replication in X-ray lithography
|
Oertel, H.K.
|
|
1991
|
13 |
1-4 |
p. 339-342
4 p.
|
artikel
|
| 60 |
Laser cleaning of wafer surfaces and lithography masks
|
Zapka, W.
|
|
1991
|
13 |
1-4 |
p. 547-550
4 p.
|
artikel
|
| 61 |
Laser photoetching of doped poly(tetrafluoroethylene), substituted-PTFE, and polyimide films
|
Hiraoka, Hiroyuki
|
|
1991
|
13 |
1-4 |
p. 429-432
4 p.
|
artikel
|
| 62 |
Light scattering properties of x-ray lithography mask substrates
|
Maldonado, J.R.
|
|
1991
|
13 |
1-4 |
p. 347-350
4 p.
|
artikel
|
| 63 |
Lithographic performance of an EL-3 system at 0.25μm groundrules
|
Newman, T.H.
|
|
1991
|
13 |
1-4 |
p. 151-156
6 p.
|
artikel
|
| 64 |
Low energy silicon etching technologies
|
Horiike, Y.
|
|
1991
|
13 |
1-4 |
p. 417-424
8 p.
|
artikel
|
| 65 |
Metallized photoresists: A new approach to surface imaging
|
Abali, L.N.
|
|
1991
|
13 |
1-4 |
p. 93-96
4 p.
|
artikel
|
| 66 |
Metrology using differential phase contrast microscopy
|
Shaw, Jerry C.
|
|
1991
|
13 |
1-4 |
p. 527-530
4 p.
|
artikel
|
| 67 |
Micro-extraction fields to improve electron beam test measurements
|
Khursheed, A.
|
|
1991
|
13 |
1-4 |
p. 519-522
4 p.
|
artikel
|
| 68 |
Microfabrication of metal-coated silicon tips and their field emission properties
|
Stephani, D.
|
|
1991
|
13 |
1-4 |
p. 505-508
4 p.
|
artikel
|
| 69 |
Mix-and-match EBP/optical lithography of 1 Mbit chips
|
Zapka, W.
|
|
1991
|
13 |
1-4 |
p. 357-360
4 p.
|
artikel
|
| 70 |
Mix and match lithography for 0.1 μm MOSFET fabrication
|
Miéville, J.P.
|
|
1991
|
13 |
1-4 |
p. 189-192
4 p.
|
artikel
|
| 71 |
Modelling of aluminium plasma etch processes
|
Colson, Paul M.F.
|
|
1991
|
13 |
1-4 |
p. 481-484
4 p.
|
artikel
|
| 72 |
Nanometer pattern fabrication using a novel X-ray mask with a cross-sectioned metal thin film absorber
|
Horiuchi, T.
|
|
1991
|
13 |
1-4 |
p. 315-318
4 p.
|
artikel
|
| 73 |
Nanostructure fabrication by electron beam lithography on insulating substrates using a novel four-layer resist
|
Langheinrich, Wolfram
|
|
1991
|
13 |
1-4 |
p. 225-228
4 p.
|
artikel
|
| 74 |
Novel beamline optics for x-ray lithography
|
Cole, R.K.
|
|
1991
|
13 |
1-4 |
p. 295-298
4 p.
|
artikel
|
| 75 |
Optical versus X-ray lithography for future device fabrication
|
Arden, Wolfgang
|
|
1991
|
13 |
1-4 |
p. 231-241
11 p.
|
artikel
|
| 76 |
Performance optimization of the chemically amplified radiation resist RAY-PF
|
Ballhorn, R.-U.
|
|
1991
|
13 |
1-4 |
p. 73-78
6 p.
|
artikel
|
| 77 |
Periodic conductance resonances in one-dimensional GaAs channels with nanoconstrictions
|
Wind, S.J.
|
|
1991
|
13 |
1-4 |
p. 411-414
4 p.
|
artikel
|
| 78 |
Photoablative etching of polymers for integrated optoelectronic devices
|
Lemoine, P.
|
|
1991
|
13 |
1-4 |
p. 447-450
4 p.
|
artikel
|
| 79 |
Positive-tone silylation processes at 193 nm
|
Hartney, M.A.
|
|
1991
|
13 |
1-4 |
p. 51-56
6 p.
|
artikel
|
| 80 |
Preface
|
|
|
1991
|
13 |
1-4 |
p. ix-
1 p.
|
artikel
|
| 81 |
Printability of x-ray mask defects in sub 0.5 μm mask pattern
|
Kluwe, A.
|
|
1991
|
13 |
1-4 |
p. 331-334
4 p.
|
artikel
|
| 82 |
Process control capability using a diaphragm photochemical dispense system
|
Cambria, Terrell D.
|
|
1991
|
13 |
1-4 |
p. 551-554
4 p.
|
artikel
|
| 83 |
Process latitude of positive and negative resist systems for direct write Ebeam lithography
|
Hintermaier, M.
|
|
1991
|
13 |
1-4 |
p. 105-108
4 p.
|
artikel
|
| 84 |
Profile abnormality in a chemical amplification resist system
|
Suga, Osamu
|
|
1991
|
13 |
1-4 |
p. 65-68
4 p.
|
artikel
|
| 85 |
Progress in E-beam mask making for optical and x-ray lithography
|
Pfeiffer, Hans C.
|
|
1991
|
13 |
1-4 |
p. 141-149
9 p.
|
artikel
|
| 86 |
Promote processing with JSR-7750 positive photoresist
|
Vollenbroek, F.A.
|
|
1991
|
13 |
1-4 |
p. 79-84
6 p.
|
artikel
|
| 87 |
Proximity E-beam exposure in submicron patterns using a silylation process
|
Vachette, Thierry G.
|
|
1991
|
13 |
1-4 |
p. 205-208
4 p.
|
artikel
|
| 88 |
Reactive ion etching of multilayer mirrors for X-ray projection lithography masks
|
Malek, C.Khan
|
|
1991
|
13 |
1-4 |
p. 283-286
4 p.
|
artikel
|
| 89 |
Realization of deep-submicron MOSFETS by lateral etching
|
Burmester, R.
|
|
1991
|
13 |
1-4 |
p. 473-476
4 p.
|
artikel
|
| 90 |
Reconstruction of topographies from multiple SEM views
|
Janssen, Reinhard
|
|
1991
|
13 |
1-4 |
p. 531-534
4 p.
|
artikel
|
| 91 |
Repair of opaque X-ray mask defects: Application and resolution
|
Schaffer, Holger
|
|
1991
|
13 |
1-4 |
p. 275-278
4 p.
|
artikel
|
| 92 |
Self-aligned phase shifting mask for contact hole fabrication
|
Todokoro, Y.
|
|
1991
|
13 |
1-4 |
p. 131-134
4 p.
|
artikel
|
| 93 |
Simulation of defects in 3-dimensional resist profiles in optical lithography
|
Henke, W.
|
|
1991
|
13 |
1-4 |
p. 497-501
5 p.
|
artikel
|
| 94 |
Statistical expert systems for process control and error detection for VLSI
|
Arshak, K.
|
|
1991
|
13 |
1-4 |
p. 541-546
6 p.
|
artikel
|
| 95 |
Status of the compact synchrotron radiation source cosy and first exposure experiments
|
Schmidt, M.
|
|
1991
|
13 |
1-4 |
p. 291-294
4 p.
|
artikel
|
| 96 |
Submicrometer photolithography by surface imaging - experiment and simulation
|
Bauch, L.
|
|
1991
|
13 |
1-4 |
p. 89-92
4 p.
|
artikel
|
| 97 |
Submicron patterning of Nb using CF3Br and a single layer resist
|
de Boer, M.J.
|
|
1991
|
13 |
1-4 |
p. 463-467
5 p.
|
artikel
|
| 98 |
Substituted polyhydroxystyrenes as matrix resins for chemically amplified deep UV resist materials
|
Pawlowski, Georg
|
|
1991
|
13 |
1-4 |
p. 29-32
4 p.
|
artikel
|
| 99 |
Surface imaging techniques
|
Roland, B.
|
|
1991
|
13 |
1-4 |
p. 11-18
8 p.
|
artikel
|
| 100 |
Temperature effects in a RIPE reactor
|
Petri, Richard
|
|
1991
|
13 |
1-4 |
p. 459-462
4 p.
|
artikel
|
| 101 |
The application of electron beam lithography to device fabrication for optical communication systems
|
Jones, ME
|
|
1991
|
13 |
1-4 |
p. 385-390
6 p.
|
artikel
|
| 102 |
The electron beam proximity printing lithography, a candidate for the 0.35 and 0.25 micron chip generations
|
Behringer, U.
|
|
1991
|
13 |
1-4 |
p. 361-364
4 p.
|
artikel
|
| 103 |
The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE
|
Yun, Sun Jin
|
|
1991
|
13 |
1-4 |
p. 115-118
4 p.
|
artikel
|
| 104 |
The modelling and simulation of nonlinear photobleaching materials
|
Loong, Wen-an
|
|
1991
|
13 |
1-4 |
p. 493-496
4 p.
|
artikel
|
| 105 |
The proximity effect in electron beam nanolithography
|
Browne, M.T.
|
|
1991
|
13 |
1-4 |
p. 221-224
4 p.
|
artikel
|
| 106 |
Thermal effects in silicon membrane masks under E-beam irradiation
|
Meissner, K.
|
|
1991
|
13 |
1-4 |
p. 177-180
4 p.
|
artikel
|
| 107 |
The role of self diffusion in the dry development and plasma durability of polymers
|
Paniez, P.J.
|
|
1991
|
13 |
1-4 |
p. 57-60
4 p.
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artikel
|
| 108 |
Thickness inhomogeneity during silicon X-ray mask membrane fabrication: Generation and prevention
|
Löchel, B.
|
|
1991
|
13 |
1-4 |
p. 267-270
4 p.
|
artikel
|
| 109 |
Three-dimensional simulation of ion-enhanced dry-etch processes
|
Pelka, Joachim
|
|
1991
|
13 |
1-4 |
p. 487-491
5 p.
|
artikel
|
| 110 |
Ti- and Be-X-ray masks with alignment windows for the LIGA process
|
Schomburg, W.K.
|
|
1991
|
13 |
1-4 |
p. 323-326
4 p.
|
artikel
|
| 111 |
Time temperature and other process variables in the warm water Intermediate Development Bake
|
Samarakone, Nandasiri
|
|
1991
|
13 |
1-4 |
p. 85-88
4 p.
|
artikel
|
| 112 |
Trench process with HBr chemistry in ripe
|
Francou, Jean-Marc
|
|
1991
|
13 |
1-4 |
p. 425-428
4 p.
|
artikel
|
| 113 |
Ultrasensitive chemically amplified resist systems
|
Sachdev, H.
|
|
1991
|
13 |
1-4 |
p. 19-22
4 p.
|
artikel
|
| 114 |
Wet and dry etching experience for sensor micromachining
|
Puers, B.
|
|
1991
|
13 |
1-4 |
p. 443-446
4 p.
|
artikel
|
| 115 |
What is the optimum exposure dose for a positive resist containing poly-functional photoactive compound?
|
Trefonas III, Peter
|
|
1991
|
13 |
1-4 |
p. 109-114
6 p.
|
artikel
|
| 116 |
Writing errors in an optical reticle writer
|
Sandström, T.
|
|
1991
|
13 |
1-4 |
p. 135-138
4 p.
|
artikel
|
| 117 |
X-ray induced damage studies in SIC X-ray lithography mask membranes
|
Redaelli, R.
|
|
1991
|
13 |
1-4 |
p. 263-266
4 p.
|
artikel
|
| 118 |
X-ray mask distortion due to radiation damage
|
Acosta, R.E.
|
|
1991
|
13 |
1-4 |
p. 259-262
4 p.
|
artikel
|
| 119 |
X-ray masks with large-area 100nm-period gratings for quantum-effect device applications
|
Yen, A.
|
|
1991
|
13 |
1-4 |
p. 271-274
4 p.
|
artikel
|
| 120 |
X-ray mask technology: Low stress tungsten deposition and sub-half-micron absorber fabrication by single-layer resist
|
Suzuki, K.
|
|
1991
|
13 |
1-4 |
p. 255-258
4 p.
|
artikel
|
| 121 |
X-ray microlithography with a transition radiation source
|
Goedtkindt, P.
|
|
1991
|
13 |
1-4 |
p. 327-330
4 p.
|
artikel
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