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                             120 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absence of Wannier–Stark ladders in finite superlattices Pereyra, P.
2005
3-6 p. 401-403
3 p.
artikel
2 AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices Mani, R.G.
2005
3-6 p. 366-368
3 p.
artikel
3 A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps Sun, G.
2005
3-6 p. 183-185
3 p.
artikel
4 Acoustical phonon dephasing in GaAs quantum dots Ikeda, K.
2005
3-6 p. 247-249
3 p.
artikel
5 AlGaAs/InGaAs PHEMT with multiple quantum wire gates Lee, Jhang W.
2005
3-6 p. 389-391
3 p.
artikel
6 Aluminum oxide tunnel barriers for single electron memory devices Yadavalli, Kameshwar K.
2005
3-6 p. 272-276
5 p.
artikel
7 Analytical model of micromachining of brittle materials with sharp particles Moktadir, Z.
2005
3-6 p. 608-611
4 p.
artikel
8 A new type of scanning probe microscope: combination between an electrometer and a THz microscope Kawano, Y.
2005
3-6 p. 592-595
4 p.
artikel
9 Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field Orlov, M.L.
2005
3-6 p. 396-400
5 p.
artikel
10 Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe Alfaro-Martínez, Adrián
2005
3-6 p. 362-365
4 p.
artikel
11 A novel chemical molecular beam deposition method for fabrication of II–VI low dimensional structures Razykov, T.M.
2005
3-6 p. 599-600
2 p.
artikel
12 Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy Andreev, A.
2005
3-6 p. 237-240
4 p.
artikel
13 Breakdown of Anderson localization in disordered quantum chains Shima, Hiroyuki
2005
3-6 p. 422-424
3 p.
artikel
14 Calculation of electronic properties in Al x Ga1−x delta-doped systems Gaggero-Sager, L.M.
2005
3-6 p. 416-418
3 p.
artikel
15 Catalytic CVD production of carbon nanotubes using ethanol Ortega-Cervantez, G.
2005
3-6 p. 495-498
4 p.
artikel
16 Charge buildup effects in asymmetric p-type resonant tunneling diodes Galvão Gobato, Y.
2005
3-6 p. 356-358
3 p.
artikel
17 Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques Prutskij, Tatiana
2005
3-6 p. 374-378
5 p.
artikel
18 Confinement effect on the intradonor 1s–2p+ transition energies in GaN quantum wells de Almeida, R.B.
2005
3-6 p. 431-433
3 p.
artikel
19 Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers Ivina, N.L.
2005
3-6 p. 338-341
4 p.
artikel
20 Crystal size dependence of the persistent phosphorescence in Sr2ZnSi2O7: Eu2+, Dy3+ Wang, Xiao-jun
2005
3-6 p. 546-548
3 p.
artikel
21 Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission Sun, G.
2005
3-6 p. 450-452
3 p.
artikel
22 Design of beam splitters and microlasers using chaotic waveguides Bendix, O.
2005
3-6 p. 285-288
4 p.
artikel
23 Design of InAs/Ga(In)Sb superlattices for infrared sensing Brown, G.J.
2005
3-6 p. 256-259
4 p.
artikel
24 Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment Hwang, S.H.
2005
3-6 p. 203-206
4 p.
artikel
25 Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells Croke, E.T.
2005
3-6 p. 379-382
4 p.
artikel
26 Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect Hang, D.R.
2005
3-6 p. 469-471
3 p.
artikel
27 Electroluminescence from B- and P-doped silicon nanoclusters Ovchinnikov, V.
2005
3-6 p. 502-505
4 p.
artikel
28 Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure Duque, C.A.
2005
3-6 p. 231-233
3 p.
artikel
29 Electronic transport and interfering phenomena induced by transverse electric field Pereyra, P.
2005
3-6 p. 419-421
3 p.
artikel
30 Enhanced orientation of interacting polar molecules Shima, Hiroyuki
2005
3-6 p. 586-588
3 p.
artikel
31 Epitaxial growth of non-cubic silicon Fissel, A.
2005
3-6 p. 506-509
4 p.
artikel
32 Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel Liang, C.-T.
2005
3-6 p. 331-333
3 p.
artikel
33 Excited states and infrared transition energies of a donor impurity in cylindrical GaAs–Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field Villamil, Pablo
2005
3-6 p. 383-388
6 p.
artikel
34 Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material Singh, S.P.
2005
3-6 p. 491-494
4 p.
artikel
35 Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET Clarke, W.R.
2005
3-6 p. 327-330
4 p.
artikel
36 Formation and evolution of strain-induced self-assembled dot Hanada, Takashi
2005
3-6 p. 216-218
3 p.
artikel
37 GaN nanodot fabrication by implant source growth Buckmaster, R.
2005
3-6 p. 456-459
4 p.
artikel
38 Gated hybrid Hall effect device on silicon Das Kanungo, Pratyush
2005
3-6 p. 294-297
4 p.
artikel
39 Gaussian superlattice for phonons Villegas, Diosdado
2005
3-6 p. 411-412
2 p.
artikel
40 Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing Heng, C.L.
2005
3-6 p. 531-535
5 p.
artikel
41 Growth and characterisation of ZnO quantum dots in polyacrylamide Dantas, N.O.
2005
3-6 p. 234-236
3 p.
artikel
42 Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films Blanco, O.
2005
3-6 p. 543-545
3 p.
artikel
43 Heterojunction semiconductor triode—a new vertical device Mil'shtein, S.
2005
3-6 p. 313-315
3 p.
artikel
44 Heterostructure transistor with tunable gate bias Mil'shtein, S.
2005
3-6 p. 301-303
3 p.
artikel
45 High speed switch using pairs of pHEMTs with shifted gates Mil'shtein, S.
2005
3-6 p. 316-318
3 p.
artikel
46 Hole transport in p-channel Si MOSFETs Krishnan, Santhosh
2005
3-6 p. 323-326
4 p.
artikel
47 How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers Sukhoivanov, I.A.
2005
3-6 p. 264-268
5 p.
artikel
48 Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT Kordoš, P.
2005
3-6 p. 438-441
4 p.
artikel
49 Improved performances of 1.3μm InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition Tasco, V.
2005
3-6 p. 180-182
3 p.
artikel
50 Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices Bezerra, M.G.
2005
3-6 p. 359-361
3 p.
artikel
51 Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy Misiewicz, J.
2005
3-6 p. 442-445
4 p.
artikel
52 Jain–Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime Nemutudi, R.
2005
3-6 p. 425-427
3 p.
artikel
53 Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110) Crespillo, M.L.
2005
3-6 p. 581-585
5 p.
artikel
54 Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures Orlov, L.K.
2005
3-6 p. 518-521
4 p.
artikel
55 Leakage current and ferroelectric memory in Nd and Sm substituted Bi4Ti3O12 films Tomar, M.S.
2005
3-6 p. 574-577
4 p.
artikel
56 Left handed composite materials in the optical range Voskoboynikov, O.
2005
3-6 p. 564-566
3 p.
artikel
57 Lithium intercalation into single-wall carbon nanotube bundles Fagan, Solange B.
2005
3-6 p. 499-501
3 p.
artikel
58 Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN Lozykowski, H.J.
2005
3-6 p. 453-455
3 p.
artikel
59 Mean life times of quasi-bound states in δ-doped GaAs quantum wells Vlaev, S.J.
2005
3-6 p. 347-349
3 p.
artikel
60 Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN Sherliker, B.
2005
3-6 p. 223-226
4 p.
artikel
61 Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence Iñarrea, Jesús
2005
3-6 p. 334-337
4 p.
artikel
62 ‘Mobility gap’ of a spin-split GaAs two-dimensional electron gas Huang, Tsai-Yu
2005
3-6 p. 466-468
3 p.
artikel
63 Molecular conduction using the parameter-free bond-pair model Bolcatto, P.G.
2005
3-6 p. 605-607
3 p.
artikel
64 Morphology and electrical resistivity of metallic nanostructures Camacho, Juan M.
2005
3-6 p. 555-558
4 p.
artikel
65 Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power Torchynska, T.V.
2005
3-6 p. 186-189
4 p.
artikel
66 Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities Frederick, S.
2005
3-6 p. 197-199
3 p.
artikel
67 Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO2 sol–gel nanofilms Tomás, S.A.
2005
3-6 p. 570-573
4 p.
artikel
68 Optical and electronic properties of AlInGaN/InGaN superlattices Rodrigues, S.C.P.
2005
3-6 p. 434-437
4 p.
artikel
69 Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3μm Monte, A.F.G.
2005
3-6 p. 194-196
3 p.
artikel
70 Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5μm laser diodes Yim, J.S.
2005
3-6 p. 190-193
4 p.
artikel
71 Optical investigation of Si nano-crystals in amorphous silicon matrix Vivas Hernandez, A.
2005
3-6 p. 510-513
4 p.
artikel
72 Optical phonon modes confinement in quasiperiodic semiconductor superlattice Anselmo, D.H.A.L.
2005
3-6 p. 407-410
4 p.
artikel
73 Optical properties of colloidal nanocrystal spheres and tetrapods De Giorgi, M.
2005
3-6 p. 552-554
3 p.
artikel
74 Optical properties of porous silicon surface Chambon, E.
2005
3-6 p. 514-517
4 p.
artikel
75 Optical pulse shaping capabilities of grating-assisted codirectional couplers Azaña, José
2005
3-6 p. 289-293
5 p.
artikel
76 Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips Luo, Xiangning
2005
3-6 p. 308-312
5 p.
artikel
77 Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells Misiewicz, J.
2005
3-6 p. 446-449
4 p.
artikel
78 Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP Pettersson, H.
2005
3-6 p. 227-230
4 p.
artikel
79 Photoluminescence and Raman spectroscopy in porous SiC Torchynska, T.V.
2005
3-6 p. 536-538
3 p.
artikel
80 Photoluminescence behavior of CdSe on GaAsOx/GaAs substrates Ozasa, Kazunari
2005
3-6 p. 578-580
3 p.
artikel
81 Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance De Giorgi, M.
2005
3-6 p. 200-202
3 p.
artikel
82 Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device Kwon, O'Dae
2005
3-6 p. 298-300
3 p.
artikel
83 Preface Henini, Mohamed
2005
3-6 p. 173-174
2 p.
artikel
84 Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs–AlGaAs quantum wells Beltrán Ríos, Carlos L.
2005
3-6 p. 369-373
5 p.
artikel
85 Propagation of light in quasi-regular dielectric heterostructures with delta-like layers Mora-Ramos, M.E.
2005
3-6 p. 413-415
3 p.
artikel
86 Propagation of polaritons in coaxial multi-shell cylinders Nobre, E.F.
2005
3-6 p. 589-591
3 p.
artikel
87 Quantum capture area in layered quantum well structures Shulika, Oleksiy V.
2005
3-6 p. 350-355
6 p.
artikel
88 Quantum dot photonic devices for lightwave communication Bimberg, Dieter
2005
3-6 p. 175-179
5 p.
artikel
89 Quantum feedback of a double-dot qubit Korotkov, Alexander N.
2005
3-6 p. 253-255
3 p.
artikel
90 Quantum-size effects in SERS from noble-metal nanoparticles Pustovit, Vitaliy N.
2005
3-6 p. 559-563
5 p.
artikel
91 Realisation of ultra-low loss photonic crystal slab waveguide devices Charlton, M.D.B.
2005
3-6 p. 277-281
5 p.
artikel
92 Roughness and nanoholes in sol–gel thin films Antunes, A.
2005
3-6 p. 567-569
3 p.
artikel
93 Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication Raimundo, Daniel S.
2005
3-6 p. 207-211
5 p.
artikel
94 Self-consistent analysis of the miniband structures in superlattice quantum wires Yi, Jong Chang
2005
3-6 p. 392-395
4 p.
artikel
95 Shaping electrical field in heterostructure transistors Mil'shtein, S.
2005
3-6 p. 319-322
4 p.
artikel
96 Slow light in photonic crystals Chu, Jiun Haw
2005
3-6 p. 282-284
3 p.
artikel
97 Spin carrier dynamics under full spin–orbit coupling Marques, G.E.
2005
3-6 p. 480-483
4 p.
artikel
98 Spin ordering in chromium layered structures with inserted nonmagnetic monolayers Navarro, O.
2005
3-6 p. 472-474
3 p.
artikel
99 Spin-polarized charge fluctuations in magnetic tunneling diodes Bittencourt, A.C.
2005
3-6 p. 463-465
3 p.
artikel
100 Spin-polarized tunneling in an electromagnetic structure Seo, K.C.
2005
3-6 p. 484-487
4 p.
artikel
101 Spin relaxation due to the phonon modulation of the spin–orbit interaction in quantum dots Alcalde, A.M.
2005
3-6 p. 241-243
3 p.
artikel
102 Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures Ashok, Ashwin
2005
3-6 p. 460-462
3 p.
artikel
103 Stability issues in tunneling via quantum systems Tsu, Raphael
2005
3-6 p. 212-215
4 p.
artikel
104 Stark effect on a geometry defined by a cake's slice Reyes-Esqueda, Jorge-Alejandro
2005
3-6 p. 596-598
3 p.
artikel
105 Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning Morelhão, S.L.
2005
3-6 p. 219-222
4 p.
artikel
106 Structure and photo-induced features of TiO2 thin films prepared by RF magnetron sputtering Zhao, Xiu-Tian
2005
3-6 p. 549-551
3 p.
artikel
107 Study and development of a silicon infrared diode operating under forward bias El Tahchi, M.
2005
3-6 p. 260-263
4 p.
artikel
108 Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys Salcedo-Reyes, J.C.
2005
3-6 p. 342-346
5 p.
artikel
109 Synthesis and magnetic behavior of nanostructured ferrites for spintronics Tomar, M.S.
2005
3-6 p. 475-479
5 p.
artikel
110 Temperature dependence of the locked mode in a single-electron latch Kummamuru, Ravi K.
2005
3-6 p. 304-307
4 p.
artikel
111 The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/Al x Ga1−x as quantum dots Osório, F.A.P.
2005
3-6 p. 244-246
3 p.
artikel
112 The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques Sahiner, M. Alper
2005
3-6 p. 522-526
5 p.
artikel
113 The mechanism of interlayer exchange coupling in silicon/iron layered structures Tugushev, V.
2005
3-6 p. 488-490
3 p.
artikel
114 Thermal quenching of the self-activated band of ZnSe:Cl thin films grown by molecular beam epitaxy Martínez-Cantón, A.E.
2005
3-6 p. 527-530
4 p.
artikel
115 The superconductor proximity effect in Au–YBa2Cu3O7−δ bilayer films: the role of order parameter anisotropy Millo, O.
2005
3-6 p. 539-542
4 p.
artikel
116 Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations Rodríguez-Vargas, I.
2005
3-6 p. 404-406
3 p.
artikel
117 Three-dimensional quantum dot array Daneshvar, K.
2005
3-6 p. 250-252
3 p.
artikel
118 Time response of a highly sensitive and tunable THz detector using the quantum hall effect Takase, Keiko
2005
3-6 p. 269-271
3 p.
artikel
119 Transport measurements on MOVPE-grown InN films Chen, Shang-Chia
2005
3-6 p. 428-430
3 p.
artikel
120 Wavelet analysis of coarsening during unstable MBE growth Moktadir, Z.
2005
3-6 p. 601-604
4 p.
artikel
                             120 gevonden resultaten
 
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