nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advanced thermal failure analysis and reliability investigations – Industrial demands and related limitations
|
Altes, Andreas |
|
2008 |
100-101 |
8-9 |
p. 1273-1278 6 p. |
artikel |
2 |
A four-point-bending-test for the stability assessment of glass frit bonded molded microsensors
|
Nötzold, K. |
|
2008 |
100-101 |
8-9 |
p. 1562-1566 5 p. |
artikel |
3 |
Alpha particle radiation effects in RF MEMS capacitive switches
|
Ruan, J. |
|
2008 |
100-101 |
8-9 |
p. 1241-1244 4 p. |
artikel |
4 |
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques
|
Bouya, M. |
|
2008 |
100-101 |
8-9 |
p. 1366-1369 4 p. |
artikel |
5 |
Analytical model for multi-junction solar cells prediction in space environment
|
Gauffier, A. |
|
2008 |
100-101 |
8-9 |
p. 1494-1499 6 p. |
artikel |
6 |
An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications
|
Maricau, E. |
|
2008 |
100-101 |
8-9 |
p. 1576-1580 5 p. |
artikel |
7 |
Automotive IC reliability: Elements of the battle towards zero defects
|
Kuper, Fred G. |
|
2008 |
100-101 |
8-9 |
p. 1459-1463 5 p. |
artikel |
8 |
Ball grid array (BGA) solder joint intermittency real-time detection
|
Roth, N. |
|
2008 |
100-101 |
8-9 |
p. 1155-1160 6 p. |
artikel |
9 |
Behaviour of 1.2kV SiC JBS diodes under repetitive high power stress
|
Banu, V. |
|
2008 |
100-101 |
8-9 |
p. 1444-1448 5 p. |
artikel |
10 |
Bridging the business model gap between the semiconductor industry and the automotive industry with respect to quality and reliability
|
de Jong, M. |
|
2008 |
100-101 |
8-9 |
p. 1112-1113 2 p. |
artikel |
11 |
Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency
|
Kalicinski, Stanislaw |
|
2008 |
100-101 |
8-9 |
p. 1221-1226 6 p. |
artikel |
12 |
Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation
|
Miranda, E. |
|
2008 |
100-101 |
8-9 |
p. 1604-1607 4 p. |
artikel |
13 |
Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing tests
|
El Brouji, H. |
|
2008 |
100-101 |
8-9 |
p. 1473-1478 6 p. |
artikel |
14 |
Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120nm and 65nm technology
|
Kindereit, Ulrike |
|
2008 |
100-101 |
8-9 |
p. 1322-1326 5 p. |
artikel |
15 |
Conditional time resolved photoemission for debugging ICs with intermittent faults
|
Zachariasse, Frank |
|
2008 |
100-101 |
8-9 |
p. 1289-1294 6 p. |
artikel |
16 |
Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies
|
Chen, F. |
|
2008 |
100-101 |
8-9 |
p. 1375-1383 9 p. |
artikel |
17 |
Defect analysis concerning variation in characteristics of PIN diode for Hybrid Vehicles
|
Goto, Yasunori |
|
2008 |
100-101 |
8-9 |
p. 1485-1489 5 p. |
artikel |
18 |
Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode
|
Atanassova, E. |
|
2008 |
100-101 |
8-9 |
p. 1193-1197 5 p. |
artikel |
19 |
3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET
|
Sauveplane, J.B. |
|
2008 |
100-101 |
8-9 |
p. 1464-1467 4 p. |
artikel |
20 |
Detectability of dynamic photon emission in static Si CCD for signal path determination in integrated circuits
|
Laskowski, Piotr |
|
2008 |
100-101 |
8-9 |
p. 1295-1299 5 p. |
artikel |
21 |
Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures
|
Yang, Yu |
|
2008 |
100-101 |
8-9 |
p. 1517-1520 4 p. |
artikel |
22 |
Detection of localized UIS failure on IGBTs with the aid of lock-in thermography
|
Breglio, G. |
|
2008 |
100-101 |
8-9 |
p. 1432-1434 3 p. |
artikel |
23 |
Determination of migration effects in Cu-via structures with respect to process-induced stress
|
Weide-Zaage, Kirsten |
|
2008 |
100-101 |
8-9 |
p. 1393-1397 5 p. |
artikel |
24 |
Determination of temperature change inside IC packages during laser ablation of molding compound
|
Schwindenhammer, P. |
|
2008 |
100-101 |
8-9 |
p. 1263-1267 5 p. |
artikel |
25 |
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications
|
Pic, D. |
|
2008 |
100-101 |
8-9 |
p. 1318-1321 4 p. |
artikel |
26 |
Editorial
|
Groeseneken, Guido |
|
2008 |
100-101 |
8-9 |
p. 1111- 1 p. |
artikel |
27 |
Effect of physical defect on shmoos in CMOS DSM technologies
|
Machouat, A. |
|
2008 |
100-101 |
8-9 |
p. 1333-1338 6 p. |
artikel |
28 |
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields
|
Tazzoli, A. |
|
2008 |
100-101 |
8-9 |
p. 1370-1374 5 p. |
artikel |
29 |
ESD failure signature in capacitive RF MEMS switches
|
Ruan, J. |
|
2008 |
100-101 |
8-9 |
p. 1237-1240 4 p. |
artikel |
30 |
ESD issues in advanced CMOS bulk and FinFET technologies: Processing, protection devices and circuit strategies
|
Russ, Christian |
|
2008 |
100-101 |
8-9 |
p. 1403-1411 9 p. |
artikel |
31 |
ESD sensitivity investigation on a wide range of high density embedded capacitors
|
Barbier, Frederic |
|
2008 |
100-101 |
8-9 |
p. 1422-1426 5 p. |
artikel |
32 |
Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure
|
Busatto, G. |
|
2008 |
100-101 |
8-9 |
p. 1306-1309 4 p. |
artikel |
33 |
Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs
|
Sienkiewicz, M. |
|
2008 |
100-101 |
8-9 |
p. 1529-1532 4 p. |
artikel |
34 |
Failure analysis of a thin-film nitride MEMS package
|
Li, Q. |
|
2008 |
100-101 |
8-9 |
p. 1557-1561 5 p. |
artikel |
35 |
Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology
|
Reverdy, A. |
|
2008 |
100-101 |
8-9 |
p. 1279-1284 6 p. |
artikel |
36 |
Fast electromigration wafer mapping for wafer fab process monitoring and improvement
|
Li, Yuan |
|
2008 |
100-101 |
8-9 |
p. 1388-1392 5 p. |
artikel |
37 |
Fracture morphology and mechanism of IMC in Low-Ag SAC Solder/UBM (Ni(P)-Au) for WLCSP
|
Sun, F. |
|
2008 |
100-101 |
8-9 |
p. 1167-1170 4 p. |
artikel |
38 |
Generic simulator for faulty IC
|
Ferrigno, Julie |
|
2008 |
100-101 |
8-9 |
p. 1592-1596 5 p. |
artikel |
39 |
High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs
|
Iannuzzo, F. |
|
2008 |
100-101 |
8-9 |
p. 1449-1452 4 p. |
artikel |
40 |
Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications
|
Heer, M. |
|
2008 |
100-101 |
8-9 |
p. 1525-1528 4 p. |
artikel |
41 |
IGBT module failure analysis in railway applications
|
Perpiñà, X. |
|
2008 |
100-101 |
8-9 |
p. 1427-1431 5 p. |
artikel |
42 |
IGBT modules robustness during turn-off commutation
|
Busatto, G. |
|
2008 |
100-101 |
8-9 |
p. 1435-1439 5 p. |
artikel |
43 |
Impact of inside spacer process on fully self-aligned 250GHz SiGe:C HBTs reliability performances: a-Si vs. nitride
|
Diop, M. |
|
2008 |
100-101 |
8-9 |
p. 1198-1201 4 p. |
artikel |
44 |
Impact of silicon nitride CESL on NLDEMOS transistor reliability
|
Beylier, G. |
|
2008 |
100-101 |
8-9 |
p. 1539-1543 5 p. |
artikel |
45 |
Influence of the organic pollution on the reliability of HE9 connectors
|
Crétinon, L. |
|
2008 |
100-101 |
8-9 |
p. 1129-1132 4 p. |
artikel |
46 |
InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability
|
Liu, Xiang |
|
2008 |
100-101 |
8-9 |
p. 1212-1215 4 p. |
artikel |
47 |
Inside front cover - Editorial board
|
|
|
2008 |
100-101 |
8-9 |
p. IFC- 1 p. |
artikel |
48 |
Insights on trap generation and breakdown in ultra thin SiO2 and SiON dielectrics from low voltage stress-induced leakage current measurements
|
Nicollian, Paul E. |
|
2008 |
100-101 |
8-9 |
p. 1171-1177 7 p. |
artikel |
49 |
Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling
|
Biberger, Roland |
|
2008 |
100-101 |
8-9 |
p. 1339-1342 4 p. |
artikel |
50 |
Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches
|
Belarni, A. |
|
2008 |
100-101 |
8-9 |
p. 1232-1236 5 p. |
artikel |
51 |
Laser decapsulation of plastic packages for failure analysis: Process control and artefact investigations
|
Aubert, A. |
|
2008 |
100-101 |
8-9 |
p. 1144-1148 5 p. |
artikel |
52 |
Layout analysis as supporting tool for failure localization: Basic principles and case studies
|
Hartmann, C. |
|
2008 |
100-101 |
8-9 |
p. 1343-1348 6 p. |
artikel |
53 |
Lifetime analysis of solder joints in high power IGBT modules for increasing the reliability for operation at 150°C
|
Feller, L. |
|
2008 |
100-101 |
8-9 |
p. 1161-1166 6 p. |
artikel |
54 |
Low-cost preparation method for exposing IC surfaces in stacked die packages by micro-abrasive blasting
|
Martens, S. |
|
2008 |
100-101 |
8-9 |
p. 1513-1516 4 p. |
artikel |
55 |
MIMC reliability and electrical behavior defined by a physical layer property of the dielectric
|
Ackaert, J. |
|
2008 |
100-101 |
8-9 |
p. 1553-1556 4 p. |
artikel |
56 |
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors
|
Polspoel, W. |
|
2008 |
100-101 |
8-9 |
p. 1521-1524 4 p. |
artikel |
57 |
NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique
|
Aresu, S. |
|
2008 |
100-101 |
8-9 |
p. 1310-1312 3 p. |
artikel |
58 |
Near-field detection of photon emission from silicon with 30nm spatial resolution
|
Isakov, D. |
|
2008 |
100-101 |
8-9 |
p. 1285-1288 4 p. |
artikel |
59 |
Negative bias temperature instability in n-channel power VDMOSFETs
|
Danković, D. |
|
2008 |
100-101 |
8-9 |
p. 1313-1317 5 p. |
artikel |
60 |
New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure
|
Goroll, Michael |
|
2008 |
100-101 |
8-9 |
p. 1509-1512 4 p. |
artikel |
61 |
Non-linear width scaling of ESD protection devices and link with p-well implant in BCD-processes
|
Olthof, E.H.T. |
|
2008 |
100-101 |
8-9 |
p. 1417-1421 5 p. |
artikel |
62 |
Novel simulation approach for transient analysis and reliable thermal management of power devices
|
Castellazzi, A. |
|
2008 |
100-101 |
8-9 |
p. 1500-1504 5 p. |
artikel |
63 |
On chip–package stress interaction
|
van Driel, W.D. |
|
2008 |
100-101 |
8-9 |
p. 1268-1272 5 p. |
artikel |
64 |
On the temperature dependence of NBTI recovery
|
Aichinger, T. |
|
2008 |
100-101 |
8-9 |
p. 1178-1184 7 p. |
artikel |
65 |
Optimization of gate poly TAB size and reliability on short channel pMOSFET
|
Seok, Jung-Eun |
|
2008 |
100-101 |
8-9 |
p. 1185-1188 4 p. |
artikel |
66 |
Packaging influences on the reliability of MEMS resonators
|
Zaal, J.J.M. |
|
2008 |
100-101 |
8-9 |
p. 1567-1571 5 p. |
artikel |
67 |
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications
|
Fock-Sui-Too, J.L. |
|
2008 |
100-101 |
8-9 |
p. 1453-1458 6 p. |
artikel |
68 |
PLL soft functional failure analysis in advanced logic product using fault based analogue simulation and soft defect localization
|
Gao, Liming |
|
2008 |
100-101 |
8-9 |
p. 1349-1353 5 p. |
artikel |
69 |
PMOS breakdown effects on digital circuits – Modeling and analysis
|
Kuang, Weidong |
|
2008 |
100-101 |
8-9 |
p. 1597-1600 4 p. |
artikel |
70 |
Reduction of test effort. Looking for more acceleration for reliable components for automotive applications
|
Pufall, R. |
|
2008 |
100-101 |
8-9 |
p. 1490-1493 4 p. |
artikel |
71 |
Relevant metrics for evaluation of concurrent error detection schemes
|
de Vasconcelos, Maí C.R. |
|
2008 |
100-101 |
8-9 |
p. 1601-1603 3 p. |
artikel |
72 |
Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique
|
Moschou, D.C. |
|
2008 |
100-101 |
8-9 |
p. 1544-1548 5 p. |
artikel |
73 |
Reliability and failure in single crystal silicon MEMS devices
|
Neels, A. |
|
2008 |
100-101 |
8-9 |
p. 1245-1247 3 p. |
artikel |
74 |
Reliability- and process-variation aware design of integrated circuits
|
Alam, M. |
|
2008 |
100-101 |
8-9 |
p. 1114-1122 9 p. |
artikel |
75 |
Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip
|
Salm, Cora |
|
2008 |
100-101 |
8-9 |
p. 1139-1143 5 p. |
artikel |
76 |
Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS
|
Moens, P. |
|
2008 |
100-101 |
8-9 |
p. 1300-1305 6 p. |
artikel |
77 |
Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED
|
Jeong, Jae-Seong |
|
2008 |
100-101 |
8-9 |
p. 1216-1220 5 p. |
artikel |
78 |
Reliability investigations of 850nm silicon photodiodes under proton irradiation for space applications
|
Bourqui, M.L. |
|
2008 |
100-101 |
8-9 |
p. 1202-1207 6 p. |
artikel |
79 |
Reliability issues of e-Cubes heterogeneous system integration
|
Janczyk, Grzegorz |
|
2008 |
100-101 |
8-9 |
p. 1133-1138 6 p. |
artikel |
80 |
Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction
|
Verchiani, M. |
|
2008 |
100-101 |
8-9 |
p. 1412-1416 5 p. |
artikel |
81 |
RF CMOS reliability simulations
|
Sasse, Guido T. |
|
2008 |
100-101 |
8-9 |
p. 1581-1585 5 p. |
artikel |
82 |
Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiation
|
Deshayes, Y. |
|
2008 |
100-101 |
8-9 |
p. 1354-1360 7 p. |
artikel |
83 |
Signal probability for reliability evaluation of logic circuits
|
Franco, Denis Teixeira |
|
2008 |
100-101 |
8-9 |
p. 1586-1591 6 p. |
artikel |
84 |
Silicon based system in package: Improvement of passive integration process to avoid TBMS failure
|
Gautier, Christian |
|
2008 |
100-101 |
8-9 |
p. 1258-1262 5 p. |
artikel |
85 |
Simulation of migration effects in nanoscaled copper metallizations
|
Weide-Zaage, Kirsten |
|
2008 |
100-101 |
8-9 |
p. 1398-1402 5 p. |
artikel |
86 |
Solder joint and trace line failure simulation and experimental validation of fan-out type wafer level packaging subjected to drop impact
|
Chou, Chan-Yen |
|
2008 |
100-101 |
8-9 |
p. 1149-1154 6 p. |
artikel |
87 |
Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants
|
Bukhori, Muhammad Faiz |
|
2008 |
100-101 |
8-9 |
p. 1549-1552 4 p. |
artikel |
88 |
Statistical simulation of random dopant induced threshold voltage fluctuations for 35nm channel length MOSFET
|
Kovac, Urban |
|
2008 |
100-101 |
8-9 |
p. 1572-1575 4 p. |
artikel |
89 |
Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle
|
Croes, K. |
|
2008 |
100-101 |
8-9 |
p. 1384-1387 4 p. |
artikel |
90 |
Sulfur-contamination of high power white LED
|
Mura, G. |
|
2008 |
100-101 |
8-9 |
p. 1208-1211 4 p. |
artikel |
91 |
Surface ESD (ESDFOS) in assembly fab machineries as a functional and reliability risk – Failure analysis, tool diagnosis and on-site-remedies
|
Jacob, Peter |
|
2008 |
100-101 |
8-9 |
p. 1608-1612 5 p. |
artikel |
92 |
Systems-in-foil – Devices, fabrication processes and reliability issues
|
van den Brand, J. |
|
2008 |
100-101 |
8-9 |
p. 1123-1128 6 p. |
artikel |
93 |
Temperature stability of a piezoresistive MEMS resonator including self-heating
|
Bendida, S. |
|
2008 |
100-101 |
8-9 |
p. 1227-1231 5 p. |
artikel |
94 |
Testing semiconductor devices at extremely high operating temperatures
|
Borthen, Peter |
|
2008 |
100-101 |
8-9 |
p. 1440-1443 4 p. |
artikel |
95 |
Thermal heating within SOI
|
Koning, J.J. |
|
2008 |
100-101 |
8-9 |
p. 1505-1508 4 p. |
artikel |
96 |
Thermal modeling of high frequency DC–DC switching modules: Electromagnetic and thermal simulation of magnetic components
|
Cova, P. |
|
2008 |
100-101 |
8-9 |
p. 1468-1472 5 p. |
artikel |
97 |
Thermal resistance assessment in multi-trenched power devices
|
Roig, J. |
|
2008 |
100-101 |
8-9 |
p. 1479-1484 6 p. |
artikel |
98 |
Thermal storage effects on AlGaN/GaN HEMT
|
Danesin, Francesca |
|
2008 |
100-101 |
8-9 |
p. 1361-1365 5 p. |
artikel |
99 |
Timing analysis of scan design integrated circuits using stimulation by an infrared diode laser in externally triggered pulsing condition
|
Kiyan, Tuba |
|
2008 |
100-101 |
8-9 |
p. 1327-1332 6 p. |
artikel |
100 |
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
|
Jacob, Peter |
|
2008 |
100-101 |
8-9 |
p. 1253-1257 5 p. |
artikel |
101 |
Voltage acceleration of time dependent breakdown of ultra-thin NO and NON dielectrics
|
Hofmann, Peter |
|
2008 |
100-101 |
8-9 |
p. 1189-1192 4 p. |
artikel |
102 |
Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation
|
Lamhamdi, M. |
|
2008 |
100-101 |
8-9 |
p. 1248-1252 5 p. |
artikel |
103 |
Voltage-based fault path tracing by transistor operating point analysis
|
Sanada, Masaru |
|
2008 |
100-101 |
8-9 |
p. 1533-1538 6 p. |
artikel |