| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Application of probabilistic and fuzzy models to the simulation of radiation failures of LSI circuits
|
Barbashov, V. M.
|
|
2014
|
43 |
2 |
p. 148-161
|
artikel
|
| 2 |
Effect of topological placement of memory cells in memory chips on multiplicity of cell upsets from heavy charged particles
|
Boruzdina, A. B.
|
|
2014
|
43 |
2 |
p. 96-101
|
artikel
|
| 3 |
Evaluation of multibit upsets in integrated circuits under heavy charged particles
|
Chumakov, A. I.
|
|
2014
|
43 |
2 |
p. 91-95
|
artikel
|
| 4 |
Laser imitation simulation behind the diffraction limit
|
Skorobogatov, P. K.
|
|
2014
|
43 |
2 |
p. 125-132
|
artikel
|
| 5 |
Limitations and prospects of using the two-phase CMOS logics in upset-immune sub-100-nm VLSIs
|
Stenin, V. Ya.
|
|
2014
|
43 |
2 |
p. 102-111
|
artikel
|
| 6 |
Modeling the characteristics of trigger elements of two-phase CMOS logic, taking into account the charge sharing effect under exposure to single nuclear particles
|
Katunin, Yu. V.
|
|
2014
|
43 |
2 |
p. 112-124
|
artikel
|
| 7 |
Selection of optimal parameters of laser radiation for simulating ionization effects in silicon bulk-technology microcircuits
|
Nikiforov, A. Yu.
|
|
2014
|
43 |
2 |
p. 133-138
|
artikel
|
| 8 |
The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation
|
Sogoyan, A. V.
|
|
2014
|
43 |
2 |
p. 162-164
|
artikel
|
| 9 |
Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model
|
Elesin, V. V.
|
|
2014
|
43 |
2 |
p. 139-147
|
artikel
|
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