| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Artificial Intelligence Will Never Completely Replace Humans
|
Abramov, I. I.
|
|
|
51 |
6 |
p. 376-386
|
artikel
|
| 2 |
Computer Analysis of Resistive Switching in a Bismuth Selenide Microcrystal-Based Structure
|
Sirotkin, V. V.
|
|
|
51 |
6 |
p. 445-453
|
artikel
|
| 3 |
Contact Transport and Field Emission Properties of Low-Dimensional 2D Carbon Heterostructures
|
Yafarov, R. K.
|
|
|
51 |
6 |
p. 439-444
|
artikel
|
| 4 |
Design of Cu-MWCNT Based Heterogeneous Coaxial through Silicon Vias for High-Speed VLSI Applications
|
Rajkumar, Katepogu
|
|
|
51 |
6 |
p. 512-520
|
artikel
|
| 5 |
Development of a Method for Constructing a Nonlinear Model of a Metamorphic 0.15-μm МHEMT InAlAs/InGaAs Transistor
|
Lokotko, V. V.
|
|
|
51 |
6 |
p. 404-412
|
artikel
|
| 6 |
Dielectric Barrier in the Subtractive Process of Formation of a Copper Metallization System
|
Orlov, A. A.
|
|
|
51 |
6 |
p. 470-479
|
artikel
|
| 7 |
Effect of Ion-Plasma Treatment on the Phase Composition and Electrical Resistivity of Nanometer-Thick Tungsten Films
|
Selyukov, R. V.
|
|
|
51 |
6 |
p. 488-496
|
artikel
|
| 8 |
Effect of Lattice Defects on the Electromigration-Induced Instability of the Interface between Joined Conductive Materials
|
Makhviladze, T. M.
|
|
|
51 |
6 |
p. 426-434
|
artikel
|
| 9 |
Electroluminescence in p-GaP/por-GaP/SnO2 Structures in the Red Region of the Spectrum
|
Dikhanbaev, K. K.
|
|
|
51 |
6 |
p. 465-469
|
artikel
|
| 10 |
Electron Detection Circuit Based on a Tunnel Structure of Four Quantum Dots with Asymmetric Parameters
|
Tsukanov, A. V.
|
|
|
51 |
6 |
p. 387-397
|
artikel
|
| 11 |
Electrophysical Characteristics and Emission Spectra of Carbon Tetrafluoride Plasma
|
Murin, D. B.
|
|
|
51 |
6 |
p. 368-375
|
artikel
|
| 12 |
Laser Plasma-Chemical Etching of Polycrystalline Diamond and Single-Crystal Sapphire
|
Red’kin, S. V.
|
|
|
51 |
6 |
p. 435-438
|
artikel
|
| 13 |
Magneto-Optical Properties of Multilayer Structures Based on Cobalt and Chromium-Group Metals for Magnetic Memory Elements
|
Prokaznikov, A. V.
|
|
|
51 |
6 |
p. 454-464
|
artikel
|
| 14 |
Method for the Iterative Refinement of Parameter Values in Analytical Models of Microelectronic Devices Based on Integrated MOS Transistors
|
Sinyukin, A. S.
|
|
|
51 |
6 |
p. 398-403
|
artikel
|
| 15 |
Modeling of Gold Adsorption by the Surface of Defect Graphene
|
Asadov, M. M.
|
|
|
51 |
6 |
p. 413-425
|
artikel
|
| 16 |
On the Effect of the Cl2 + O2 + Ar Mixture Composition on the Concentrations of Chlorine and Oxygen Atoms in a Plasma
|
Amirov, I. I.
|
|
|
51 |
6 |
p. 497-504
|
artikel
|
| 17 |
Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He Plasma
|
Efremov, A. M.
|
|
|
51 |
6 |
p. 480-487
|
artikel
|
| 18 |
Peculiarities of the Kinetics of Heterogeneous Processes during the Etching of Silicon in CF4 and C2Br2F4 Plasma
|
Miakonkikh, A. V.
|
|
|
51 |
6 |
p. 505-511
|
artikel
|
| 19 |
Spectral Control of the Process of Copper Etching in Radio Frequency Dichlorodifluoromethane Plasma
|
Murin, D. B.
|
|
|
51 |
6 |
p. 359-367
|
artikel
|
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