| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Effect of Boundary Roughness on the Variability of the VAC of Silicon Field-Effect GAA Nanotransistors
|
Masalskii, N. V.
|
|
|
54 |
2 |
p. 169-176
|
artikel
|
| 2 |
Electrical Characteristics of Ruthenium Tracks with a Cross-Sectional Area Less Than 1000 nm2
|
Glaz, O. G.
|
|
|
54 |
2 |
p. 156-168
|
artikel
|
| 3 |
Ferroelectric Transistors: Operating Principles, Materials, and Applications
|
Reznyukov, A. Yu.
|
|
|
54 |
2 |
p. 140-155
|
artikel
|
| 4 |
Impact of Self-Heating in Si/SiGe HBTs with Multi-Finger Emitters
|
Abdelaaziz Boulgheb,
|
|
|
54 |
2 |
p. 200-207
|
artikel
|
| 5 |
Investigation of Deposition Rates in Bilayer Silicon Nitride Structures Using Ellipsometry and the Maxwell Garnett Model
|
Abdelaziz Beddiaf,
|
|
|
54 |
2 |
p. 208-215
|
artikel
|
| 6 |
Loss Analysis of T-Type Three-Level Inverter Based on SiC/GaN Device
|
Chunhua Chai,
|
|
|
54 |
2 |
p. 187-199
|
artikel
|
| 7 |
Measuring the Adhesion Energy between MEMS Structures Using an Adhered Cantilever
|
Uvarov, I. V.
|
|
|
54 |
2 |
p. 177-186
|
artikel
|
| 8 |
Multilevel Switching in Memristive Structures Based on Oxidized Lead Selenide
|
Tulina, N. A.
|
|
|
54 |
2 |
p. 131-139
|
artikel
|
| 9 |
Precise Etching of Aluminum Conductors in the Technology of Switching Devices of Microsystem Engineering
|
Didyk, P. I.
|
|
|
54 |
2 |
p. 115-121
|
artikel
|
| 10 |
Regularities of X-ray Transfer in Doped Multicomponent Semiconductors for Dosimetry
|
Asadov, S. M.
|
|
|
54 |
2 |
p. 97-114
|
artikel
|
| 11 |
Spectroscopy and Actinometry of Halogen-Containing Inductively Coupled Plasma for Anisotropic Etching
|
Kuzmenko, V. O.
|
|
|
54 |
2 |
p. 122-130
|
artikel
|
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