| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge
|
Ezhovskii, Yu. K.
|
|
2019
|
48 |
4 |
p. 229-235
|
artikel
|
| 2 |
Effect of the Composition on the Dielectric Properties and Charge Transfer in 2D GaS1 –хSeх Materials
|
Asadov, S. M.
|
|
2019
|
48 |
4 |
p. 203-207
|
artikel
|
| 3 |
Estimating the Interrelation between the Rate of Atomic Layer Deposition of Thin Platinum-Group Metal Films and the Molecular Mass of Reactant Precursors
|
Vasilyev, V. Yu.
|
|
2019
|
48 |
4 |
p. 208-219
|
artikel
|
| 4 |
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology
|
Boruzdina, A. B.
|
|
2019
|
48 |
4 |
p. 268-272
|
artikel
|
| 5 |
Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs
|
Chumakov, A. I.
|
|
2019
|
48 |
4 |
p. 250-254
|
artikel
|
| 6 |
Memristor Based Pulse Train Generator
|
Rakitin, V. V.
|
|
2019
|
48 |
4 |
p. 255-261
|
artikel
|
| 7 |
Microconsuming 8–12 GHz GaN Power Amplifiers
|
Gamkrelidze, S. A.
|
|
2019
|
48 |
4 |
p. 262-267
|
artikel
|
| 8 |
Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method
|
Fadeev, A. V.
|
|
2019
|
48 |
4 |
p. 220-228
|
artikel
|
| 9 |
Synthesis of a Concurrent Error Detection Circuit Based on the Spectral R-Code with the Partitioning of Outputs into Groups
|
Stempkovskii, A. L.
|
|
2019
|
48 |
4 |
p. 240-249
|
artikel
|
| 10 |
The Effect of an N2 Additive on the GaAs Etching Rate in CF2Cl2 Plasma
|
Pivovarenok, S. A.
|
|
2019
|
48 |
4 |
p. 236-239
|
artikel
|
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