| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Activated-process parameters for diamond, silicon, and germanium crystals
|
Magomedov, M. N.
|
|
2011
|
40 |
8 |
p. 567-573
|
article
|
| 2 |
Approaches to hydrogenation of silicon tetrachloride in polysilicon manufacture
|
Ivanov, V. M.
|
|
2011
|
40 |
8 |
p. 559-561
|
article
|
| 3 |
Atomic structure and methods for structural investigations how ingot growth conditions of Bi2Te2.7Se0.3 solid solutions influence the physical properties of anisotropy
|
Bublik, V. T.
|
|
2011
|
40 |
8 |
p. 634-640
|
article
|
| 4 |
Conditions for the formation of defectless quantum dots in the theoretical estimation of InxGa1 − xAs/GaAs heterostructures
|
Akchurin, R. Kh.
|
|
2011
|
40 |
8 |
p. 587-590
|
article
|
| 5 |
Effect of the microstructure on the properties of radio-absorbing nickel-zinc ferrites
|
Kostishin, V. G.
|
|
2011
|
40 |
8 |
p. 574-577
|
article
|
| 6 |
Electric properties of (SiC)1 − x(AlN)x/SiC anisotropic heterostructures
|
Bilalov, B. A.
|
|
2011
|
40 |
8 |
p. 612-615
|
article
|
| 7 |
How the edge permeability of a 2D island influences the transition from 2D to 3D growth
|
Filimonov, S. N.
|
|
2011
|
40 |
8 |
p. 602-609
|
article
|
| 8 |
How the modes of operation of light-emitting diodes influence the process of the formation of defects in the area of a p-n junction and the quantum yield drop
|
Manyakhin, F. I.
|
|
2011
|
40 |
8 |
p. 624-628
|
article
|
| 9 |
Hydrogen sorption by carbon nanomaterials
|
Timonina, A. V.
|
|
2011
|
40 |
8 |
p. 595-601
|
article
|
| 10 |
Internal-getter formation in nitrogen-doped dislocation-free silicon wafers
|
Mezhennyi, M. V.
|
|
2011
|
40 |
8 |
p. 553-558
|
article
|
| 11 |
Modeling and simulating the nucleation of amorphous or crystalline films of diamond-like materials
|
Sinel’nikov, B. M.
|
|
2011
|
40 |
8 |
p. 578-586
|
article
|
| 12 |
On the essence of the high photosensitivity of a-Si:H layered films
|
Kurova, I. A.
|
|
2011
|
40 |
8 |
p. 616-619
|
article
|
| 13 |
Optical transmission spectra and electrical properties of langasite and langatate crystals as dependent on growth conditions
|
Buzanov, O. A.
|
|
2011
|
40 |
8 |
p. 562-566
|
article
|
| 14 |
Pb1 − xSnxTe epitaxial films for terahertz detectors
|
Belogorokhov, A. I.
|
|
2011
|
40 |
8 |
p. 610-611
|
article
|
| 15 |
Spectral and photoelectric parameters of high-voltage multi-junction solar batteries
|
Korol’chenko, A. S.
|
|
2011
|
40 |
8 |
p. 620-623
|
article
|
| 16 |
Structural and electric properties of AlN substrates used for LED Heterostructures’ growth
|
Polyakov, A. Ya.
|
|
2011
|
40 |
8 |
p. 629-633
|
article
|
| 17 |
Surface structure of nanocomposites based on silicon-carbon matrix revealed by scanning probe microscopy
|
Malinkovich, M. D.
|
|
2011
|
40 |
8 |
p. 591-594
|
article
|
| 18 |
The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon
|
Enisherlova, K. L.
|
|
2011
|
40 |
8 |
p. 641-648
|
article
|
| 19 |
Wide-bandgap compound semiconductors for X- or gamma-ray detectors
|
Zaletin, V. M.
|
|
2011
|
40 |
8 |
p. 543-552
|
article
|
Journal description