| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adaptive equalizer with a controller of a minimally admissible differential voltage of the output signal and pseudodifferential cascode output buffer for the 10-Gb/s transmitter according to the 65-nm CMOS technology
|
Larionov, A. V.
|
|
2015
|
44 |
6 |
p. 414-420
|
artikel
|
| 2 |
Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system
|
Trushin, O. S.
|
|
2015
|
44 |
6 |
p. 410-413
|
artikel
|
| 3 |
Basic memory elements using DICE cells for fault-tolerant 28 nm CMOS RAM
|
Stenin, V. Ya.
|
|
2015
|
44 |
6 |
p. 368-379
|
artikel
|
| 4 |
Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
|
Safaraliev, G. K.
|
|
2015
|
44 |
6 |
p. 404-409
|
artikel
|
| 5 |
Creation of lithographic masks using a scanning probe microscope
|
Bizyaev, D. A.
|
|
2015
|
44 |
6 |
p. 389-398
|
artikel
|
| 6 |
Design-processing features of microwave GaAs monolithic integrated circuits of a low-noise amplifier with a copper metallized frontside
|
Ishutkin, S. V.
|
|
2015
|
44 |
6 |
p. 380-388
|
artikel
|
| 7 |
Development of crystal matrix of tensoresistive pressure tactile transducers for robotics
|
Gusev, D. V.
|
|
2015
|
44 |
6 |
p. 421-424
|
artikel
|
| 8 |
Modeling of the spectroscopic response of photonic isomers with NV-centers. Part II
|
Tsukanov, A. V.
|
|
2015
|
44 |
6 |
p. 355-367
|
artikel
|
| 9 |
Modification of the positive photoresist surface by ion implantation
|
Brinkevich, D. I.
|
|
2015
|
44 |
6 |
p. 399-403
|
artikel
|
| 10 |
Thin-film capacitor based on the strontium titanate formed by the sol gel technique
|
Anaraki, Kh. Sokhrabi
|
|
2015
|
44 |
6 |
p. 425-429
|
artikel
|
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