| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms
|
Solaro, Y.
|
|
2016
|
116 |
C |
p. 8-11
4 p.
|
artikel
|
| 2 |
A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier
|
Kargarrazi, Saleh
|
|
2016
|
116 |
C |
p. 33-37
5 p.
|
artikel
|
| 3 |
Closed form expressions for sheet resistance and mobility from Van-der-Pauw measurement on 90° symmetric devices with four arbitrary contacts
|
Ausserlechner, Udo
|
|
2016
|
116 |
C |
p. 46-55
10 p.
|
artikel
|
| 4 |
Comparison of the electron work function, hole concentration and exciton diffusion length for P3HT and PT prepared by thermal or acid cleavage
|
Toušek, J.
|
|
2016
|
116 |
C |
p. 111-118
8 p.
|
artikel
|
| 5 |
Comprehensive understanding of charge lateral migration in 3D SONOS memories
|
Liu, Lifang
|
|
2016
|
116 |
C |
p. 95-99
5 p.
|
artikel
|
| 6 |
DC sputtered amorphous In–Sn–Zn–O thin-film transistors: Electrical properties and stability
|
Nakata, Mitsuru
|
|
2016
|
116 |
C |
p. 22-29
8 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2016
|
116 |
C |
p. IFC-
1 p.
|
artikel
|
| 8 |
Effects of various gate materials on electrical degradation of a-Si:H TFT in industrial display application
|
Ho, Ching-Yuan
|
|
2016
|
116 |
C |
p. 130-134
5 p.
|
artikel
|
| 9 |
Extraction of second harmonic from an InP based planar Gunn diode using diamond resonator for milli-metric wave frequencies
|
Maricar, Mohamed Ismaeel
|
|
2016
|
116 |
C |
p. 104-106
3 p.
|
artikel
|
| 10 |
Full electrothermal physically-based modeling of the power diode using PSPICE
|
Shaker, Ahmed
|
|
2016
|
116 |
C |
p. 70-79
10 p.
|
artikel
|
| 11 |
Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric
|
Rafí, J.M.
|
|
2016
|
116 |
C |
p. 38-45
8 p.
|
artikel
|
| 12 |
High-performance logic transistor DC benchmarking toward 7nm technology-node between III–V and Si tri-gate n-MOSFETs using virtual-source injection velocity model
|
Baek, Rock-Hyun
|
|
2016
|
116 |
C |
p. 100-103
4 p.
|
artikel
|
| 13 |
Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer
|
Lin, Qing
|
|
2016
|
116 |
C |
p. 60-64
5 p.
|
artikel
|
| 14 |
Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)
|
Kim, Seung Kyu
|
|
2016
|
116 |
C |
p. 88-94
7 p.
|
artikel
|
| 15 |
Monolithic integration of low-pass filters with ESD protections on p+ silicon/porous silicon substrates
|
Capelle, Marie
|
|
2016
|
116 |
C |
p. 12-14
3 p.
|
artikel
|
| 16 |
Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air
|
Goyal, Nitin
|
|
2016
|
116 |
C |
p. 107-110
4 p.
|
artikel
|
| 17 |
Preliminary study and design for variation of lateral width SOI LDMOS device
|
Wang, Ying
|
|
2016
|
116 |
C |
p. 65-69
5 p.
|
artikel
|
| 18 |
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides
|
Cao, Jiang
|
|
2016
|
116 |
C |
p. 1-7
7 p.
|
artikel
|
| 19 |
Room temperature hydrogen sensing with the graphite/ZnO nanorod junctions decorated with Pt nanoparticles
|
Yatskiv, R.
|
|
2016
|
116 |
C |
p. 124-129
6 p.
|
artikel
|
| 20 |
Study of drain-extended NMOS under electrostatic discharge stress in 28nm and 40nm CMOS process
|
Wang, Weihuai
|
|
2016
|
116 |
C |
p. 80-87
8 p.
|
artikel
|
| 21 |
Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime
|
Cusumano, P.
|
|
2016
|
116 |
C |
p. 30-32
3 p.
|
artikel
|
| 22 |
The effect of annealing temperatures to prepare ZnO seeds layer on ZnO nanorods array/TiO2 nanoparticles photoanode
|
Chou, Hsueh-Tao
|
|
2016
|
116 |
C |
p. 15-21
7 p.
|
artikel
|
| 23 |
The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions
|
Xu, Zhen
|
|
2016
|
116 |
C |
p. 119-123
5 p.
|
artikel
|
| 24 |
Thin-films and transistors of p-ZnTe
|
Lastra, G.
|
|
2016
|
116 |
C |
p. 56-59
4 p.
|
artikel
|
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