| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs
|
Goel, Ekta
|
|
2016
|
91 |
4 |
p. 383-390
|
artikel
|
| 2 |
Band structure of one-dimensional plasma photonic crystals using the Fresnel coefficients method
|
Jafari, A.
|
|
2016
|
91 |
4 |
p. 453-460
|
artikel
|
| 3 |
Black phosphorus based saturable absorber for Nd-ion doped pulsed solid state laser operation
|
Han, S.
|
|
2016
|
91 |
4 |
p. 439-443
|
artikel
|
| 4 |
Characteristics study of projectile’s lightest fragment for 84Kr36–emulsion interaction at around 1 A GeV
|
Marimuthu, N.
|
|
2016
|
91 |
4 |
p. 431-438
|
artikel
|
| 5 |
Effect of doping on amplitude modulation of space-charge wave in semiconductor quantum plasma
|
Banerjee, Sreyasi
|
|
2016
|
91 |
4 |
p. 461-469
|
artikel
|
| 6 |
Entanglement dynamics in two-mode Gaussian systems
|
Jami, S.
|
|
2016
|
91 |
4 |
p. 391-401
|
artikel
|
| 7 |
First principles study of electronic structure dependent optical properties of oxychalcogenides BiOCuCh (Ch = S, Se, Te)
|
Islam, A. K. M. Farid Ul
|
|
2016
|
91 |
4 |
p. 403-412
|
artikel
|
| 8 |
Imprint of the atmospheric attenuation process on electron distribution in EAS
|
Dey, R. K.
|
|
2016
|
91 |
4 |
p. 359-369
|
artikel
|
| 9 |
Optical, elastic and thermal properties of ZB-AlN semiconductor from first-principle calculations
|
Kumar, V.
|
|
2016
|
91 |
4 |
p. 445-451
|
artikel
|
| 10 |
Structural investigation of Mimosa pudica Linn fibre
|
Patra, S. R.
|
|
2016
|
91 |
4 |
p. 377-382
|
artikel
|
| 11 |
Study on angular variation of cosmic ray secondary particles with atmospheric depth using CORSIKA code
|
Patgiri, P.
|
|
2016
|
91 |
4 |
p. 351-358
|
artikel
|
| 12 |
Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures
|
Altındal Yerişkin, S.
|
|
2017
|
91 |
4 |
p. 421-430
|
artikel
|
| 13 |
The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions
|
Çavaş, M.
|
|
2017
|
91 |
4 |
p. 413-420
|
artikel
|
| 14 |
Use of quantum self-friction potentials and forces in standard convention for study of harmonic oscillator
|
Guseinov, I. I.
|
|
2016
|
91 |
4 |
p. 371-376
|
artikel
|
Tijdschrift beschrijving