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                                       Details for article 20 of 24 found articles
 
 
  Study of drain-extended NMOS under electrostatic discharge stress in 28nm and 40nm CMOS process
 
 
Title: Study of drain-extended NMOS under electrostatic discharge stress in 28nm and 40nm CMOS process
Author: Wang, Weihuai
Jin, Hao
Dong, Shurong
Zhong, Lei
Han, Yan
Appeared in: Solid-state electronics
Paging: Volume 116 (2016) nr. C pages 8 p.
Year: 2016
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 20 of 24 found articles
 
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