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                                       Details for article 54 of 120 found articles
 
 
  Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures
 
 
Title: Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures
Author: Orlov, L.K.
Ivina, N.L.
Potapov, A.V.
Smyslova, T.N.
Vinogradsky, L.M.
Horvath, Z.J.
Appeared in: Microelectronics journal
Paging: Volume 36 (2005) nr. 3-6 pages 4 p.
Year: 2005
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 54 of 120 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands