| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A glance of technology efforts for design-for-manufacturing in nano-scale CMOS processes
|
Cheng, YuHua
|
|
2008
|
51 |
6 |
p. 807-818
|
artikel
|
| 2 |
A software architecture centric self-adaptation approach for Internetware
|
Mei, Hong
|
|
2008
|
51 |
6 |
p. 722-742
|
artikel
|
| 3 |
BSIM—making the first international standard MOSFET model
|
Hu, ChenMing
|
|
2008
|
51 |
6 |
p. 765-773
|
artikel
|
| 4 |
Editor’s note
|
|
|
2008
|
51 |
6 |
p. 609
|
artikel
|
| 5 |
Evolution of MPP SoC architecture techniques
|
Shen, XuBang
|
|
2008
|
51 |
6 |
p. 756-764
|
artikel
|
| 6 |
From knowledge based software engineering to knowware based software engineering
|
Lu, RuQian
|
|
2008
|
51 |
6 |
p. 638-660
|
artikel
|
| 7 |
Key technologies of system on chip design
|
Wei, ShaoJun
|
|
2008
|
51 |
6 |
p. 790-798
|
artikel
|
| 8 |
Nanoparticle-based lift-off technique for ultra-thin nanoporous film preparation
|
Wang, Wei
|
|
2008
|
51 |
6 |
p. 819-824
|
artikel
|
| 9 |
Novel devices and process for 32 nm CMOS technology and beyond
|
Wang, YangYuan
|
|
2008
|
51 |
6 |
p. 743-755
|
artikel
|
| 10 |
Novel electrical characterization for advanced CMOS gate dielectrics
|
Ma, T. P.
|
|
2008
|
51 |
6 |
p. 774-779
|
artikel
|
| 11 |
Novel vertical channel double gate structures for high density and low power flash memory applications
|
Huang, Ru
|
|
2008
|
51 |
6 |
p. 799-806
|
artikel
|
| 12 |
On environment-driven software model for Internetware
|
Lü, Jian
|
|
2008
|
51 |
6 |
p. 683-721
|
artikel
|
| 13 |
Quantum programming languages: A tentative study
|
Xu, JiaFu
|
|
2008
|
51 |
6 |
p. 623-637
|
artikel
|
| 14 |
Service refinement
|
He, JiFeng
|
|
2008
|
51 |
6 |
p. 661-682
|
artikel
|
| 15 |
Technical framework for Internetware: An architecture centric approach
|
Yang, FuQing
|
|
2008
|
51 |
6 |
p. 610-622
|
artikel
|
| 16 |
The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
|
Zhang, JinFeng
|
|
2008
|
51 |
6 |
p. 780-789
|
artikel
|
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