nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Absence of Wannier–Stark ladders in finite superlattices
|
Pereyra, P. |
|
2005 |
|
3-6 |
p. 401-403 3 p. |
artikel |
2 |
AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices
|
Mani, R.G. |
|
2005 |
|
3-6 |
p. 366-368 3 p. |
artikel |
3 |
A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps
|
Sun, G. |
|
2005 |
|
3-6 |
p. 183-185 3 p. |
artikel |
4 |
Acoustical phonon dephasing in GaAs quantum dots
|
Ikeda, K. |
|
2005 |
|
3-6 |
p. 247-249 3 p. |
artikel |
5 |
AlGaAs/InGaAs PHEMT with multiple quantum wire gates
|
Lee, Jhang W. |
|
2005 |
|
3-6 |
p. 389-391 3 p. |
artikel |
6 |
Aluminum oxide tunnel barriers for single electron memory devices
|
Yadavalli, Kameshwar K. |
|
2005 |
|
3-6 |
p. 272-276 5 p. |
artikel |
7 |
Analytical model of micromachining of brittle materials with sharp particles
|
Moktadir, Z. |
|
2005 |
|
3-6 |
p. 608-611 4 p. |
artikel |
8 |
A new type of scanning probe microscope: combination between an electrometer and a THz microscope
|
Kawano, Y. |
|
2005 |
|
3-6 |
p. 592-595 4 p. |
artikel |
9 |
Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field
|
Orlov, M.L. |
|
2005 |
|
3-6 |
p. 396-400 5 p. |
artikel |
10 |
Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe
|
Alfaro-Martínez, Adrián |
|
2005 |
|
3-6 |
p. 362-365 4 p. |
artikel |
11 |
A novel chemical molecular beam deposition method for fabrication of II–VI low dimensional structures
|
Razykov, T.M. |
|
2005 |
|
3-6 |
p. 599-600 2 p. |
artikel |
12 |
Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy
|
Andreev, A. |
|
2005 |
|
3-6 |
p. 237-240 4 p. |
artikel |
13 |
Breakdown of Anderson localization in disordered quantum chains
|
Shima, Hiroyuki |
|
2005 |
|
3-6 |
p. 422-424 3 p. |
artikel |
14 |
Calculation of electronic properties in Al x Ga1−x delta-doped systems
|
Gaggero-Sager, L.M. |
|
2005 |
|
3-6 |
p. 416-418 3 p. |
artikel |
15 |
Catalytic CVD production of carbon nanotubes using ethanol
|
Ortega-Cervantez, G. |
|
2005 |
|
3-6 |
p. 495-498 4 p. |
artikel |
16 |
Charge buildup effects in asymmetric p-type resonant tunneling diodes
|
Galvão Gobato, Y. |
|
2005 |
|
3-6 |
p. 356-358 3 p. |
artikel |
17 |
Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques
|
Prutskij, Tatiana |
|
2005 |
|
3-6 |
p. 374-378 5 p. |
artikel |
18 |
Confinement effect on the intradonor 1s–2p+ transition energies in GaN quantum wells
|
de Almeida, R.B. |
|
2005 |
|
3-6 |
p. 431-433 3 p. |
artikel |
19 |
Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers
|
Ivina, N.L. |
|
2005 |
|
3-6 |
p. 338-341 4 p. |
artikel |
20 |
Crystal size dependence of the persistent phosphorescence in Sr2ZnSi2O7: Eu2+, Dy3+
|
Wang, Xiao-jun |
|
2005 |
|
3-6 |
p. 546-548 3 p. |
artikel |
21 |
Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission
|
Sun, G. |
|
2005 |
|
3-6 |
p. 450-452 3 p. |
artikel |
22 |
Design of beam splitters and microlasers using chaotic waveguides
|
Bendix, O. |
|
2005 |
|
3-6 |
p. 285-288 4 p. |
artikel |
23 |
Design of InAs/Ga(In)Sb superlattices for infrared sensing
|
Brown, G.J. |
|
2005 |
|
3-6 |
p. 256-259 4 p. |
artikel |
24 |
Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment
|
Hwang, S.H. |
|
2005 |
|
3-6 |
p. 203-206 4 p. |
artikel |
25 |
Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells
|
Croke, E.T. |
|
2005 |
|
3-6 |
p. 379-382 4 p. |
artikel |
26 |
Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect
|
Hang, D.R. |
|
2005 |
|
3-6 |
p. 469-471 3 p. |
artikel |
27 |
Electroluminescence from B- and P-doped silicon nanoclusters
|
Ovchinnikov, V. |
|
2005 |
|
3-6 |
p. 502-505 4 p. |
artikel |
28 |
Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure
|
Duque, C.A. |
|
2005 |
|
3-6 |
p. 231-233 3 p. |
artikel |
29 |
Electronic transport and interfering phenomena induced by transverse electric field
|
Pereyra, P. |
|
2005 |
|
3-6 |
p. 419-421 3 p. |
artikel |
30 |
Enhanced orientation of interacting polar molecules
|
Shima, Hiroyuki |
|
2005 |
|
3-6 |
p. 586-588 3 p. |
artikel |
31 |
Epitaxial growth of non-cubic silicon
|
Fissel, A. |
|
2005 |
|
3-6 |
p. 506-509 4 p. |
artikel |
32 |
Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel
|
Liang, C.-T. |
|
2005 |
|
3-6 |
p. 331-333 3 p. |
artikel |
33 |
Excited states and infrared transition energies of a donor impurity in cylindrical GaAs–Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field
|
Villamil, Pablo |
|
2005 |
|
3-6 |
p. 383-388 6 p. |
artikel |
34 |
Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material
|
Singh, S.P. |
|
2005 |
|
3-6 |
p. 491-494 4 p. |
artikel |
35 |
Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET
|
Clarke, W.R. |
|
2005 |
|
3-6 |
p. 327-330 4 p. |
artikel |
36 |
Formation and evolution of strain-induced self-assembled dot
|
Hanada, Takashi |
|
2005 |
|
3-6 |
p. 216-218 3 p. |
artikel |
37 |
GaN nanodot fabrication by implant source growth
|
Buckmaster, R. |
|
2005 |
|
3-6 |
p. 456-459 4 p. |
artikel |
38 |
Gated hybrid Hall effect device on silicon
|
Das Kanungo, Pratyush |
|
2005 |
|
3-6 |
p. 294-297 4 p. |
artikel |
39 |
Gaussian superlattice for phonons
|
Villegas, Diosdado |
|
2005 |
|
3-6 |
p. 411-412 2 p. |
artikel |
40 |
Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing
|
Heng, C.L. |
|
2005 |
|
3-6 |
p. 531-535 5 p. |
artikel |
41 |
Growth and characterisation of ZnO quantum dots in polyacrylamide
|
Dantas, N.O. |
|
2005 |
|
3-6 |
p. 234-236 3 p. |
artikel |
42 |
Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films
|
Blanco, O. |
|
2005 |
|
3-6 |
p. 543-545 3 p. |
artikel |
43 |
Heterojunction semiconductor triode—a new vertical device
|
Mil'shtein, S. |
|
2005 |
|
3-6 |
p. 313-315 3 p. |
artikel |
44 |
Heterostructure transistor with tunable gate bias
|
Mil'shtein, S. |
|
2005 |
|
3-6 |
p. 301-303 3 p. |
artikel |
45 |
High speed switch using pairs of pHEMTs with shifted gates
|
Mil'shtein, S. |
|
2005 |
|
3-6 |
p. 316-318 3 p. |
artikel |
46 |
Hole transport in p-channel Si MOSFETs
|
Krishnan, Santhosh |
|
2005 |
|
3-6 |
p. 323-326 4 p. |
artikel |
47 |
How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers
|
Sukhoivanov, I.A. |
|
2005 |
|
3-6 |
p. 264-268 5 p. |
artikel |
48 |
Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT
|
Kordoš, P. |
|
2005 |
|
3-6 |
p. 438-441 4 p. |
artikel |
49 |
Improved performances of 1.3μm InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition
|
Tasco, V. |
|
2005 |
|
3-6 |
p. 180-182 3 p. |
artikel |
50 |
Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices
|
Bezerra, M.G. |
|
2005 |
|
3-6 |
p. 359-361 3 p. |
artikel |
51 |
Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy
|
Misiewicz, J. |
|
2005 |
|
3-6 |
p. 442-445 4 p. |
artikel |
52 |
Jain–Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime
|
Nemutudi, R. |
|
2005 |
|
3-6 |
p. 425-427 3 p. |
artikel |
53 |
Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110)
|
Crespillo, M.L. |
|
2005 |
|
3-6 |
p. 581-585 5 p. |
artikel |
54 |
Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures
|
Orlov, L.K. |
|
2005 |
|
3-6 |
p. 518-521 4 p. |
artikel |
55 |
Leakage current and ferroelectric memory in Nd and Sm substituted Bi4Ti3O12 films
|
Tomar, M.S. |
|
2005 |
|
3-6 |
p. 574-577 4 p. |
artikel |
56 |
Left handed composite materials in the optical range
|
Voskoboynikov, O. |
|
2005 |
|
3-6 |
p. 564-566 3 p. |
artikel |
57 |
Lithium intercalation into single-wall carbon nanotube bundles
|
Fagan, Solange B. |
|
2005 |
|
3-6 |
p. 499-501 3 p. |
artikel |
58 |
Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN
|
Lozykowski, H.J. |
|
2005 |
|
3-6 |
p. 453-455 3 p. |
artikel |
59 |
Mean life times of quasi-bound states in δ-doped GaAs quantum wells
|
Vlaev, S.J. |
|
2005 |
|
3-6 |
p. 347-349 3 p. |
artikel |
60 |
Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN
|
Sherliker, B. |
|
2005 |
|
3-6 |
p. 223-226 4 p. |
artikel |
61 |
Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence
|
Iñarrea, Jesús |
|
2005 |
|
3-6 |
p. 334-337 4 p. |
artikel |
62 |
‘Mobility gap’ of a spin-split GaAs two-dimensional electron gas
|
Huang, Tsai-Yu |
|
2005 |
|
3-6 |
p. 466-468 3 p. |
artikel |
63 |
Molecular conduction using the parameter-free bond-pair model
|
Bolcatto, P.G. |
|
2005 |
|
3-6 |
p. 605-607 3 p. |
artikel |
64 |
Morphology and electrical resistivity of metallic nanostructures
|
Camacho, Juan M. |
|
2005 |
|
3-6 |
p. 555-558 4 p. |
artikel |
65 |
Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power
|
Torchynska, T.V. |
|
2005 |
|
3-6 |
p. 186-189 4 p. |
artikel |
66 |
Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities
|
Frederick, S. |
|
2005 |
|
3-6 |
p. 197-199 3 p. |
artikel |
67 |
Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO2 sol–gel nanofilms
|
Tomás, S.A. |
|
2005 |
|
3-6 |
p. 570-573 4 p. |
artikel |
68 |
Optical and electronic properties of AlInGaN/InGaN superlattices
|
Rodrigues, S.C.P. |
|
2005 |
|
3-6 |
p. 434-437 4 p. |
artikel |
69 |
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3μm
|
Monte, A.F.G. |
|
2005 |
|
3-6 |
p. 194-196 3 p. |
artikel |
70 |
Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5μm laser diodes
|
Yim, J.S. |
|
2005 |
|
3-6 |
p. 190-193 4 p. |
artikel |
71 |
Optical investigation of Si nano-crystals in amorphous silicon matrix
|
Vivas Hernandez, A. |
|
2005 |
|
3-6 |
p. 510-513 4 p. |
artikel |
72 |
Optical phonon modes confinement in quasiperiodic semiconductor superlattice
|
Anselmo, D.H.A.L. |
|
2005 |
|
3-6 |
p. 407-410 4 p. |
artikel |
73 |
Optical properties of colloidal nanocrystal spheres and tetrapods
|
De Giorgi, M. |
|
2005 |
|
3-6 |
p. 552-554 3 p. |
artikel |
74 |
Optical properties of porous silicon surface
|
Chambon, E. |
|
2005 |
|
3-6 |
p. 514-517 4 p. |
artikel |
75 |
Optical pulse shaping capabilities of grating-assisted codirectional couplers
|
Azaña, José |
|
2005 |
|
3-6 |
p. 289-293 5 p. |
artikel |
76 |
Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips
|
Luo, Xiangning |
|
2005 |
|
3-6 |
p. 308-312 5 p. |
artikel |
77 |
Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells
|
Misiewicz, J. |
|
2005 |
|
3-6 |
p. 446-449 4 p. |
artikel |
78 |
Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP
|
Pettersson, H. |
|
2005 |
|
3-6 |
p. 227-230 4 p. |
artikel |
79 |
Photoluminescence and Raman spectroscopy in porous SiC
|
Torchynska, T.V. |
|
2005 |
|
3-6 |
p. 536-538 3 p. |
artikel |
80 |
Photoluminescence behavior of CdSe on GaAsOx/GaAs substrates
|
Ozasa, Kazunari |
|
2005 |
|
3-6 |
p. 578-580 3 p. |
artikel |
81 |
Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance
|
De Giorgi, M. |
|
2005 |
|
3-6 |
p. 200-202 3 p. |
artikel |
82 |
Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device
|
Kwon, O'Dae |
|
2005 |
|
3-6 |
p. 298-300 3 p. |
artikel |
83 |
Preface
|
Henini, Mohamed |
|
2005 |
|
3-6 |
p. 173-174 2 p. |
artikel |
84 |
Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs–AlGaAs quantum wells
|
Beltrán Ríos, Carlos L. |
|
2005 |
|
3-6 |
p. 369-373 5 p. |
artikel |
85 |
Propagation of light in quasi-regular dielectric heterostructures with delta-like layers
|
Mora-Ramos, M.E. |
|
2005 |
|
3-6 |
p. 413-415 3 p. |
artikel |
86 |
Propagation of polaritons in coaxial multi-shell cylinders
|
Nobre, E.F. |
|
2005 |
|
3-6 |
p. 589-591 3 p. |
artikel |
87 |
Quantum capture area in layered quantum well structures
|
Shulika, Oleksiy V. |
|
2005 |
|
3-6 |
p. 350-355 6 p. |
artikel |
88 |
Quantum dot photonic devices for lightwave communication
|
Bimberg, Dieter |
|
2005 |
|
3-6 |
p. 175-179 5 p. |
artikel |
89 |
Quantum feedback of a double-dot qubit
|
Korotkov, Alexander N. |
|
2005 |
|
3-6 |
p. 253-255 3 p. |
artikel |
90 |
Quantum-size effects in SERS from noble-metal nanoparticles
|
Pustovit, Vitaliy N. |
|
2005 |
|
3-6 |
p. 559-563 5 p. |
artikel |
91 |
Realisation of ultra-low loss photonic crystal slab waveguide devices
|
Charlton, M.D.B. |
|
2005 |
|
3-6 |
p. 277-281 5 p. |
artikel |
92 |
Roughness and nanoholes in sol–gel thin films
|
Antunes, A. |
|
2005 |
|
3-6 |
p. 567-569 3 p. |
artikel |
93 |
Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication
|
Raimundo, Daniel S. |
|
2005 |
|
3-6 |
p. 207-211 5 p. |
artikel |
94 |
Self-consistent analysis of the miniband structures in superlattice quantum wires
|
Yi, Jong Chang |
|
2005 |
|
3-6 |
p. 392-395 4 p. |
artikel |
95 |
Shaping electrical field in heterostructure transistors
|
Mil'shtein, S. |
|
2005 |
|
3-6 |
p. 319-322 4 p. |
artikel |
96 |
Slow light in photonic crystals
|
Chu, Jiun Haw |
|
2005 |
|
3-6 |
p. 282-284 3 p. |
artikel |
97 |
Spin carrier dynamics under full spin–orbit coupling
|
Marques, G.E. |
|
2005 |
|
3-6 |
p. 480-483 4 p. |
artikel |
98 |
Spin ordering in chromium layered structures with inserted nonmagnetic monolayers
|
Navarro, O. |
|
2005 |
|
3-6 |
p. 472-474 3 p. |
artikel |
99 |
Spin-polarized charge fluctuations in magnetic tunneling diodes
|
Bittencourt, A.C. |
|
2005 |
|
3-6 |
p. 463-465 3 p. |
artikel |
100 |
Spin-polarized tunneling in an electromagnetic structure
|
Seo, K.C. |
|
2005 |
|
3-6 |
p. 484-487 4 p. |
artikel |
101 |
Spin relaxation due to the phonon modulation of the spin–orbit interaction in quantum dots
|
Alcalde, A.M. |
|
2005 |
|
3-6 |
p. 241-243 3 p. |
artikel |
102 |
Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures
|
Ashok, Ashwin |
|
2005 |
|
3-6 |
p. 460-462 3 p. |
artikel |
103 |
Stability issues in tunneling via quantum systems
|
Tsu, Raphael |
|
2005 |
|
3-6 |
p. 212-215 4 p. |
artikel |
104 |
Stark effect on a geometry defined by a cake's slice
|
Reyes-Esqueda, Jorge-Alejandro |
|
2005 |
|
3-6 |
p. 596-598 3 p. |
artikel |
105 |
Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning
|
Morelhão, S.L. |
|
2005 |
|
3-6 |
p. 219-222 4 p. |
artikel |
106 |
Structure and photo-induced features of TiO2 thin films prepared by RF magnetron sputtering
|
Zhao, Xiu-Tian |
|
2005 |
|
3-6 |
p. 549-551 3 p. |
artikel |
107 |
Study and development of a silicon infrared diode operating under forward bias
|
El Tahchi, M. |
|
2005 |
|
3-6 |
p. 260-263 4 p. |
artikel |
108 |
Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys
|
Salcedo-Reyes, J.C. |
|
2005 |
|
3-6 |
p. 342-346 5 p. |
artikel |
109 |
Synthesis and magnetic behavior of nanostructured ferrites for spintronics
|
Tomar, M.S. |
|
2005 |
|
3-6 |
p. 475-479 5 p. |
artikel |
110 |
Temperature dependence of the locked mode in a single-electron latch
|
Kummamuru, Ravi K. |
|
2005 |
|
3-6 |
p. 304-307 4 p. |
artikel |
111 |
The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/Al x Ga1−x as quantum dots
|
Osório, F.A.P. |
|
2005 |
|
3-6 |
p. 244-246 3 p. |
artikel |
112 |
The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques
|
Sahiner, M. Alper |
|
2005 |
|
3-6 |
p. 522-526 5 p. |
artikel |
113 |
The mechanism of interlayer exchange coupling in silicon/iron layered structures
|
Tugushev, V. |
|
2005 |
|
3-6 |
p. 488-490 3 p. |
artikel |
114 |
Thermal quenching of the self-activated band of ZnSe:Cl thin films grown by molecular beam epitaxy
|
Martínez-Cantón, A.E. |
|
2005 |
|
3-6 |
p. 527-530 4 p. |
artikel |
115 |
The superconductor proximity effect in Au–YBa2Cu3O7−δ bilayer films: the role of order parameter anisotropy
|
Millo, O. |
|
2005 |
|
3-6 |
p. 539-542 4 p. |
artikel |
116 |
Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations
|
Rodríguez-Vargas, I. |
|
2005 |
|
3-6 |
p. 404-406 3 p. |
artikel |
117 |
Three-dimensional quantum dot array
|
Daneshvar, K. |
|
2005 |
|
3-6 |
p. 250-252 3 p. |
artikel |
118 |
Time response of a highly sensitive and tunable THz detector using the quantum hall effect
|
Takase, Keiko |
|
2005 |
|
3-6 |
p. 269-271 3 p. |
artikel |
119 |
Transport measurements on MOVPE-grown InN films
|
Chen, Shang-Chia |
|
2005 |
|
3-6 |
p. 428-430 3 p. |
artikel |
120 |
Wavelet analysis of coarsening during unstable MBE growth
|
Moktadir, Z. |
|
2005 |
|
3-6 |
p. 601-604 4 p. |
artikel |