| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 0.18μm CMOS linear-in-dB AGC post-amplifier for optical communications
|
Aznar, Francisco
|
|
2011
|
51 |
5 |
p. 959-964
6 p.
|
artikel
|
| 2 |
Analysis of interconnect capacitance for sub nano CMOS technology using the low dielectric material
|
Joshi, Bhavana N.
|
|
2011
|
51 |
5 |
p. 953-958
6 p.
|
artikel
|
| 3 |
An investigation of reliability of solder joints in microelectronic packages by high temperature moiré method
|
Shang, Haixia
|
|
2011
|
51 |
5 |
p. 994-1002
9 p.
|
artikel
|
| 4 |
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs
|
Tachi, Kiichi
|
|
2011
|
51 |
5 |
p. 885-888
4 p.
|
artikel
|
| 5 |
Creep behaviour of Sn–3.8Ag–0.7Cu under the effect of electromigration: Experiments and modelling
|
Su, Fei
|
|
2011
|
51 |
5 |
p. 1020-1024
5 p.
|
artikel
|
| 6 |
Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
|
Poliakov, Pavel
|
|
2011
|
51 |
5 |
p. 919-924
6 p.
|
artikel
|
| 7 |
Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process
|
Weng, Yi-Hsin
|
|
2011
|
51 |
5 |
p. 871-878
8 p.
|
artikel
|
| 8 |
Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method
|
Yi, Ming
|
|
2011
|
51 |
5 |
p. 895-903
9 p.
|
artikel
|
| 9 |
Facetting of the self-assembled droplet epitaxial GaAs quantum dot
|
Nemcsics, Ákos
|
|
2011
|
51 |
5 |
p. 927-930
4 p.
|
artikel
|
| 10 |
Inside front cover - Editorial board
|
|
|
2011
|
51 |
5 |
p. IFC-
1 p.
|
artikel
|
| 11 |
Integration of analytical techniques in stochastic optimization of microsystem reliability
|
Xue, Xiangdong
|
|
2011
|
51 |
5 |
p. 936-945
10 p.
|
artikel
|
| 12 |
Investigation of the heel crack mechanism in Al connections for power electronics modules
|
Celnikier, Y.
|
|
2011
|
51 |
5 |
p. 965-974
10 p.
|
artikel
|
| 13 |
Luminescence properties of mechanically nanoindented ZnSe
|
Yau, Wei-Hung
|
|
2011
|
51 |
5 |
p. 931-935
5 p.
|
artikel
|
| 14 |
Material property effects on solder failure analyses
|
Kim, Yeong K.
|
|
2011
|
51 |
5 |
p. 985-993
9 p.
|
artikel
|
| 15 |
Mechanical behavior of solder joints under dynamic four-point impact bending
|
An, Tong
|
|
2011
|
51 |
5 |
p. 1011-1019
9 p.
|
artikel
|
| 16 |
Microstructure, thermal analysis and hardness of a Sn–Ag–Cu–1wt% nano-TiO2 composite solder on flexible ball grid array substrates
|
Gain, Asit Kumar
|
|
2011
|
51 |
5 |
p. 975-984
10 p.
|
artikel
|
| 17 |
Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity
|
Liu, Hongxia
|
|
2011
|
51 |
5 |
p. 909-913
5 p.
|
artikel
|
| 18 |
NBTI reliability on high-k metal-gate SiGe transistor and circuit performances
|
Yuan, Jiann-Shiun
|
|
2011
|
51 |
5 |
p. 914-918
5 p.
|
artikel
|
| 19 |
Self-consistent design issues for high frequency Cu interconnect reliability incorporating skin effect
|
Yao, Ming
|
|
2011
|
51 |
5 |
p. 1003-1010
8 p.
|
artikel
|
| 20 |
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors
|
Sato, Soshi
|
|
2011
|
51 |
5 |
p. 879-884
6 p.
|
artikel
|
| 21 |
Temperature and voltage aging effects on electrical conduction mechanism in epoxy-BaTiO3 composite dielectric used in embedded capacitors
|
Alam, Mohammed A.
|
|
2011
|
51 |
5 |
p. 946-952
7 p.
|
artikel
|
| 22 |
Thermal stability of SiC Schottky diode anode and cathode metalisations after 1000h at 350°C
|
O’Mahony, Donagh
|
|
2011
|
51 |
5 |
p. 904-908
5 p.
|
artikel
|
| 23 |
The sensitivity of radiation-induced leakage to STI topology and sidewall doping
|
Rezzak, Nadia
|
|
2011
|
51 |
5 |
p. 889-894
6 p.
|
artikel
|
| 24 |
Transient current mechanism of lead zirconate titanate capacitors sputtered on La0.65Sr0.35MnO3
|
Dai, Mingzhi
|
|
2011
|
51 |
5 |
p. 925-926
2 p.
|
artikel
|
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