| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced failure detection techniques in deep submicron CMOS integrated circuits
|
Rubio, Antonio
|
|
1999
|
39 |
6-7 |
p. 909-918
10 p.
|
artikel
|
| 2 |
Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors
|
Rahala, A.
|
|
1999
|
39 |
6-7 |
p. 851-855
5 p.
|
artikel
|
| 3 |
A new AFM-based tool for testing dielectric quality and reliability on a nanometer scale
|
Olbrich, Alexander
|
|
1999
|
39 |
6-7 |
p. 941-946
6 p.
|
artikel
|
| 4 |
A new bifunctional topography and current probe for scanning force microscope testing of integrated circuits
|
Bae, S.
|
|
1999
|
39 |
6-7 |
p. 975-980
6 p.
|
artikel
|
| 5 |
A simpler method for life-testing laser diodes
|
Vanzi, M.
|
|
1999
|
39 |
6-7 |
p. 1067-1071
5 p.
|
artikel
|
| 6 |
Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure distributions
|
Kerber, Martin
|
|
1999
|
39 |
6-7 |
p. 755-758
4 p.
|
artikel
|
| 7 |
A stochastic approach to failure analysis in electromigration phenomena
|
Pennetta, C.
|
|
1999
|
39 |
6-7 |
p. 857-862
6 p.
|
artikel
|
| 8 |
A universal reliability prediction model for SMD integrated circuits based on field failures
|
Kervarrec, G.
|
|
1999
|
39 |
6-7 |
p. 765-771
7 p.
|
artikel
|
| 9 |
Author index
|
|
|
1999
|
39 |
6-7 |
p. I-II
nvt p.
|
artikel
|
| 10 |
Cathodoluminescence from hot electron stressed InP HEMTs
|
Cova, Paolo
|
|
1999
|
39 |
6-7 |
p. 1073-1078
6 p.
|
artikel
|
| 11 |
Contact resistance anomalies of vias before breakdown in accelerated current life tests
|
Gölz, W.L.F.
|
|
1999
|
39 |
6-7 |
p. 1109-1112
4 p.
|
artikel
|
| 12 |
Cross-section analysis of electric devices by scanning capacitance microscope
|
Takasaki, Yoichi
|
|
1999
|
39 |
6-7 |
p. 987-990
4 p.
|
artikel
|
| 13 |
Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices
|
Pogany, D.
|
|
1999
|
39 |
6-7 |
p. 1143-1148
6 p.
|
artikel
|
| 14 |
Defect localization using voltage contrast IDDQ testing
|
Perdu, Philippe
|
|
1999
|
39 |
6-7 |
p. 1021-1026
6 p.
|
artikel
|
| 15 |
Degradation of AlGaAs GaAs power HFET's under on-state and off-state breakdown conditions
|
Dieci, D.
|
|
1999
|
39 |
6-7 |
p. 1055-1060
6 p.
|
artikel
|
| 16 |
Depassivation of latent plasma damage in pMOS devices
|
Pantisano, L.
|
|
1999
|
39 |
6-7 |
p. 827-832
6 p.
|
artikel
|
| 17 |
Device reliability and robust power converter development
|
Keskar, N.
|
|
1999
|
39 |
6-7 |
p. 1121-1130
10 p.
|
artikel
|
| 18 |
2D physical simulation of degradation on transistors induced by FIB exposure of dielectric passivation
|
Benbrik, J.
|
|
1999
|
39 |
6-7 |
p. 1027-1031
5 p.
|
artikel
|
| 19 |
Editorial
|
Labat, Nathalie
|
|
1999
|
39 |
6-7 |
p. ix-x
nvt p.
|
artikel
|
| 20 |
Effects of RF life-test on LF electrical parameters of GaAs power MESFETs
|
Saysset-Malbert, N.
|
|
1999
|
39 |
6-7 |
p. 1061-1066
6 p.
|
artikel
|
| 21 |
Electron Beam Testing of FPGA Circuits
|
Desplats, R.
|
|
1999
|
39 |
6-7 |
p. 963-968
6 p.
|
artikel
|
| 22 |
Enhancing IC repairs by combining laser direct-writing of Cu and FIB techniques
|
Remes, J.
|
|
1999
|
39 |
6-7 |
p. 997-1001
5 p.
|
artikel
|
| 23 |
Evaluation of P-HEMT MMIC technology PH25 for space applications
|
Huguet, P.
|
|
1999
|
39 |
6-7 |
p. 1049-1054
6 p.
|
artikel
|
| 24 |
Extended SPICE-like model accounting for layout effects on snapback phenomenon during ESD events
|
Salome, P.
|
|
1999
|
39 |
6-7 |
p. 833-838
6 p.
|
artikel
|
| 25 |
Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation
|
Croci, S.
|
|
1999
|
39 |
6-7 |
p. 879-884
6 p.
|
artikel
|
| 26 |
Failure analysis method by using different wavelengths lasers and its application
|
Ito, Seigo
|
|
1999
|
39 |
6-7 |
p. 1015-1020
6 p.
|
artikel
|
| 27 |
Fault localisation in ICs by goniometric laser probing of thermal induced surface waves
|
Dilhaire, S.
|
|
1999
|
39 |
6-7 |
p. 919-923
5 p.
|
artikel
|
| 28 |
FIB voltage contrast measurement for enhanced circuit repairs
|
Desplats, Romain
|
|
1999
|
39 |
6-7 |
p. 1003-1008
6 p.
|
artikel
|
| 29 |
FLIP-chip and “backside” techniques
|
Barton, D.L.
|
|
1999
|
39 |
6-7 |
p. 721-730
10 p.
|
artikel
|
| 30 |
1 f Noise in conductive adhesive bonds under mechanical stress as a sensitive and fast diagnostic tool for reliability assessment
|
Vandamme, L.K.J.
|
|
1999
|
39 |
6-7 |
p. 1089-1094
6 p.
|
artikel
|
| 31 |
Front- and backside investigations of thermal and electronic properties of semiconducting devices
|
Fiege, G.B.M.
|
|
1999
|
39 |
6-7 |
p. 937-940
4 p.
|
artikel
|
| 32 |
Gold removal in failure analysis of GaAs-based laser diodes
|
Vanzi, M.
|
|
1999
|
39 |
6-7 |
p. 1043-1047
5 p.
|
artikel
|
| 33 |
HBM and TLP ESD robustness in smart-power protection structures
|
Santirosia, S.
|
|
1999
|
39 |
6-7 |
p. 839-844
6 p.
|
artikel
|
| 34 |
Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETs
|
Rafí, J.M.
|
|
1999
|
39 |
6-7 |
p. 869-874
6 p.
|
artikel
|
| 35 |
Impact of FEM simulation on reliability improvement of packaging
|
Weide, Kirsten
|
|
1999
|
39 |
6-7 |
p. 1079-1088
10 p.
|
artikel
|
| 36 |
Improved SRAM failure diagnosis for process monitoring via current signature analysis
|
Schienle, M.
|
|
1999
|
39 |
6-7 |
p. 1009-1014
6 p.
|
artikel
|
| 37 |
Influence of pulsed DC current stress on electromigration results in AlCu interconnections; analysis of thermal and healing effects
|
Arnaud, L.
|
|
1999
|
39 |
6-7 |
p. 773-784
12 p.
|
artikel
|
| 38 |
Junction parameters for silicon devices characterization
|
de la Bardonnie, M.
|
|
1999
|
39 |
6-7 |
p. 751-753
3 p.
|
artikel
|
| 39 |
Laser beam backside probing of CMOS integrated circuits
|
Kasapi, Steven
|
|
1999
|
39 |
6-7 |
p. 957-961
5 p.
|
artikel
|
| 40 |
Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress
|
Fürböck, C.
|
|
1999
|
39 |
6-7 |
p. 925-930
6 p.
|
artikel
|
| 41 |
Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)
|
Farmakis, F.V.
|
|
1999
|
39 |
6-7 |
p. 885-889
5 p.
|
artikel
|
| 42 |
Lifetime extrapolation for IGBT modules under realistic operation conditions
|
Ciappa, M.
|
|
1999
|
39 |
6-7 |
p. 1131-1136
6 p.
|
artikel
|
| 43 |
Localization of defects in die-attach assembly by continuous wavelet transform using scanning acoustic microscopy
|
Bechou, L.
|
|
1999
|
39 |
6-7 |
p. 1095-1101
7 p.
|
artikel
|
| 44 |
Long term reliability testing of HV-IGBT modules in worst case traction operation
|
Fratelli, L.
|
|
1999
|
39 |
6-7 |
p. 1137-1142
6 p.
|
artikel
|
| 45 |
Mercury-probe characterisation of soft breakdown: effect of oxide thickness and measurement set-up
|
Cacciato, A.
|
|
1999
|
39 |
6-7 |
p. 903-907
5 p.
|
artikel
|
| 46 |
Model for the oxide thickness dependence of SILC generation based on anode hole injection process
|
Jahan, C.
|
|
1999
|
39 |
6-7 |
p. 791-795
5 p.
|
artikel
|
| 47 |
Model-independent determination of the degradation dynamics of thin SiO2 films
|
Rodríguez, R.
|
|
1999
|
39 |
6-7 |
p. 891-895
5 p.
|
artikel
|
| 48 |
Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique
|
Dreesen, R.
|
|
1999
|
39 |
6-7 |
p. 785-790
6 p.
|
artikel
|
| 49 |
Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism
|
iess, P.
|
|
1999
|
39 |
6-7 |
p. 803-807
5 p.
|
artikel
|
| 50 |
New latchup mechanism in complementary bipolar power ICs triggered by backside die attach Glue
|
van der Pol, J.A.
|
|
1999
|
39 |
6-7 |
p. 863-868
6 p.
|
artikel
|
| 51 |
New rapid method for lifetime determination of gate oxide validated with bipolar/CMOS/DMOS technology
|
Gagnard, X.
|
|
1999
|
39 |
6-7 |
p. 759-763
5 p.
|
artikel
|
| 52 |
New tools for yield improvement in integrated circuit manufacturing: can they be applied to reliability?
|
McDonald, Chris J
|
|
1999
|
39 |
6-7 |
p. 731-739
9 p.
|
artikel
|
| 53 |
Optical method for the measurement of the thermomechanical behaviour of electronic devices
|
Dilhaire, S.
|
|
1999
|
39 |
6-7 |
p. 981-985
5 p.
|
artikel
|
| 54 |
Physical limits and lifetime limitations of semiconductor devices at high temperatures
|
Wondrak, W.
|
|
1999
|
39 |
6-7 |
p. 1113-1120
8 p.
|
artikel
|
| 55 |
Physics of degradation in GaAs-based heterojunction bipolar transistors
|
Henderson, T.
|
|
1999
|
39 |
6-7 |
p. 1033-1042
10 p.
|
artikel
|
| 56 |
Power cycling on press-pack IGBTs: measurements and thermomechanical simulation
|
Cova, Paolo
|
|
1999
|
39 |
6-7 |
p. 1165-1170
6 p.
|
artikel
|
| 57 |
Quality and mechanical reliability assessment of wafer-bonded micromechanical components
|
Petzold, M.
|
|
1999
|
39 |
6-7 |
p. 1103-1108
6 p.
|
artikel
|
| 58 |
Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHz
|
Wittpahl, V.
|
|
1999
|
39 |
6-7 |
p. 951-956
6 p.
|
artikel
|
| 59 |
Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules
|
Hamidi, A.
|
|
1999
|
39 |
6-7 |
p. 1153-1158
6 p.
|
artikel
|
| 60 |
Reliability improvement of EEPROM by using WSi2 polycide gate
|
Ogier-Monnier, K.
|
|
1999
|
39 |
6-7 |
p. 897-901
5 p.
|
artikel
|
| 61 |
Reliability of AlN substrates and their solder joints in IGBT power modules
|
Mitic, G.
|
|
1999
|
39 |
6-7 |
p. 1159-1164
6 p.
|
artikel
|
| 62 |
Reliability versus yield and die location in advanced VLSI
|
Riordan, W.C.
|
|
1999
|
39 |
6-7 |
p. 741-749
9 p.
|
artikel
|
| 63 |
Study of stress induced leakage current by using high resolution measurements
|
De Salvo, B.
|
|
1999
|
39 |
6-7 |
p. 797-802
6 p.
|
artikel
|
| 64 |
Sub-surface analyses of defects in integrated devices by scanning probe acoustic microscopy
|
Cramer, R.M.
|
|
1999
|
39 |
6-7 |
p. 947-950
4 p.
|
artikel
|
| 65 |
Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides
|
Bruyère, S.
|
|
1999
|
39 |
6-7 |
p. 815-820
6 p.
|
artikel
|
| 66 |
Temperature dependence of hot carrier induced MOSFET degradation at low gate bias
|
Hong, Sung H.
|
|
1999
|
39 |
6-7 |
p. 809-814
6 p.
|
artikel
|
| 67 |
Thermal characterization of power devices by scanning thermal microscopy techniques
|
Fiege, G.B.M.
|
|
1999
|
39 |
6-7 |
p. 1149-1152
4 p.
|
artikel
|
| 68 |
TIVA and SEI developments for enhanced front and backside interconnection failure analysis
|
Cole Jr., E.I.
|
|
1999
|
39 |
6-7 |
p. 991-996
6 p.
|
artikel
|
| 69 |
Transient induced latch-up triggered by very fast pulses
|
Bonfert, D.
|
|
1999
|
39 |
6-7 |
p. 875-878
4 p.
|
artikel
|
| 70 |
Trapping mechanisms in negative bias temperature stressed p-MOSFETs
|
Schlünder, Christian
|
|
1999
|
39 |
6-7 |
p. 821-826
6 p.
|
artikel
|
| 71 |
Validation of radiation hardened designs by pulsed laser testing and SPICE analysis
|
Pouget, V.
|
|
1999
|
39 |
6-7 |
p. 931-935
5 p.
|
artikel
|
| 72 |
Voltage contrast measurements on sub-micrometer structures with an electric force microscope based test system
|
Behnke, U.
|
|
1999
|
39 |
6-7 |
p. 969-974
6 p.
|
artikel
|
| 73 |
Wafer mapping of ESD performance
|
Reiner, Joachim C.
|
|
1999
|
39 |
6-7 |
p. 845-850
6 p.
|
artikel
|
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