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                                       Details for article 3 of 16 found articles
 
 
  BSIM—making the first international standard MOSFET model
 
 
Title: BSIM—making the first international standard MOSFET model
Author: Hu, ChenMing
Appeared in: Science in China. Series F, Information Sciences
Paging: Volume 51 (2008) nr. 6 pages 765-773
Year: 2008
Contents:
Publisher: SP Science in China Press, Heidelberg
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 16 found articles
 
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